SOI TECHNOLOGIES : THEIR PAST, PRESENT AND FUTURE p. C4-3 J. HAISMA DOI: https://doi.org/10.1051/jphyscol:1988401 RésuméPDF (396.7 KB)
CMOS-TECHNOLOGY - STATUS, TRENDS AND APPLICATIONS p. C4-13 F. NEPPL et H.-J. PFLEIDERER DOI: https://doi.org/10.1051/jphyscol:1988402 RésuméPDF (4.451 MB)
A HIGH PERFORMANCE LIQUID-NITROGEN CMOS SRAM TECHNOLOGY p. C4-25 J.Y.-C. SUN, S. KLEPNER, Y. TAUR, H. HANAFI, P. RESTLE, T. BUCELOT, K. PETRILLO, R. DENNARD, S. SCHUSTER, T. CHAPPELL et al. (2 de plus) DOI: https://doi.org/10.1051/jphyscol:1988403 RésuméPDF (1.398 MB)
CHARACTERISATION OF NARROW-SPACED ISOLATION IN A TWIN RETROGRADE WELL SUBMICRON CMOS PROCESS p. C4-29 P.A. van der PLAS, P.H.J. SPIJKERS et F.M. KLAASSEN DOI: https://doi.org/10.1051/jphyscol:1988404 RésuméPDF (764.9 KB)
DEVICE CHARACTERISATION OF A HIGH DENSITY HALF-MICRON CMOS PROCESS p. C4-33 P.H. WOERLEE, C.A.H. JUFFERMANS, H. LIFKA, A.J. WALKER, T. POORTER, H.J.H. MERKS-EPPINGBROEK et F.M. OUDE LANSINK DOI: https://doi.org/10.1051/jphyscol:1988405 RésuméPDF (1.646 MB)
GENERATION LIFETIME AND HOLD TIME OF SMALL MOS DEVICES p. C4-37 N.O. PEARCE, A.R. PEAKER et B. HAMILTON DOI: https://doi.org/10.1051/jphyscol:1988406 RésuméPDF (486.0 KB)
CMOS TECHNOLOGY FOR CCD VIDEO MEMORIES p. C4-41 G.J.T. DAVIDS, P.B. HARTOG, J.W. SLOTBOOM, G. STREUTKER, A.G. van der SIJDE et W. WIERTSEMA DOI: https://doi.org/10.1051/jphyscol:1988407 RésuméPDF (1.067 MB)
EFFECTS OF MECHANICAL STRESS ON MOS STRUCTURES WITH TiSi2 GATES p. C4-45 P.J. REUTERS, J. GIESE, M. OFFENBERG, W. RICHTER, S. EWERT et P. BALK DOI: https://doi.org/10.1051/jphyscol:1988408 RésuméPDF (1.083 MB)
LATCH-UP FREE VLSI CMOS CIRCUITS CONSIDERING POWER-ON TRANSIENTS p. C4-49 W. RECZEK, J. WINNERL et W. PRIBYL DOI: https://doi.org/10.1051/jphyscol:1988409 RésuméPDF (1.975 MB)
NON-DESTRUCTIVE CHARACTERISATION OF DEVICE PROCESSING OF SILICON-ON-SAPPHIRE (SOS) WAFERS p. C4-55 C. PICKERING, S. SHARMA, S. COLLINS, A.G. MORPETH, G.R. TERRY et A.M. HODGE DOI: https://doi.org/10.1051/jphyscol:1988410 RésuméPDF (930.2 KB)
OSIRIS II, A TWO-DIMENSIONAL PROCESS SIMULATOR FOR SIMOX STRUCTURES p. C4-59 I. SWEID, N. GUILLEMOT et G. KAMARINOS DOI: https://doi.org/10.1051/jphyscol:1988411 RésuméPDF (405.7 KB)
ELECTRONIC PROPERTIES OF SILICON INTERFACES PREPARED BY DIRECT BONDING p. C4-63 S. BENGTSSON et O. ENGSTRÖM DOI: https://doi.org/10.1051/jphyscol:1988412 RésuméPDF (1.521 MB)
THEORETICAL ANALYSIS OF THE TWO-TERMINAL MOS CAPACITOR ON SOI SUBSTRATE p. C4-67 P. PAELINCK, D. FLANDRE, A. TERAO et F. VAN de WIELE DOI: https://doi.org/10.1051/jphyscol:1988413 RésuméPDF (960.5 KB)
SILICON SELECTIVE AND LATERAL OVERGROWTH EPITAXY : GROWTH AND ELECTRICAL EVALUATION FOR DEVICES p. C4-71 J. FRIEDRICH, G.W. NEUDECK et S.T. LIU DOI: https://doi.org/10.1051/jphyscol:1988414 RésuméPDF (807.3 KB)
HIGHER EFFICIENCY OF CMOS-PROCESS-COMPATIBLE PHOTODIODES IN SOI-TECHNIQUE BY REFLECTING FILMS p. C4-75 K. KNOSPE et K. GOSER DOI: https://doi.org/10.1051/jphyscol:1988415 RésuméPDF (1.277 MB)
COOL PLASMA ACTIVATED SURFACE IN SILICON WAFER DIRECT BONDING TECHNOLOGY p. C4-79 G.-L. SUN, J. ZHAN, Q.-Y. TONG, S.-J. XIE, Y.-M. CAI et S.-J. LU DOI: https://doi.org/10.1051/jphyscol:1988416 RésuméPDF (551.7 KB)
CIT 1 AND CIT 2, ADVANCED NON EPITAXIAL BIPOLAR/CMOS PROCESSES FOR ANALOG-DIGITAL VLSI p. C4-85 C. VOLZ et L. BLOSSFELD DOI: https://doi.org/10.1051/jphyscol:1988417 RésuméPDF (510.4 KB)
HIGH-SPEED OPTICAL DETECTION UP TO 2.5Gbit/s WITH A DOUBLE POLYSILICON SELF-ALIGNED SILICON BIPOLAR TRANSISTOR p. C4-89 W. BOCK, L. TREITINGER et W. PRETTL DOI: https://doi.org/10.1051/jphyscol:1988418 RésuméPDF (1.414 MB)
AN IMPROVED FULLY CMOS COMPATIBLE BIPOLAR STRUCTURE p. C4-93 A. GÉRODOLLE, G. GIROULT, S. MARTIN et A. NOUAILHAT DOI: https://doi.org/10.1051/jphyscol:1988419 RésuméPDF (701.2 KB)
WELL - OPTIMIZATION FOR HIGH SPEED BICMOS TECHNOLOGIES p. C4-97 H. KLOSE, T. MEISTER, B. HOFFMANN, J. WENG et B. PFÄFFEL DOI: https://doi.org/10.1051/jphyscol:1988420 RésuméPDF (900.0 KB)
AN ULTRA HIGH SPEED TRENCH ISOLATED DOUBLE POLYSILICON BIPOLAR PROCESS p. C4-101 M.C. WILSON, S. DUNCAN et P.C. HUNT DOI: https://doi.org/10.1051/jphyscol:1988421 RésuméPDF (939.8 KB)
A TRENCH ISOLATED HIGH SPEED BIPOLAR PROCESS FOR A 10K GATE, 950MHz, VLSI CIRCUIT p. C4-105 C. MALLARDEAU, M. ROCHE, M. DEPEY, F. DELL'OVA, D. THOMAS, D. CELI, P. HUNT et A. HEFNER DOI: https://doi.org/10.1051/jphyscol:1988422 RésuméPDF (2.454 MB)
SHALLOW DOPING PROFILES FOR HIGH-SPEED BIPOLAR TRANSISTORS p. C4-109 K. EHINGER, H. KABZA, J. WENG, M. MIURA-MATTAUSCH, I. MAIER, H. SCHABER et J. BIEGER DOI: https://doi.org/10.1051/jphyscol:1988423 RésuméPDF (1.718 MB)
TRENDS IN INDIUM PHOSPHIDE MICROELECTRONICS p. C4-115 A. SCAVENNEC DOI: https://doi.org/10.1051/jphyscol:1988424 RésuméPDF (850.7 KB)
HETEROSTRUCTURE FIELD EFFECT TRANSISTOR, PHYSICAL ANALYSIS AND NEW STRUCTURES p. C4-125 G. SALMER DOI: https://doi.org/10.1051/jphyscol:1988425 RésuméPDF (3.666 MB)
CHARGE PUMPING IN SILICON ON INSULATOR STRUCTURES USING GATED P-I-N DIODES p. C4-137 T. ELEWA, H. HADDARA, S. CRISTOLOVEANU et M. BRUEL DOI: https://doi.org/10.1051/jphyscol:1988426 RésuméPDF (1.600 MB)
A CONTACTLESS TECHNIQUE FOR THE CHARACTERIZATION OF INTERNALLY GETTERED CZ SILICON p. C4-141 M.A. BRIERE DOI: https://doi.org/10.1051/jphyscol:1988427 RésuméPDF (1.130 MB)
A MICROWAVE METHOD FOR CONTACTLESS MEASUREMENT OF THE LIFETIME OF FREE CARRIERS IN SILICON WAFERS p. C4-145 T. OTAREDIAN, S. MIDDELHOEK et M.J.J. THEUNISSEN DOI: https://doi.org/10.1051/jphyscol:1988428 RésuméPDF (1023 KB)
NUMERICAL SIMULATIONS TO IMPROVE THE ACCURACY OF ELECTRON-BEAM TESTING ON PASSIVATED INTEGRATED CIRCUITS p. C4-149 H. FREMONT, A. TOUBOUL, D. GOBLED et Y. DANTO DOI: https://doi.org/10.1051/jphyscol:1988429 RésuméPDF (957.2 KB)
ACCELERATION 1/F NOISE IN SILICON MOSFETs p. C4-153 A.N. BIRBAS, Q. PENG, A. VAN DER ZIEL et A.D. VAN RHEENEN DOI: https://doi.org/10.1051/jphyscol:1988430 RésuméPDF (331.8 KB)
SPATIAL DISTRIBUTION OF 1/f NOISE SOURCE p. C4-157 L.K.J VANDAMME DOI: https://doi.org/10.1051/jphyscol:1988431 RésuméPDF (1.194 MB)
ON THE ORIGIN OF 1/F NOISE IN MOS TRANSISTORS p. C4-161 E.J.P. MAY DOI: https://doi.org/10.1051/jphyscol:1988432 RésuméPDF (79.83 KB)
NOISE AND DIFFUSION IN p-TYPE SILICON p. C4-165 J.P. NOUGIER, A. MOATADID et J.C. VAISSIERE DOI: https://doi.org/10.1051/jphyscol:1988433 RésuméPDF (386.4 KB)
PROPERTIES OF WSi2 : OHMIC CONTACT TO N+ AND P+ Si, BARRIER BETWEEN Al AND Si, AND FEASIBILITY AS FIRST METAL IN MULTILEVEL METALLIZATION PROCESSES p. C4-171 S.-L. ZHANG, M. HAMMAR, T. JOHANSSON et R. BUCHTA DOI: https://doi.org/10.1051/jphyscol:1988434 RésuméPDF (1.088 MB)
EFFECTS OF COMPOUND FORMATION WITH DOPANTS IN TaSi2 p. C4-175 V. PROBST, H. KABZA et H. GOEBEL DOI: https://doi.org/10.1051/jphyscol:1988435 RésuméPDF (584.6 KB)
NONSELECTIVE W/WSix -CVD TECHNOLOGY FOR LOW RESISTANCE VIA PLUGS ON ALUMINUM p. C4-179 E. BERTAGNOLLI, C. WIECZOREK, B. HOFFMANN et H. SCHABER DOI: https://doi.org/10.1051/jphyscol:1988436 RésuméPDF (1.454 MB)
CONTROL OF A SELF-ALIGNED W SILICIDE PROCESS BY ANNEALING AMBIENCE p. C4-183 J. TORRES, J. PALLEAU, N. BOURHILA, J.C. OBERLIN, A. DENEUVILLE et M. BENYAHIA DOI: https://doi.org/10.1051/jphyscol:1988437 RésuméPDF (689.7 KB)
MODELLING DIFFUSION IN SILICIDES p. C4-187 P.B. MOYNAGH, A.A. BROWN et P.J. ROSSER DOI: https://doi.org/10.1051/jphyscol:1988438 RésuméPDF (810.1 KB)
DEGRADATION OF THE POLY-Si/SILICIDE STRUCTURE IN ADVANCED MOS-TECHNOLOGIES p. C4-191 P. LIPPENS, K. MAEX, L. VAN den HOVE, R. DE KEERSMAECKER, V. PROBST, W. KOPPENOL et W. van der WEG DOI: https://doi.org/10.1051/jphyscol:1988439 RésuméPDF (1.236 MB)
A FULLY CHARACTERISED PROCESS FOR TITANIUM SILICIDE BY RTA FOR ONE MICRON CMOS p. C4-195 N.F. STOGDALE DOI: https://doi.org/10.1051/jphyscol:1988440 RésuméPDF (670.3 KB)
OUTPUT IMPEDANCE FREQUENCY DISPERSION AND LOW FREQUENCY NOISE IN GaAs MESFETs p. C4-201 D. GITLIN, C.R. VISWANATHAN et A.A. ABIDI DOI: https://doi.org/10.1051/jphyscol:1988441 RésuméPDF (711.1 KB)
InGaAs SINGLE- AND DUAL-GATE HIGH-SPEED FETs : PREPARATION AND PERFORMANCE p. C4-205 K. STEINER, K. NTIKBASANIS, U. SEILER, K. HEIME et E. KUPHAL DOI: https://doi.org/10.1051/jphyscol:1988442 RésuméPDF (619.9 KB)
DEPLETION AND ENHANCEMENT MODE Si3N4/GaInAs MISFETs WITH NO CURRENT DRIFT p. C4-209 M. RENAUD, P. BOHER, J. SCHNEIDER, J. BARRIER, D. SCHMITZ, M. HEYEN et H. JÜRGENSEN DOI: https://doi.org/10.1051/jphyscol:1988443 RésuméPDF (1.289 MB)
IN SITU PROCESSING OF InP BY FLASH LPCVD FOR SURFACE PREPARATION AND GATE OXIDE DEPOSITION p. C4-213 Y.I. NISSIM, C. LICOPPE, J.M. MOISON et C. MERIADEC DOI: https://doi.org/10.1051/jphyscol:1988444 RésuméPDF (147.2 KB)
HIGH PERFORMANCE SCHOTTKY DIODE AND FET ON InP p. C4-217 S. LOUALICHE, A. GINOUDI, H. L'HARIDON, M. SALVI, A. LE CORRE, D. LECROSNIER et P.N. FAVENNEC DOI: https://doi.org/10.1051/jphyscol:1988445 RésuméPDF (196.8 KB)
ION IMPLANTED InP MISFET's WITH LOW DRAIN CURRENT DRIFT p. C4-223 G. POST, P. DIMITRIOU, A. FALCOU, N. DUHAMEL et G. MERMANT DOI: https://doi.org/10.1051/jphyscol:1988446 RésuméPDF (913.8 KB)
INTERFACE STATES PARAMETERS DEDUCED FROM DLTS, ICTS AND CONDUCTANCE METHODS ON TiAu/Si3N4/GaInAs MIS STRUCTURES p. C4-227 J. BARRIER, M. RENAUD, P. BOHER et J. SCHNEIDER DOI: https://doi.org/10.1051/jphyscol:1988447 RésuméPDF (1.044 MB)
MEGAPIXEL IMAGE SENSORS TECHNOLOGY p. C4-233 R.P. KHOSLA DOI: https://doi.org/10.1051/jphyscol:1988448 RésuméPDF (340.8 KB)
TIME DEPENDENT BEHAVIOUR OF FIELD LIMITING RING PASSIVATION SYSTEMS p. C4-241 M.K. JOHNSON, D.J. COE, A.D. ANNIS et J.N. SANDOE DOI: https://doi.org/10.1051/jphyscol:1988449 RésuméPDF (750.5 KB)
3D MOSFET DEVICE EFFECTS DUE TO FIELD OXIDE p. C4-245 M. THURNER et S. SELBERHERR DOI: https://doi.org/10.1051/jphyscol:1988450 RésuméPDF (469.9 KB)
NOVEL CALCULATIONS IN THE FIELD OF ACCURATE ANALYTICAL MOS TRANSISTOR MODELLING p. C4-249 L. LAUWERS et K. DE MEYER DOI: https://doi.org/10.1051/jphyscol:1988451 RésuméPDF (557.4 KB)
A NEW ANALYTICAL AND STATISTICAL-ORIENTED APPROACH FOR THE TWO-DIMENSIONAL ANALYSIS OF SHORT-CHANNEL MOSFET's p. C4-253 M. CONTI, C. TURCHETTI et G. MASETTI DOI: https://doi.org/10.1051/jphyscol:1988452 RésuméPDF (838.6 KB)
THE SERIES RESISTANCE OF SUBMICRON MOSFETs AND ITS EFFECT ON THEIR CHARACTERISTICS p. C4-257 F.M. KLAASSEN, P.T.J. BIERMANS et R.M.D. VELGHE DOI: https://doi.org/10.1051/jphyscol:1988453 RésuméPDF (507.2 KB)
ANALYTICAL ANALYSIS OF PUNCHTHROUGH IN BURRIED CHANNEL P-MOSFETs p. C4-261 T. SKOTNICKI, G. MERCKEL et T. PEDRON DOI: https://doi.org/10.1051/jphyscol:1988454 RésuméPDF (204.3 KB)
A MOBILITY MODEL FOR MOSFET DEVICE DIMULATION p. C4-265 A.J. WALKER et P.H. WOERLEE DOI: https://doi.org/10.1051/jphyscol:1988455 RésuméPDF (174.2 KB)
"WCAP" : WORST CASE ANALYSIS PROGRAM : A TOOL FOR STATISTICAL CIRCUIT SIMULATION p. C4-269 N. BALLAY et B. BAYLAC DOI: https://doi.org/10.1051/jphyscol:1988456 RésuméPDF (147.4 KB)
BAND-TAIL SHOCKLEY-READ-HALL RECOMBINATION IN HEAVILY DOPED SILICON p. C4-275 M.Y. GHANNAM, R.P. MERTENS, S.C. JAIN, J.F. NIJS et R. VAN OVERSTRAETEN DOI: https://doi.org/10.1051/jphyscol:1988457 RésuméPDF (1.358 MB)
GATE OXIDE QUALITY OF DRAM TRENCH CAPACITORS p. C4-283 S. RÖHL, M. ENGELHARDT, W.-U. KELLNER et A. SCHLEMM DOI: https://doi.org/10.1051/jphyscol:1988458 RésuméPDF (1.897 MB)
IMPROVING RELIABILITY USING DESIGN CENTERING p. C4-287 W. HEIMSCH, R. KREBS, K. ZIEMANN et D. MOEBUS DOI: https://doi.org/10.1051/jphyscol:1988459 RésuméPDF (459.7 KB)
ELECTRON BEAM DIRECT WRITE EFFECTS ON CMOS DEVICES p. C4-291 K. BARLOW DOI: https://doi.org/10.1051/jphyscol:1988460 RésuméPDF (358.8 KB)
EFFECTS OF GAMMA RADIATION ON TRENCH ISOLATED CMOS p. C4-295 P.L. MEDHURST et D.J. FOSTER DOI: https://doi.org/10.1051/jphyscol:1988461 RésuméPDF (608.8 KB)
THE INFLUENCE OF X-RAY DAMAGE ON ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS CAPACITORS p. C4-299 U. SCHWALKE, E.P. JACOBS et B. BREITHAUPT DOI: https://doi.org/10.1051/jphyscol:1988462 RésuméPDF (1.607 MB)
MOS-DEGRADATION IN INPUT AND OUTPUT STAGES OF VLSI-CMOS-CIRCUITS DUE TO ELECTROSTATIC DISCHARGE p. C4-303 X. GUGGENMOS DOI: https://doi.org/10.1051/jphyscol:1988463 RésuméPDF (1.215 MB)
MASSIVE HILLOCK GROWTH ON CATHODE SIDE OF TEST STRUCTURE DURING ELECTROMIGRATION EXPERIMENTS p. C4-307 B. BACCONNIER, G. LORMAND et F. MARTIN DOI: https://doi.org/10.1051/jphyscol:1988464 RésuméPDF (639.3 KB)
CHARACTERIZATION OF FIELD-OXIDE-TRANSISTOR-INSTABILITIES CAUSED BY SOG-PLANARIZATION p. C4-311 B. VOLLMER, G. RÖSKA et J. WINNERL DOI: https://doi.org/10.1051/jphyscol:1988465 RésuméPDF (1.417 MB)
STATISTICAL ANALYSIS OF IMPLANT ANGLES EFFECTS ON ASYMMETRICAL NMOSFETs CHARACTERISTICS AND RELIABILITY p. C4-315 P. DARS, T. TERNISIEN d'OUVILLE, H. MINGAM et G. MERCKEL DOI: https://doi.org/10.1051/jphyscol:1988466 RésuméPDF (879.2 KB)
PHOTODIODE FOR COHERENT DETECTION : MODELING AND EXPERIMENTAL RESULTS p. C4-321 J.E. VIALLET, S. MOTTET, L. LE HUEROU et C. BOISROBERT DOI: https://doi.org/10.1051/jphyscol:1988467 RésuméPDF (889.1 KB)
CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR p. C4-325 M. ZIRNGIBL, R. SACHOT et M. ILEGEMS DOI: https://doi.org/10.1051/jphyscol:1988468 RésuméPDF (903.7 KB)
HIGH SPEED InAlAs/InGaAs DOUBLE HETEROSTRUCTURE p-i-n's p. C4-329 J.-C. BISCHOFF, T.H. HOLLENBECK, R.N. NOTTENBURG, M.C. TAMARGO, J.L. DE MIGUEL, C.F. MOORE et H. SCHUMACHER DOI: https://doi.org/10.1051/jphyscol:1988469 RésuméPDF (546.3 KB)
GaSb AND GaInAsSb PHOTODETECTORS FOR λ > 1.55 µm PREPARED BY METAL ORGANIC CHEMICAL VAPOR DEPOSITION p. C4-333 G. BOUGNOT, F. PASCAL, F. ROUMANILLE, J. BOUGNOT, L. GOUSKOV, F. DELANNOY, P. GROSSE et H. LUQUET DOI: https://doi.org/10.1051/jphyscol:1988470 RésuméPDF (464.4 KB)
1.5µm PHASE SHIFTED DISTRIBUTED FEEDBACK LASER p. C4-337 M. GILLERON, J. CHARIL, D. LESTERLIN, P. CORREC et J.C. BOULEY DOI: https://doi.org/10.1051/jphyscol:1988471 RésuméPDF (986.8 KB)
FABRICATION AND LASING PROPERTIES OF A NOVEL SINGLE LONGITUDINAL MODE 1.5 µm GaInAsP/InP DISTRIBUTED REFLECTOR (DR) LASER p. C4-341 K. KOMORI, H. SUZUKI, K.S. LEE, S. ARAI, Y. SUEMATSU, M. AOKI et S. PELLEGRINO DOI: https://doi.org/10.1051/jphyscol:1988472 RésuméPDF (709.6 KB)
SILICON MOLECULAR BEAM EPITAXY : STATUS ; DEVICES ; TRENDS p. C4-347 E. KASPER DOI: https://doi.org/10.1051/jphyscol:1988473 RésuméPDF (4.061 MB)
MEASUREMENT OF MINORITY-CARRIER LIFETIME AND INTERFACE RECOMBINATION VELOCITIES IN P-I-N DIODES, FROM HIGH FREQUENCY RESPONSE OF A BIPOLAR JFET STRUCTURE p. C4-359 G. VITALE et P. SPIRITO DOI: https://doi.org/10.1051/jphyscol:1988474 RésuméPDF (937.2 KB)
JFET FOR COMPLETELY DEPLETED HIGH RESISTIVITY SILICON p. C4-363 V. RADEKA, P. REHAK, S. RESCIA, E. GATTI, A. LONGONI, M. SAMPIETRO, G. BERTUCCIO, P. HOLL, L. STRUDER et J. KEMMER DOI: https://doi.org/10.1051/jphyscol:1988475 RésuméPDF (1.242 MB)
SELECTIVE EPITAXY BASE FOR BIPOLAR TRANSISTORS p. C4-367 J.N. BURGHARTZ, B.J. GINSBERG, S.R. MADER, T.-C. CHEN et D.L. HARAME DOI: https://doi.org/10.1051/jphyscol:1988476 RésuméPDF (834.8 KB)
UNIFIED MODEL FOR BIPOLAR TRANSISTORS INCLUDING THE VOLTAGE AND CURRENT DEPENDENCE OF THE BASE AND COLLECTOR RESISTANCES AS WELL AS THE BREAKDOWN LIMITS p. C4-371 F. HÉBERT et D. J. ROULSTON DOI: https://doi.org/10.1051/jphyscol:1988477 RésuméPDF (1009 KB)
PEDESTAL BIPOLAR TRANSISTOR WITH POLYSILICON ACTIVE BASE AND EMITTER WHICH ACHIEVES MINIMIZED CAPACITANCES p. C4-375 F. HÉBERT et D.J. ROULSTON DOI: https://doi.org/10.1051/jphyscol:1988478 RésuméPDF (1.168 MB)
HIGH FREQUENCY BASE RESISTANCE AND THE REPRESENTATION OF TWO AND THREE-DIMENSIONAL AC AND DC EMITTER AND BASE CURRENT FLOW OF BIPOLAR TRANSISTORS p. C4-379 F. HÉBERT et D.J. ROULSTON DOI: https://doi.org/10.1051/jphyscol:1988479 RésuméPDF (575.6 KB)
ELECTRICAL BEHAVIOUR AND MODELLING OF A N-DOPED a-Si : H EMITTER BIPOLAR TRANSISTOR p. C4-383 O. BONNAUD, A. EL GHARIB et M. SAHNOUNE DOI: https://doi.org/10.1051/jphyscol:1988480 RésuméPDF (1.698 MB)
MAXIMUM OPERATING VOLTAGE LIMITATIONS DUE TO PARASITIC BIPOLAR ACTION IN VLSI CMOS p. C4-387 D. TAKACS et M. STEGER DOI: https://doi.org/10.1051/jphyscol:1988481 RésuméPDF (1.784 MB)
PLASMA ANODISATION OF SILICON FOR ADVANCED VLSI p. C4-393 S. TAYLOR, W. ECCLESTON, J. RINGNALDA, D.M. MAHER, D.J. EAGLESHAM, C.J. HUMPHREYS et D.J. GODFREY DOI: https://doi.org/10.1051/jphyscol:1988482 RésuméPDF (1.841 MB)
CHARACTERIZATION OF SiO2 FILMS DEPOSITED BY PYROLYSIS OF TETRAETHYLORTHOSILICATE (TEOS) p. C4-397 W.S. WU, S. ROJAS, S. MANZINI, A. MODELLI et D. RE DOI: https://doi.org/10.1051/jphyscol:1988483 RésuméPDF (1.989 MB)
RAPID THERMAL PROCESSING OF ARSENIC-IMPLANTED POLYSILICON ON VERY THIN OXIDE p. C4-401 J.Y.-C. SUN, R. ANGELUCCI, C.Y WONG, G. SCILLA et E. LANDI DOI: https://doi.org/10.1051/jphyscol:1988484 RésuméPDF (643.3 KB)
INFLUENCE OF THE FABRICATION CONDITIONS ON THE p+-TaSi2/POLY-Si GATE QUALITY p. C4-405 C. MAZURE, U. SCHWALKE, F. NEPPL, P. EICHINGER et M. METZGER DOI: https://doi.org/10.1051/jphyscol:1988485 RésuméPDF (1.293 MB)
EFFECT OF DEPOSITION TEMPERATURE ON PLASMA GROWN ALUMINUM OXIDE FILMS p. C4-409 C. BOURREAU et Y. CATHERINE DOI: https://doi.org/10.1051/jphyscol:1988486 RésuméPDF (832.3 KB)
SUPERFICIAL-ENHANCED THERMAL NITRIDATION OF SiO2 THIN FILMS p. C4-413 A. GLACHANT, B. BALLAND, A. RONDA, J.C. BUREAU et C. PLOSSU DOI: https://doi.org/10.1051/jphyscol:1988487 RésuméPDF (1.579 MB)
PROCESS DEPENDENCE OF HOLE TRAPPING IN NITRIDED SiO2 FILMS p. C4-417 M. SEVERI, M. IMPRONTA, L. DORI et S. GUERRI DOI: https://doi.org/10.1051/jphyscol:1988488 RésuméPDF (1.363 MB)
CMOS TECHNOLOGY USING PLASMA NITRIDED OXIDE AS A GATE DIELECTRIC p. C4-421 A. STRABONI, M. BERENGUER, B. VUILLERMOZ, P. DEBENEST, A. VERNA et P. DARS DOI: https://doi.org/10.1051/jphyscol:1988489 RésuméPDF (810.4 KB)
DIFFUSION BARRIER LAYERS FOR OHMIC CONTACTS TO GaAs p. C4-427 D.A. ALLAN, J. HERNIMAN, M.J. GILBERT, P.J. O'SULLIVAN, M.P. GRIMSHAW et A.E. STATION-BEVAN DOI: https://doi.org/10.1051/jphyscol:1988490 RésuméPDF (544.0 KB)
CONTROL OF THE FABRICATION STEPS OF InP MIS TRANSISTORS BY MEANS OF SCANNING PHOTOLUMINESCENCE MEASUREMENTS p. C4-431 B. COMMERE, M. GARRIGUES, S.K. KRAWCZYK, C. LALLEMAND, K. SCHOHE et B. CANUT DOI: https://doi.org/10.1051/jphyscol:1988491 RésuméPDF (2.679 MB)
Mg+/O+ ION IMPLANTATION IN GaAs/GaAlAs HETEROSTRUCTURES p. C4-437 B. DESCOUTS, N. DUHAMEL et Y. GAO DOI: https://doi.org/10.1051/jphyscol:1988492 RésuméPDF (1.889 MB)
NON-ALLOYED Ge/Pd OHMIC CONTACT FOR GaAs MESFET'S p. C4-441 A. PACCAGNELLA, C. CANALI, G. DONZELLI, E. ZANONI, R. ZANETTI et S.S. LAU DOI: https://doi.org/10.1051/jphyscol:1988493 RésuméPDF (629.5 KB)
RAPID THERMAL ANNEALING OF TiW SCHOTTKY CONTACTS ON GaAs p. C4-445 M. VAN HOVE, M. de POTTER, W. DE RAEDT, G. ZOU et M. VAN ROSSUM DOI: https://doi.org/10.1051/jphyscol:1988494 RésuméPDF (776.8 KB)
0.9 eV POTENTIAL BARRIER SCHOTTKY DIODE ON 0.75-0.5 eV GAP GaxIn1-xAS\a-Si:H\Pt p. C4-449 A. DENEUVILLE, F. VALENTIN et S. BELKOUCH DOI: https://doi.org/10.1051/jphyscol:1988495 RésuméPDF (683.3 KB)
VERY LOW RESISTIVITY AuMn GATE OHMIC CONTACTS FOR GaInAs DIFFUSED JFETs p. C4-453 P.E. HALLALI, P. BLANCONNIER, L. BRICARD et J-C. RENAUD DOI: https://doi.org/10.1051/jphyscol:1988496 RésuméPDF (966.5 KB)
DEFECT CHARACTERIZATION OF Si+-IMPLANTED GaAs BY MONOENERGETIC POSITRON BEAM TECHNIQUE p. C4-457 J.-L. LEE, K.-H. SHIM, S. TANIGAWA, A. UEDONO, J.S. KIM, H.M. PARK et D.S. MA DOI: https://doi.org/10.1051/jphyscol:1988497 RésuméPDF (1.199 MB)
LASER SCANNING TOMOGRAPHY : A NON DESTRUCTIVE QUALIFICATION TEST FOR SEMICONDUCTORS p. C4-463 J.P. FILLARD DOI: https://doi.org/10.1051/jphyscol:1988498 RésuméPDF (1.410 MB)
FUTURE BIPOLAR DEVICE STRUCTURES p. C4-471 H. GOTO DOI: https://doi.org/10.1051/jphyscol:1988499 RésuméPDF (1.460 MB)
III-V COMPOUND DEVICES ON SILICON : SITUATION AND PERSPECTIVES p. C4-481 J. P. HIRTZ et M. N. CHARASSE DOI: https://doi.org/10.1051/jphyscol:19884100 RésuméPDF (1.396 MB)
TiW AND Al CONTACTS TO SHALLOW p+ JUNCTIONS - A COMPARISON BETWEEN FURNACE AND RAPID THERMAL ANNEALING (RTA) p. C4-489 P. WIKLUND, U. WENNSTRÖM, H. NORSTRÖM, I. SUNI et A. LINDBERG DOI: https://doi.org/10.1051/jphyscol:19884101 RésuméPDF (758.8 KB)
RELIABILITY ASPECTS OF VLSI METALLISATION WITH DIFFUSION BARRIERS p. C4-495 G. RÖSKA et F. NEPPL DOI: https://doi.org/10.1051/jphyscol:19884102 RésuméPDF (1.715 MB)
CONDUCTING DIFFUSION BARRIER : FORMATION AND CHARACTERISATION OF WN OBTAINED BY THERMAL ANNEALING UNDER NH3 OF W FILMS DEPOSITED ON Si p. C4-499 A. DENEUVILLE, M. BENYAHYA, M. BRUNEL et B. CANUT DOI: https://doi.org/10.1051/jphyscol:19884103 RésuméPDF (1.136 MB)
A SELF ALIGNED CONTACT PROCESS WITH IMPROVED SURFACE PLANARIZATION p. C4-503 K.H. KÜSTERS, W. SESSELMANN, H. MELZNER et B. FRIESEL DOI: https://doi.org/10.1051/jphyscol:19884104 RésuméPDF (1.794 MB)
FORMATION OF SHALLOW P+ JUNCTIONS BY IMPLANTATION INTO SILICIDE p. C4-507 K.J. BARLOW DOI: https://doi.org/10.1051/jphyscol:19884105 RésuméPDF (594.6 KB)
SHADOWING EFFECT IN SELF-ALIGNED CONTACTS p. C4-511 E. CAMERLENGHI, E. SERVIDA et M. TOSI DOI: https://doi.org/10.1051/jphyscol:19884106 RésuméPDF (814.2 KB)
2D BORON DISTRIBUTIONS AFTER ION IMPLANT AND TRANSIENT ANNEAL p. C4-515 P.J. PEARSON et C. HILL DOI: https://doi.org/10.1051/jphyscol:19884107 RésuméPDF (764.1 KB)
MIGRATION OF FLUORINE ATOMS AND INFLUENCE ON SHALLOW P+N JUNCTION IN B+2 IMPLANTED SILICON UNDER RTA p. C4-519 T.-Q. ZHANG, J.-L. LIU et X.-Y. YANG DOI: https://doi.org/10.1051/jphyscol:19884108 RésuméPDF (621.4 KB)
SCALLING OF TRENCH CAPACITOR CELL FOR NEXT GENERATION DRAMs p. C4-525 H.-M. MÜHLHOFF, C.M. ROGERS, P. MURKIN, M. ELAHY et S. RÖHL DOI: https://doi.org/10.1051/jphyscol:19884109 RésuméPDF (772.1 KB)
CMOS 1 MICRON ISOLATION TECHNOLOGY USING INTERFACE SEALING BY PLASMA NITRIDATION : PLASMA SILO p. C4-529 P. DELPECH, B. VUILLERMOZ, M. BERENGUER, A. STRABONI et T. TERNISIEN DOI: https://doi.org/10.1051/jphyscol:19884110 RésuméPDF (1.020 MB)
A SUB-MICRON CMOS PROCESS EMPLOYING TRENCH ISOLATION p. C4-533 M.C. ROBERTS, P.H. BOLBOT et D.J. FOSTER DOI: https://doi.org/10.1051/jphyscol:19884111 RésuméPDF (705.3 KB)
A COMPARISON OF TRENCH FILLING MATERIALS FOR SUB-MICRON CMOS p. C4-537 P.H. BOLBOT, M.C. ROBERTS et P.L. MEDHURST DOI: https://doi.org/10.1051/jphyscol:19884112 RésuméPDF (988.3 KB)
A NOVEL BOROSILICATE GLASS (SiOB-BSG) BY LOW PRESSURE DECOMPOSITION OF A MONOMOLECULAR LIQUID PRECURSOR p. C4-541 H. TREICHEL, F.S. BECKER, D. FUCHS et T. KRUCK DOI: https://doi.org/10.1051/jphyscol:19884113 RésuméPDF (665.2 KB)
OPTIMISATION OF SELECTIVE POLYSILICON OXIDATION FOR 0.8µ.m-TECHNOLOGY p. C4-545 R. BURMESTER, M. KERBER et C. ZELLER DOI: https://doi.org/10.1051/jphyscol:19884114 RésuméPDF (2.074 MB)
AN ANALYSIS OF THE ADVANTAGES OF A BOX ISOLATION TECHNIQUE p. C4-549 E. FIGUERAS, S. HAZEBROUCK et F. VAN DE WIELE DOI: https://doi.org/10.1051/jphyscol:19884115 RésuméPDF (1.864 MB)
LIMITATIONS ON n+/p+ SPACING DUE TO SHADOWING EFFECTS IN A 0.7µm RETROGRADE WELL CMOS PROCESS p. C4-553 M.G. PITT et P.A. van der PLAS DOI: https://doi.org/10.1051/jphyscol:19884116 RésuméPDF (1.190 MB)
SIMULATION OF SOURCE/DRAIN STRUCTURES FOR SUBMICRON MOSFETs WITH AND WITHOUT PREAMORPHIZATION p. C4-557 M. ORLOWSKI, C. MAZURÉ et L. MADER DOI: https://doi.org/10.1051/jphyscol:19884117 RésuméPDF (806.5 KB)
AVALANCHE AND TUNNELING BREAKDOWN MECHANISMS IN HEMT'S POWER STRUCTURES p. C4-563 Y. CROSNIER, F. TEMCAMANI, D. LIPPENS et G. SALMER DOI: https://doi.org/10.1051/jphyscol:19884118 RésuméPDF (734.6 KB)
REAL-SPACE TRANSFER IN HETEROJUNCTION FET's : MONTE-CARLO SIMULATION AND ANALYTICAL MODEL p. C4-567 M. MOUIS, F. PAVIET-SALOMON, P. DOLLFUS et R. CASTAGNÉ DOI: https://doi.org/10.1051/jphyscol:19884119 RésuméPDF (1.039 MB)
USE OF A GATE DELAY EXPRESSION TO COMPARE SELF-ALIGNED SILICON BIPOLAR AND AlGaAs/GaAs HETEROJUNCTION BIPOLAR TECHNOLOGIES p. C4-571 P. ASHBURN, A.A. REZAZADEH, E.F. CHOR et A. BRUNNSCHWEILER DOI: https://doi.org/10.1051/jphyscol:19884120 RésuméPDF (572.9 KB)
COMPARISON OF ECL GATE PERFORMANCES USING DIFFERENT HETEROJUNCTION BIPOLAR TRANSISTORS PROCESS p. C4-575 J. DANGLA et D. HAVOND DOI: https://doi.org/10.1051/jphyscol:19884121 RésuméPDF (671.1 KB)
MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING p. C4-579 J.G. METCALFE, R.C. HAYES, A.J. HOLDEN et A.P. LONG DOI: https://doi.org/10.1051/jphyscol:19884122 RésuméPDF (658.7 KB)
NOISE OF GaAs DIODES p. C4-583 A. MOATADID, D. GASQUET, M. de MURCIA et J.P. NOUGIER DOI: https://doi.org/10.1051/jphyscol:19884123 RésuméPDF (899.8 KB)
PHOTOVOLTAIC INFRARED SENSOR ARRAY IN HETEROEPITAXIAL NARROW GAP LEAD-CHALCOGENIDES ON SILICON p. C4-587 J. MASEK, C. MAISSEN, H. ZOGG, S. BLUNIER, H. WEIBEL, A. LAMBRECHT, B. SPANGER, H. BÖTTNER et M. TACKE DOI: https://doi.org/10.1051/jphyscol:19884124 RésuméPDF (1.706 MB)
SURFACE PLASMON POLARITON ENHANCED LIGHT EMISSION AND PHOTORESPONSE IN SCHOTTKY DIODES p. C4-591 A. KÖCK, W. BEINSTINGL et E. GORNIK DOI: https://doi.org/10.1051/jphyscol:19884125 RésuméPDF (1.127 MB)
THE HOT-ELECTRON PROBLEM IN SUBMICRON MOSFET p. C4-597 W. HÄNSCH, M. ORLOWSKI et W. WEBER DOI: https://doi.org/10.1051/jphyscol:19884126 RésuméPDF (1.346 MB)
ELECTRON BEAM SOURCE MOLECULAR BEAM EPITAXY OF AlxGa1-xAs GRADED BAND GAP DEVICE STRUCTURES p. C4-607 R.J. MALIK, A.F.J. LEVI, B.F. LEVINE, R.C. MILLER, D.V. LANG, L.C. HOPKINS et R.W. RYAN DOI: https://doi.org/10.1051/jphyscol:19884127 RésuméPDF (873.3 KB)
POSITION RESOLVED CARRIER LIFETIME MEASUREMENTS IN SILICON POWER DEVICES BY TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY p. C4-617 G. BOHNERT, R. HÄCKER et A. HANGLEITER DOI: https://doi.org/10.1051/jphyscol:19884128 RésuméPDF (1.274 MB)
POWER MOS FET MODELS FOR "SWITCHING" CIRCUITS p. C4-621 P. ROSSEL, R. MAIMOUNI, M. BELABADIA, H. TRANDUC, C.E. CORDONNIER et M. BAIRANZADE DOI: https://doi.org/10.1051/jphyscol:19884129 RésuméPDF (1.063 MB)
PHYSICAL BEHAVIOUR MODELLING OF VDMOS DEVICES p. C4-625 J. PAREDES, J. FERNANDEZ, F. BERTA, S. HIDALGO, J. REBOLLO et J. MILLAN DOI: https://doi.org/10.1051/jphyscol:19884130 RésuméPDF (353.0 KB)
ON-RESISTANCE IN THE ALDMOST p. C4-629 G. NANZ, P. DICKINGER, W. KAUSEL et S. SELBERHERR DOI: https://doi.org/10.1051/jphyscol:19884131 RésuméPDF (1.108 MB)
ULTRAFAST SINGLE PHOTON DETECTOR WITH DOUBLE EPITAXIAL STRUCTURE FOR MINIMUM CARRIER DIFFUSION EFFECT p. C4-633 A. LACAITA, M. GHIONI et S. COVA DOI: https://doi.org/10.1051/jphyscol:19884132 RésuméPDF (1.245 MB)
A MINIATURIZED APPROACH TO THE CRYOELECTRONIC MAGNETIC FIELD EFFECT TRANSISTOR p. C4-637 W. CLAUSS, J. PARISI, J. PEINKE, U. RAU et R.P. HUEBENER DOI: https://doi.org/10.1051/jphyscol:19884133 RésuméPDF (203.4 KB)
FILTER STRUCTURE FOR SUB-MICRON FILTRATION FABRICATED IN SILICON p. C4-641 G. KITTILSLAND et G. STEMME DOI: https://doi.org/10.1051/jphyscol:19884134 RésuméPDF (1.093 MB)
GATE CURRENTS AND DEVICE DEGRADATION : CARRIER TRANSPORT IN GATE OXIDES OF MOSFET's p. C4-647 A. SCHWERIN et W. HÄNSCH DOI: https://doi.org/10.1051/jphyscol:19884135 RésuméPDF (1.462 MB)
ANALYSIS OF HOT CARRIER DEGRADATION IN AC STRESSED N-CHANNEL MOS TRANSISTORS USING THE CHARGE PUMPING TECHNIQUE p. C4-651 R. BELLENS, P. HEREMANS, G. GROESENEKEN et H.E. MAES DOI: https://doi.org/10.1051/jphyscol:19884136 RésuméPDF (1.887 MB)
DYNAMIC HOT-CARRIER DEGRADATION OF FAST-SWITCHING CMOS INVERTERS WITH DIFFERENT DUTY CYCLES p. C4-657 L. RISCH et W. WEBER DOI: https://doi.org/10.1051/jphyscol:19884137 RésuméPDF (1.424 MB)
DEGRADATION OF SHORT-CHANNEL MOS TRANSISTORS STRESSED AT LOW TEMPERATURE p. C4-661 C. NGUYEN-DUC, S. CRISTOLOVEANU, G. REIMBOLD et J. GAUTIER DOI: https://doi.org/10.1051/jphyscol:19884138 RésuméPDF (1.140 MB)
HOT ELECTRON RELIABILITY OF DEEP SUBMICRON MOS TRANSISTORS p. C4-665 G. REIMBOLD, F. PAVIET-SALOMON, H. HADDARA, G. GUEGAN et S. CRISTOLOVEANU DOI: https://doi.org/10.1051/jphyscol:19884139 RésuméPDF (1.174 MB)
INTERFACE STATE GENERATION IN NMOS TRANSISTORS DURING HOT CARRIER STRESS AT LOW TEMPERATURES p. C4-669 D. KRISHNA RAO, M.M. HEYNS et R.F. DE KEERSMAECKER DOI: https://doi.org/10.1051/jphyscol:19884140 RésuméPDF (633.6 KB)
TWO-DIMENSIONAL COMPUTER SIMULATION OF HOT CARRIER DEGRADATION IN N. MOSFETs p. C4-673 M. GARRIGUES, A. ALEXANDRE, P. ROJO, T. PEDRON, K. BELHADDAD et A. PONCET DOI: https://doi.org/10.1051/jphyscol:19884141 RésuméPDF (1.544 MB)
SPICE MODEL FOR TRANSIENT ANALYSIS OF EEPROM CELLS p. C4-677 R. BEZ, D. CANTARELLI, P. CAPPELLETTI et F. MAGGIONI DOI: https://doi.org/10.1051/jphyscol:19884142 RésuméPDF (1.505 MB)
CAD MOSFET MODEL FOR EPROM CELLS p. C4-681 N. BALLAY et B. BAYLAC DOI: https://doi.org/10.1051/jphyscol:19884143 RésuméPDF (1.313 MB)
VERY RAPID GROWTH OF HIGH QUALITY GaAs, InP AND RELATED III-V COMPOUNDS p. C4-689 M. DESCHLER, K. GRÜTER, A. SCHLEGEL, R. BECCARD, H. JÜRGENSEN et P. BALK DOI: https://doi.org/10.1051/jphyscol:19884144 RésuméPDF (951.6 KB)
IMPROVEMENT OF GaAs EPITAXIAL LAYERS BY INDIUM INCORPORATION p. C4-693 J. P. LAURENTI, P. ROENTGEN, K. WOLTER, K. SEIBERT, H. KURZ et J. CAMASSEL DOI: https://doi.org/10.1051/jphyscol:19884145 RésuméPDF (1.591 MB)
ELIMINATION OF TWINNING IN MOLECULAR BEAM EPITAXY OF GaAs/Si and GaAs/INSULATOR p. C4-697 C. FONTAINE, J. CASTAGNE, E. BEDEL et A. MUNOZ-YAGUE DOI: https://doi.org/10.1051/jphyscol:19884146 RésuméPDF (1.065 MB)
A GaAs ON Si COPLANAR TECHNOLOGY BY EMBEDDED MOLECULAR BEAM EPITAXY p. C4-701 J.B. LIANG, J. DE BOECK, R. MERTENS et G. BORGHS DOI: https://doi.org/10.1051/jphyscol:19884147 RésuméPDF (1.263 MB)
INVESTIGATION OF THE INFLUENCE OF DX CENTERS ON HEMT OPERATION AT ROOM TEMPERATURE p. C4-705 P. GODTS, E. CONSTANT, J. ZIMMERMANN et D. DEPREEUW DOI: https://doi.org/10.1051/jphyscol:19884148 RésuméPDF (470.1 KB)
ON THE MICROWAVE LOW TEMPERATURE ANALYSIS BEHAVIOUR OF HEMTs p. C4-709 A. BELACHE, A. VANOVERSCHELDE, G. DAMBRINE et M. WOLNY DOI: https://doi.org/10.1051/jphyscol:19884149 RésuméPDF (1.488 MB)
MODELING AND PERFORMANCE OF DOUBLE HETEROJUNCTION GaAlAs/GaAs INTEGRATED INJECTION LOGIC. FABRICATION AND DC CHARACTERIZATION OF THE BASIC CELL p. C4-713 A. MARTY, J. JAMAI, J.P. VANNEL et J.P. BAILBE DOI: https://doi.org/10.1051/jphyscol:19884150 RésuméPDF (1.281 MB)
GaInAs CAMEL DIODES GROWN BY MBE p. C4-717 M. MARSO, A. CHIN, P. BHATTACHARYA et H. BENEKING DOI: https://doi.org/10.1051/jphyscol:19884151 RésuméPDF (975.2 KB)
RESIST SCHEMES FOR SUBMICRON OPTICAL LITHOGRAPHY p. C4-723 F. COOPMANS DOI: https://doi.org/10.1051/jphyscol:19884152 RésuméPDF (820.1 KB)
HALF-MICROMETER N-MOS TECHNOLOGY FOR GIGABIT LOGIC p. C4-737 G. GUEGAN, M. LERME, J. GAUTIER, M. GUERIN, S. TEDESCO,, B. DAL'ZOTTO et G. REIMBOLD DOI: https://doi.org/10.1051/jphyscol:19884153 RésuméPDF (1.379 MB)
OPERATION OF MAJORITY AND MINORITY CARRIER MOSFET'S AT LIQUID HELIUM TEMPERATURE p. C4-741 B. DIERICKX, E. SIMOEN, J. VERMEIREN et C. CLAEYS DOI: https://doi.org/10.1051/jphyscol:19884154 RésuméPDF (1.634 MB)
A NOVEL METHOD FOR DIMENSIONAL LOSS CHARACTERIZATION p. C4-745 P. CAPRARA, C. BERGONZONI et T. CAVIONI DOI: https://doi.org/10.1051/jphyscol:19884155 RésuméPDF (684.2 KB)
NARROW CHANNEL EFFECT ON n- AND p-CHANNEL DEVICES FABRICATED WITH THE SILO AND BOX ISOLATION TECHNIQUES p. C4-749 J. L. COPPEE, E. FIGUERAS, B. GOFFIN, D. GLOESENER et F. VAN DE WIELE DOI: https://doi.org/10.1051/jphyscol:19884156 RésuméPDF (1.352 MB)
HIGH VOLTAGE SWITCHING P-CHANNEL STRUCTURE FOR CMOS ARCHITECTURES p. C4-753 C. MORI, G. CRISENZA et P. PICCO DOI: https://doi.org/10.1051/jphyscol:19884157 RésuméPDF (694.9 KB)
INFLUENCE OF HYDROGEN RELATED DEFECTS ON THE Qot, Dit BUILD-UP DUE TO STRESS AND ANNEALING IN THE MOS SYSTEM p. C4-757 F. WULF et D. BRÄUNIG DOI: https://doi.org/10.1051/jphyscol:19884158 RésuméPDF (1.606 MB)
A NEW PUNCHTHROUGH MODEL FOR SHORT CHANNEL MOSFET p. C4-761 D. CHEN et Z. LI DOI: https://doi.org/10.1051/jphyscol:19884159 RésuméPDF (293.7 KB)
HOT CARRIER SENSITIVITY OF MOSFET's EXPOSED TO SYNCHROTRON-LIGHT p. C4-767 G. PRZYREMBEL, R. MAHNKOPF et H.G. WAGEMANN DOI: https://doi.org/10.1051/jphyscol:19884160 RésuméPDF (1.134 MB)
ANNEALING OF HOT-CARRIER-INDUCED MOSFET DEGRADATION p. C4-771 R. MAHNKOPF, G. PRZYREMBEL et H.G. WAGEMANN DOI: https://doi.org/10.1051/jphyscol:19884161 RésuméPDF (1.137 MB)
A NEW METHOD FOR THE DETERMINATION OF THE SPATIAL DISTRIBUTION OF HOT CARRIER DAMAGE p. C4-775 R. MAHNKOPF, G. PRZYREMBEL et H.G. WAGEMANN DOI: https://doi.org/10.1051/jphyscol:19884162 RésuméPDF (1.192 MB)
HOT CARRIER STRESS INDUCED CHANGES IN MOST TRANSCONDUCTANCE STRUCTURE p. C4-779 C. BERGONZONI, R. BENECCHI et P. CAPRARA DOI: https://doi.org/10.1051/jphyscol:19884163 RésuméPDF (414.2 KB)
OXIDE DEGRADATION AND BREAKDOWN IN STRESSED MOS CAPACITORS p. C4-783 I. PLACENCIA, J. SUÑÉ, N. BARNIOL, E. FARRÉS et X. AYMERICH DOI: https://doi.org/10.1051/jphyscol:19884164 RésuméPDF (488.5 KB)
THE IMPACT OF DIFFERENT HOT-CARRIER-DEGRADATION COMPONENTS ON THE OPTIMIZATION OF SUBMICRON n-CHANNEL LDD TRANSISTORS p. C4-787 P.T.J. BIERMANS, T. POORTER et H.J.H. MERKS-EPPINGBROEK DOI: https://doi.org/10.1051/jphyscol:19884165 RésuméPDF (2.140 MB)
MOSFET GATE CURRENT MODELLING USING MONTE-CARLO METHOD p. C4-791 J. VOVES et J. VESELY DOI: https://doi.org/10.1051/jphyscol:19884166 RésuméPDF (1.241 MB)
ELECTROLUMINESCENCE FROM SILICON DEVICES -A TOOL FOR DEVICE AND MATERIAL CHARACTERIZATION- p. C4-797 K. PENNER DOI: https://doi.org/10.1051/jphyscol:19884167 RésuméPDF (1.028 MB)
SOME ASPECTS OF THE SCANNING ACOUSTIC MICROSCOPE CONTRIBUTIONS IN THE EVALUATION OF DEVICE RELIABILITY p. C4-801 A. SAIED, C. AMAUDRIC DU CHAFFAUT, J.M. SAUREL et J. ATTAL DOI: https://doi.org/10.1051/jphyscol:19884168 RésuméPDF (1.414 MB)
ELECTRON BEAM WRITING ERASURE SWITCHES p. C4-805 P. GIRARD, B. PISTOULET et M. VALENZA DOI: https://doi.org/10.1051/jphyscol:19884169 RésuméPDF (844.9 KB)
CHARACTERIZATION OF ANOMALOUS LATCH-UP EFFECTS BY MEANS OF INFRARED MICROSCOPY AND SPICE SIMULATION p. C4-809 C. CANALI, F. CORSI, M. MUSCHITIELLO, M. STUCCHI et E. ZANONI DOI: https://doi.org/10.1051/jphyscol:19884170 RésuméPDF (1.230 MB)
ELECTRICAL PERFORMANCES COMPARISON OF SEMI AND FULLY RECESSED ISOLATION STRUCTURES p. C4-813 E. DUBOIS, J.-L. COPPEE, B. BACCUS et D. COLLARD DOI: https://doi.org/10.1051/jphyscol:19884171 RésuméPDF (1.280 MB)
A NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS AT AMBIENT AND LIQUID HELIUM TEMPERATURES p. C4-817 F. BALESTRA, L. HAFEZ et G. GHIBAUDO DOI: https://doi.org/10.1051/jphyscol:19884172 RésuméPDF (128.5 KB)
SUBSTRATE AND DEFECT INFLUENCES ON THE POSITION-RESPONSE LINEARITY OF POSITION-SENSITIVE DETECTORS p. C4-821 Y.Z. XING DOI: https://doi.org/10.1051/jphyscol:19884173 RésuméPDF (1.725 MB)
