| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-253 - C4-256 | |
| DOI | https://doi.org/10.1051/jphyscol:1988452 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-253-C4-256
DOI: 10.1051/jphyscol:1988452
1 Dept. of Electronics Unviersity of Ancona, v. Brecce Bianche, I-60131 Ancona, Italy
2 DEIS University of Bologna, v. le Risorgimento 2, I-40136 Bologna, Italy
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-253-C4-256
DOI: 10.1051/jphyscol:1988452
A NEW ANALYTICAL AND STATISTICAL-ORIENTED APPROACH FOR THE TWO-DIMENSIONAL ANALYSIS OF SHORT-CHANNEL MOSFET's
M. CONTI1, C. TURCHETTI1 et G. MASETTI21 Dept. of Electronics Unviersity of Ancona, v. Brecce Bianche, I-60131 Ancona, Italy
2 DEIS University of Bologna, v. le Risorgimento 2, I-40136 Bologna, Italy
Abstract
An approximated analytical solution of Poisson's equation for the short-channel MOSFET opérating in the subthreshold regime is presented. It is shown that the proposed approach predicts a dependence of the threshold voltage on process parameters and drain and substrate voltages in very good agreement with two-dimensional analysis and with available experimental data. Finally, the method of this work, which permits to gain a factor of about 103 in CPU time with respect to numerical modeling for threshold predictions, seems particularly suited for statistical modeling.