| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-629 - C4-632 | |
| DOI | https://doi.org/10.1051/jphyscol:19884131 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-629-C4-632
DOI: 10.1051/jphyscol:19884131
Institut für Allgemeine Elektrotechnik und Elektronik, Technical University Vienna, Gusshausstrasse 27-29, A-1040 Vienna, Austria
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-629-C4-632
DOI: 10.1051/jphyscol:19884131
ON-RESISTANCE IN THE ALDMOST
G. NANZ, P. DICKINGER, W. KAUSEL et S. SELBERHERRInstitut für Allgemeine Elektrotechnik und Elektronik, Technical University Vienna, Gusshausstrasse 27-29, A-1040 Vienna, Austria
Abstract
Recently a new lateral power MOSFET named accumulation lateral DMOS transistor (ALDMOST) has been proposed. We have investigated the dependence of the ON-resistance of this type of device on the oxide thickness and the additional semi-insulating layer along the surface of the gate oxide above the drift region. This layer has been introduced in order to lower the high ON-resistance which is in general a disadvantage of this type of MOS transistors.