| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-761 - C4-764 | |
| DOI | https://doi.org/10.1051/jphyscol:19884159 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-761-C4-764
DOI: 10.1051/jphyscol:19884159
Institute of Microelectronics, Tsinghua University, Beijing, China
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-761-C4-764
DOI: 10.1051/jphyscol:19884159
A NEW PUNCHTHROUGH MODEL FOR SHORT CHANNEL MOSFET
D. CHEN et Z. LIInstitute of Microelectronics, Tsinghua University, Beijing, China
Abstract
After the source-drain punchthrough was considered detailly, a new set of analytical models for punchthrough voltage VP were suggested, which are suitable to NMOSFET with uniformly doped substrate or channel ion-implanted substrate and PMOSFET with buried channel, as well as a high speed numerical simulation method was developed for autosearching of VP. Excellent agreements were shown between the results of numerical simulation and analytical models.