| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-775 - C4-778 | |
| DOI | https://doi.org/10.1051/jphyscol:19884162 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-775-C4-778
DOI: 10.1051/jphyscol:19884162
Institut für Werkstoffe der Elektrotechnik der Technisohen Universität Berlin, Jebensstr. 1, D-1000 Berlin 12, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-775-C4-778
DOI: 10.1051/jphyscol:19884162
A NEW METHOD FOR THE DETERMINATION OF THE SPATIAL DISTRIBUTION OF HOT CARRIER DAMAGE
R. MAHNKOPF, G. PRZYREMBEL et H.G. WAGEMANNInstitut für Werkstoffe der Elektrotechnik der Technisohen Universität Berlin, Jebensstr. 1, D-1000 Berlin 12, F.R.G.
Abstract
A new method is presented for the experimental evaluation of the spatial distribution of interface states and fixed oxide charges generated by hot carriers. This method is fully based on HF-capacitance (CV) and charge-pumping (CP) measurements. A general discussion of the method is followed by an application to MOSFET's with different channel lengths stressed with various bias conditions.