| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-33 - C4-36 | |
| DOI | https://doi.org/10.1051/jphyscol:1988405 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-33-C4-36
DOI: 10.1051/jphyscol:1988405
Philips Research Laboratories, NL-5600 JA Eindhoven, The Netherlands
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-33-C4-36
DOI: 10.1051/jphyscol:1988405
DEVICE CHARACTERISATION OF A HIGH DENSITY HALF-MICRON CMOS PROCESS
P.H. WOERLEE, C.A.H. JUFFERMANS, H. LIFKA, A.J. WALKER, T. POORTER, H.J.H. MERKS-EPPINGBROEK et F.M. OUDE LANSINKPhilips Research Laboratories, NL-5600 JA Eindhoven, The Netherlands
Abstract
The device characterisation and the ringoscillator performance of a high density half-micron CMOS process were studied. A novel recessed field isolation technology, twin retrograde wells, N+ poly-silicon gate material and lightly doped drain structures for both the n- and p-channel devices were used in the device fabrication. The device properties and the ringoscillator performance will be presented.