| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-393 - C4-396 | |
| DOI | https://doi.org/10.1051/jphyscol:1988482 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-393-C4-396
DOI: 10.1051/jphyscol:1988482
1 Department of Electrical Engineering and Electronics, Liverpool University, PO Box 147, GB-Liverpool L69 3BX, Great-Britain
2 Department of Material Science and Engineering, Liverpool University, PO Box 147, GB-Liverpool L69 3BX, Great-Britain
3 AT&T Bell Laboratories, Murray Hill, NJ 07974, USA
4 GEC Hirst, Wembley, GB-Middlesex HA9 7PP, Great-Britain
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-393-C4-396
DOI: 10.1051/jphyscol:1988482
PLASMA ANODISATION OF SILICON FOR ADVANCED VLSI
S. TAYLOR1, W. ECCLESTON1, J. RINGNALDA2, D.M. MAHER2, 3, D.J. EAGLESHAM2, C.J. HUMPHREYS2 et D.J. GODFREY41 Department of Electrical Engineering and Electronics, Liverpool University, PO Box 147, GB-Liverpool L69 3BX, Great-Britain
2 Department of Material Science and Engineering, Liverpool University, PO Box 147, GB-Liverpool L69 3BX, Great-Britain
3 AT&T Bell Laboratories, Murray Hill, NJ 07974, USA
4 GEC Hirst, Wembley, GB-Middlesex HA9 7PP, Great-Britain
Abstract
Inductively coupled, RF stimulated plasma anodisation of silicon is discussed in terms of both MOS electrical properties and the oxidation of Si3N4/SiO2 /Si materials systems. The electrical properties of the plasma oxides grown at 400°C are comparable to those of thermal oxides grown at 1000°C. Preliminary results based on transmission electron microscopy observations prior to and after plasma anodisation indicate that Si3N4/SiO2 strips on silicon exhibit interesting lateral oxidation behaviour and therefore Si3N4 may be a potential mask against plasma anodisation for advanced VLSI.