| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-745 - C4-748 | |
| DOI | https://doi.org/10.1051/jphyscol:19884155 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-745-C4-748
DOI: 10.1051/jphyscol:19884155
SGS-Thomson Microelectronics, Via C. Olivetti 2, Agrate Brianza (MI), Italy
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-745-C4-748
DOI: 10.1051/jphyscol:19884155
A NOVEL METHOD FOR DIMENSIONAL LOSS CHARACTERIZATION
P. CAPRARA, C. BERGONZONI et T. CAVIONISGS-Thomson Microelectronics, Via C. Olivetti 2, Agrate Brianza (MI), Italy
Abstract
The present tendency toward devices scaling in VLSI technology makes more and more difficult the electrical characterization of channel dimensions. The narrow channel effects have had a great consideration for what concern device modeling, but a minor attention about dimensional loss problems. The aim of this work is to propose an effective width characterization method based on transconductance and not affected by the typical problems related to narrow channel devices. Moreover, a compared analysis of this method to an other one previously proposed [1] is shown pointing out the phenomenological differences.