| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-171 - C4-174 | |
| DOI | https://doi.org/10.1051/jphyscol:1988434 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-171-C4-174
DOI: 10.1051/jphyscol:1988434
Swedish Institute of Microelectronics, PO Box 1084, S-164 21 Kista, Sweden
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-171-C4-174
DOI: 10.1051/jphyscol:1988434
PROPERTIES OF WSi2 : OHMIC CONTACT TO N+ AND P+ Si, BARRIER BETWEEN Al AND Si, AND FEASIBILITY AS FIRST METAL IN MULTILEVEL METALLIZATION PROCESSES
S.-L. ZHANG, M. HAMMAR, T. JOHANSSON et R. BUCHTASwedish Institute of Microelectronics, PO Box 1084, S-164 21 Kista, Sweden
Abstract
The electrical and chemical properties of WSi2 as well as the silicide formation have been examined with respect to applications in VLSI Si-Technology.