| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-347 - C4-355 | |
| DOI | https://doi.org/10.1051/jphyscol:1988473 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-347-C4-355
DOI: 10.1051/jphyscol:1988473
AEG Research Center, D-7900 Ulm, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-347-C4-355
DOI: 10.1051/jphyscol:1988473
SILICON MOLECULAR BEAM EPITAXY : STATUS ; DEVICES ; TRENDS
E. KASPERAEG Research Center, D-7900 Ulm, F.R.G.
Abstract
The single crystal growth, by molecular beam epitaxy, of materials compatible with silicon is described, and device applications are given. Process temperatures are decreased to 240°C, heterojunction devices are fabricated, strained layer Si/Ge superlattices are investigated, and silicon based monolithic integration of heterojunction devices and conventional devices is suggested.