| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-89 - C4-92 | |
| DOI | https://doi.org/10.1051/jphyscol:1988418 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-89-C4-92
DOI: 10.1051/jphyscol:1988418
1 Siemens AG, Zentrale Forschung und Entwicklung, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
2 Institut für Angewandte Physik, Universitat Regensburg, D-8400 Regensburg, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-89-C4-92
DOI: 10.1051/jphyscol:1988418
HIGH-SPEED OPTICAL DETECTION UP TO 2.5Gbit/s WITH A DOUBLE POLYSILICON SELF-ALIGNED SILICON BIPOLAR TRANSISTOR
W. BOCK1, L. TREITINGER1 et W. PRETTL21 Siemens AG, Zentrale Forschung und Entwicklung, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
2 Institut für Angewandte Physik, Universitat Regensburg, D-8400 Regensburg, F.R.G.
Abstract
The photo response of a standard high-speed self-aligned silicon bipolar transistor has been investigated. The photosignal of the base-collector diode is found to consist of at least two current components. Optical detection capabilities are demonstrated by excitation with modulated laser light at 830 nm wavelength up to data rates of 2.5Gbit/s.