| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-579 - C4-582 | |
| DOI | https://doi.org/10.1051/jphyscol:19884122 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-579-C4-582
DOI: 10.1051/jphyscol:19884122
Plessey Research Caswell Ltd., Caswell, Towcester, Northants., GB-NN12 8EQ, Great-Britain
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-579-C4-582
DOI: 10.1051/jphyscol:19884122
MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING
J.G. METCALFE, R.C. HAYES, A.J. HOLDEN et A.P. LONGPlessey Research Caswell Ltd., Caswell, Towcester, Northants., GB-NN12 8EQ, Great-Britain
Abstract
A high power heterojunction bipolar transistor has been designed and fabricated. A model of this transistor has been developed for the SPICE simulation package. A program has been written to use SPICE to run simulations on the model and calculate matching conditions for optimum output power.