| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-495 - C4-498 | |
| DOI | https://doi.org/10.1051/jphyscol:19884102 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-495-C4-498
DOI: 10.1051/jphyscol:19884102
Siemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-495-C4-498
DOI: 10.1051/jphyscol:19884102
RELIABILITY ASPECTS OF VLSI METALLISATION WITH DIFFUSION BARRIERS
G. RÖSKA et F. NEPPLSiemens AG, Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
Abstract
In this work we show the necessity of diffusion barriers for scaled VLSI and investigate the resulting changes of reliability risks. Accelerating stress tests at relevant test structures are presented and discussed in detail.