| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-299 - C4-302 | |
| DOI | https://doi.org/10.1051/jphyscol:1988462 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-299-C4-302
DOI: 10.1051/jphyscol:1988462
1 Siemens AG, Corporate Research and Development, Microelectronics, D-8000 München 83, F.R.G.
2 Sietec, Arbeitsgruppe Mikrostrukturtechnik, D-1000 Berlin 13, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-299-C4-302
DOI: 10.1051/jphyscol:1988462
THE INFLUENCE OF X-RAY DAMAGE ON ELECTRON-INDUCED INTERFACE DEGRADATION IN MOS CAPACITORS
U. SCHWALKE1, E.P. JACOBS1 et B. BREITHAUPT21 Siemens AG, Corporate Research and Development, Microelectronics, D-8000 München 83, F.R.G.
2 Sietec, Arbeitsgruppe Mikrostrukturtechnik, D-1000 Berlin 13, F.R.G.
Abstract
The radiation response of MOS capacitors and their degradation resistance after annealing has been investigated. Compared to unexposed samples, irradiated and subsequently annealed MOS capacitors were found to be more prone to electron-induced interface degradation. The enhanced degradation correlates with the initial radiation damage and is lowest in TaSi2 silicide gates. To which extent hydrogen contamination of the oxide or mechanical strain may account for the observed results will be discussed.