| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-161 - C4-163 | |
| DOI | https://doi.org/10.1051/jphyscol:1988432 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-161-C4-163
DOI: 10.1051/jphyscol:1988432
University of Exeter, School of Engineering, North Park Road, Exeter, BG-Devon EX4 4QF, Great-Britain
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-161-C4-163
DOI: 10.1051/jphyscol:1988432
ON THE ORIGIN OF 1/F NOISE IN MOS TRANSISTORS
E.J.P. MAYUniversity of Exeter, School of Engineering, North Park Road, Exeter, BG-Devon EX4 4QF, Great-Britain
Résumé
Il est proposé que le bruit 1/f est dû aux états rapides de surface qui causent la. redistribution des transporteurs par diffusion. C'est pour quoi la densité du transporteur est modulée. Il est démontré que la racine carrée du module de la transformation Fourier de la densité est inversement proportionnelle à la fréquence.
Abstract
It is proposed that 1/f noise is due to 'fast surface states' which give rise to a redistribution of carriers by diffusion. This leads to the modulation of the carrier density. The square of the modulus of the Fourier transform of the carrier density time function is shown to be inversely proportional to the frequency.