| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-617 - C4-620 | |
| DOI | https://doi.org/10.1051/jphyscol:19884128 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-617-C4-620
DOI: 10.1051/jphyscol:19884128
4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-617-C4-620
DOI: 10.1051/jphyscol:19884128
POSITION RESOLVED CARRIER LIFETIME MEASUREMENTS IN SILICON POWER DEVICES BY TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY
G. BOHNERT, R. HÄCKER et A. HANGLEITER4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-7000 Stuttgart 80, F.R.G.
Abstract
We present a new versatile method for measuring position resolved carrier lifetimes in semiconductor power devices, using time resolved photoluminescence spectroscopy. The experimental results obtained at ASCRs and silicon diodes are in good agreement to what is expected from the doping profile. In addition the effects of lifetime reducing processes, e.g. gold diffusion, e-- or H+- irradiation can be clearly demonstrated. The resolution in position is only limited by carrier diffusion.