| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-141 - C4-144 | |
| DOI | https://doi.org/10.1051/jphyscol:1988427 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-141-C4-144
DOI: 10.1051/jphyscol:1988427
1 Hahn-Meitner-Institut Berlin GmbH, Dept. Dataprocessing and Electronics, Glienicker Strasse 100, D-1000 Berlin 39, F.R.G.
2 IBM East Fishkill Laboratories, Hopewell Jnct., NY 12533, U.S.A., Work was originated as part of an M.S. Thesis at the Physics Dept. of Worcester Polytechnic Institute, Worcester, MA 12603, U.S.A., completed 10.1987
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-141-C4-144
DOI: 10.1051/jphyscol:1988427
A CONTACTLESS TECHNIQUE FOR THE CHARACTERIZATION OF INTERNALLY GETTERED CZ SILICON
M.A. BRIERE1, 21 Hahn-Meitner-Institut Berlin GmbH, Dept. Dataprocessing and Electronics, Glienicker Strasse 100, D-1000 Berlin 39, F.R.G.
2 IBM East Fishkill Laboratories, Hopewell Jnct., NY 12533, U.S.A., Work was originated as part of an M.S. Thesis at the Physics Dept. of Worcester Polytechnic Institute, Worcester, MA 12603, U.S.A., completed 10.1987
Abstract
A characterization technique is described which is capable of measuring the salient electronic properties of the layered structure formed during the internal gettering process in Czochralski grown silicon. The method is contactless and involves the use of a two laser, pump-probe, system to measure the carrier lifetimes in the defect-free-zone (DFZ) and the bulk as well as to measure the width of the DFZ. Excellent agreement is found with the results of theory and those of the standard bevel and etch method.