| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-713 - C4-716 | |
| DOI | https://doi.org/10.1051/jphyscol:19884150 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-713-C4-716
DOI: 10.1051/jphyscol:19884150
Laboratoire d'Automatique et d'Analyse des Systèmes du CNRS 7, Av. du Colonel Roche, F-31077 Toulouse Cedex, France
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-713-C4-716
DOI: 10.1051/jphyscol:19884150
MODELING AND PERFORMANCE OF DOUBLE HETEROJUNCTION GaAlAs/GaAs INTEGRATED INJECTION LOGIC. FABRICATION AND DC CHARACTERIZATION OF THE BASIC CELL
A. MARTY, J. JAMAI, J.P. VANNEL et J.P. BAILBELaboratoire d'Automatique et d'Analyse des Systèmes du CNRS 7, Av. du Colonel Roche, F-31077 Toulouse Cedex, France
Abstract
This paper first presents a quantitative estimate of the potentialities of the GaAlAs/GaAs H.I2L which relies on an accurate modeling related to physical device parameters. The interdependence of the forward and reverse current gains of the DHBTs processed by MBE and Mg-ion implantation which is subsequently analysed provides a verification of the charge-control models used for this evaluation.