| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-175 - C4-178 | |
| DOI | https://doi.org/10.1051/jphyscol:1988435 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-175-C4-178
DOI: 10.1051/jphyscol:1988435
1 Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
2 Deparment of Integrated Circuits, Technical University Munich
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-175-C4-178
DOI: 10.1051/jphyscol:1988435
EFFECTS OF COMPOUND FORMATION WITH DOPANTS IN TaSi2
V. PROBST1, 2, H. KABZA1 et H. GOEBEL11 Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
2 Deparment of Integrated Circuits, Technical University Munich
Abstract
TaB2 compound formation in TaSi2 is demonstrated by means of SEM, SIMS- and XRD analysis. This holds for B-doping of TaSi2 by means of diffusion from poly-Si as well as for direct implantation. The formation of TaAs could not yet be proven. As the mobile boron concentration level in TaSi2 is low due to the compound formation diffusion from TaSi2 into Si is rather limited.