| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-359 - C4-362 | |
| DOI | https://doi.org/10.1051/jphyscol:1988474 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-359-C4-362
DOI: 10.1051/jphyscol:1988474
Dept. of Electronic Engineering, University of Napoli, Via Claudio 21, I-80125 Napoli, Italy
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-359-C4-362
DOI: 10.1051/jphyscol:1988474
MEASUREMENT OF MINORITY-CARRIER LIFETIME AND INTERFACE RECOMBINATION VELOCITIES IN P-I-N DIODES, FROM HIGH FREQUENCY RESPONSE OF A BIPOLAR JFET STRUCTURE
G. VITALE et P. SPIRITODept. of Electronic Engineering, University of Napoli, Via Claudio 21, I-80125 Napoli, Italy
Abstract
A new method to measure the minority-carrier recombination lifetime in the low-doped layer of a p-i-n diode, and its emitter recombination current, is presented. The method is based on the measurement of the cutoff frequency of a three terminal device structure, similar to a vertical JFET, that incorporates the diode under test. The paper displays the basic theory of the measurement and some experimental results.