| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-657 - C4-660 | |
| DOI | https://doi.org/10.1051/jphyscol:19884137 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-657-C4-660
DOI: 10.1051/jphyscol:19884137
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-657-C4-660
DOI: 10.1051/jphyscol:19884137
DYNAMIC HOT-CARRIER DEGRADATION OF FAST-SWITCHING CMOS INVERTERS WITH DIFFERENT DUTY CYCLES
L. RISCH et W. WEBERSiemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, D-8000 München 83, F.R.G.
Abstract
The frequency shift of ring oscillators operated at high power supply voltages exhibits hot-carrier degradation similar to the well-known stress effects measured at single transistors. The predicted duty cycles based on substrate currents generated during the fast switching periods yield results which are in good agreement with the degradation data from ring oscillators and externally switched inverters only for short stress times. For long stress times, however, deviations are reported.