| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-767 - C4-770 | |
| DOI | https://doi.org/10.1051/jphyscol:19884160 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-767-C4-770
DOI: 10.1051/jphyscol:19884160
Institut für Werkstoffe der Elektrotechnik der Technischen Universität Berlin, Jebensstr. 1, D-1000 Berlin 12, F.R.G.
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-767-C4-770
DOI: 10.1051/jphyscol:19884160
HOT CARRIER SENSITIVITY OF MOSFET's EXPOSED TO SYNCHROTRON-LIGHT
G. PRZYREMBEL, R. MAHNKOPF et H.G. WAGEMANNInstitut für Werkstoffe der Elektrotechnik der Technischen Universität Berlin, Jebensstr. 1, D-1000 Berlin 12, F.R.G.
Abstract
The influence of synchrotron-light irradiation for p- and n-channel MOSFET's on their sensitivity to hot carrier degradation was investigated. The radiation induces additional interface states and a positive oxide charge. Annealing at 450°C reduces the interface state density to its initial value but not the oxide charge. A hot carrier stress can compensate this remaining charge by trapping electrons. This effect produces an enhanced shift of the threshold voltage compared to non-irradiated devices. After compensating all of the charge due to the irradiation the devices have a degradation behavior comparable to the non irradiated ones.