| Numéro |
J. Phys. Colloques
Volume 49, Numéro C4, Septembre 1988
ESSDERC 8818th European Solid State Device Research Conference |
|
|---|---|---|
| Page(s) | C4-245 - C4-248 | |
| DOI | https://doi.org/10.1051/jphyscol:1988450 | |
ESSDERC 88
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-245-C4-248
DOI: 10.1051/jphyscol:1988450
Institut für Allgemeine Elektrotechnik und Elektronik, Technische Universität Wien, Gusshausstrasse 27-29, A-1040 Wien, Austria
18th European Solid State Device Research Conference
J. Phys. Colloques 49 (1988) C4-245-C4-248
DOI: 10.1051/jphyscol:1988450
3D MOSFET DEVICE EFFECTS DUE TO FIELD OXIDE
M. THURNER et S. SELBERHERRInstitut für Allgemeine Elektrotechnik und Elektronik, Technische Universität Wien, Gusshausstrasse 27-29, A-1040 Wien, Austria
Abstract
This paper presents 3D effects of MOSFET's due to the nonplanar nature of the field-oxide body. The investigations have been carried out by MINIMOS 5 our fully three-dimensional simulation program. Three-dimensional effects like threshold shift for small channel devices, channel narrowing and the enhanced conductivity at the channel edge have been successfully modeled.