Supplément au Journal de Physique Colloques

DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON p. C4-3

D. Adler

DOI: https://doi.org/10.1051/jphyscol:1981401

TWO DIMENSIONAL ELECTRON LOCALIZATION p. C4-17

M. Pepper

DOI: https://doi.org/10.1051/jphyscol:1981402

CONDUCTION NEAR A MOBILITY EDGE p. C4-27

N.F. Mott

DOI: https://doi.org/10.1051/jphyscol:1981403

SOME PROBLEMS OF THE THEORY OF ELECTRON ENERGY SPECTRUM OF A DISORDERED SEMICONDUCTOR p. C4-33

V.L. Bonch-Bruevich et A.G. Mironov

DOI: https://doi.org/10.1051/jphyscol:1981404

FINITE SIZE SCALING APPROACH TO ANDERSON LOCALIZATION p. C4-37

J.L. Pichard et G. Sarma

DOI: https://doi.org/10.1051/jphyscol:1981405

THE DECIMATION METHOD AND ANDERSON LOCALIZATION p. C4-47

D. Weaire et C.J. Lambert

DOI: https://doi.org/10.1051/jphyscol:1981406

ANDERSON LOCALISATION IN TWO-BAND SYSTEMS p. C4-51

H. Aoki

DOI: https://doi.org/10.1051/jphyscol:1981407

LOCALIZATION OF ELECTRONS IN TWO-DIMENSIONAL RANDON NETWORKS p. C4-55

K. Tsujino, M. Yamamoto, A. Tokunaga et F. Yonezawa

DOI: https://doi.org/10.1051/jphyscol:1981408

DISORDER INDUCED DENSITY OF STATES WITHIN THE BAND GAP p. C4-59

H. Leschke et B. Kramer

DOI: https://doi.org/10.1051/jphyscol:1981409

NEW NUMERICAL METHOD FOR THE ELECTRONIC PROPERTIES OF DISORDERED SYSTEMS p. C4-63

A. MacKinnon, B. Kramer et W. Graudenz

DOI: https://doi.org/10.1051/jphyscol:1981410

A SIMPLE INTERPRETATION OF ELECTRON LOCALISATION BEHAVIOUR IN WEAKLY DISORDERED SYSTEMS p. C4-67

C.H. Hodges

DOI: https://doi.org/10.1051/jphyscol:1981411

THE THEORY OF TRANSPORT IN AMORPHOUS SEMICONDUCTORS p. C4-73

B. Movaghar

DOI: https://doi.org/10.1051/jphyscol:1981412

DISPERSIVE TRANSPORT IN R-HOPPING SYSTEMS p. C4-83

H. Imgrund et H. Overhof

DOI: https://doi.org/10.1051/jphyscol:1981413

THE HALL EFFECT DUE TO HOPPING CONDUCTION IN THE LOCALIZED STATES OF AMORPHOUS SEMICONDUCTORS p. C4-87

L. Friedman et M. Pollak

DOI: https://doi.org/10.1051/jphyscol:1981414

THE HALL MOBILITY OF HOPPING CARRIERS p. C4-91

P.N. Butcher et J.A. McInnes

DOI: https://doi.org/10.1051/jphyscol:1981415

MODELLING OF THE BEHAVIOUR OF HOPPING CONDUCTIVITY IN A SOLID EXHIBITING A SEMICONDUCTOR-INSULATOR TRANSITION, AS A FUNCTION OF FREQUENCY p. C4-95

J.C. Giuntini, J.L. Jacquemin, J.V. Zanchetta et G. Bordure

DOI: https://doi.org/10.1051/jphyscol:1981416

TEMPERATURE DEPENDENCE OF THE HOPPING HALL MOBILITY IN SPATIALLY AND ENERGETICALLY DISORDERED SYSTEMS p. C4-99

M. Grünewald, H. Müller, P. Thomas et D. Würtz

DOI: https://doi.org/10.1051/jphyscol:1981417

TRANSPORT PROPERTIES OF COMPENSATED a-Si FILMS p. C4-103

W. Beyer, H. Mell et H. Overhof

DOI: https://doi.org/10.1051/jphyscol:1981418

AC LOSS IN AMORPHOUS GERMANIUM AT LOW TEMPERATURES p. C4-107

A.R. Long, W.R. Hogg, N. Balkan et R.P. Ferrier

DOI: https://doi.org/10.1051/jphyscol:1981419

MONTE CARLO SIMULATION OF VARIABLE RANGE HOPPING AT THE FERMI LEVEL p. C4-111

G. Schönherr, H. Bässler et M. Silver

DOI: https://doi.org/10.1051/jphyscol:1981420

THEORY OF TEMPERATURE AND INTENSITY DEPENDENCE OF PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS p. C4-115

G.H. Döhler

DOI: https://doi.org/10.1051/jphyscol:1981421

A COMPARISON OF COHERENT POTENTIAL AND RANDOM WALK METHODS FOR CALCULATING THE TRANSPORT PROPERTIES OF AMORPHOUS SEMICONDUCTORS p. C4-119

V. Halpern

DOI: https://doi.org/10.1051/jphyscol:1981422

AC CONDUCTIVITY OF DISORDERED SOLIDS BELOW 10¹¹ Hz p. C4-123

U. Strom et K.L. Ngai

DOI: https://doi.org/10.1051/jphyscol:1981423

THEORY OF DISPERSIVE TRANSPORT IN AMORPHOUS SEMICONDUCTORS p. C4-127

K. Godzik et W. Schirmacher

DOI: https://doi.org/10.1051/jphyscol:1981424

ELECTRONIC STATES IN AMORPHOUS GERMANIUM CHALCOGENIDES p. C4-133

J. Ma¡ek et B. Velický

DOI: https://doi.org/10.1051/jphyscol:1981425

THE ELECTRONIC STRUCTURE OF A MODEL DEFECT IN HYDROGENATED AMORPHOUS SILICON p. C4-137

D.P. DiVincenzo, J. Bernholc et M.H. Brodsky

DOI: https://doi.org/10.1051/jphyscol:1981426

A SCALING THEORY FOR HOPPING CONDUCTION p. C4-141

M. Pollak

DOI: https://doi.org/10.1051/jphyscol:1981427

MAGNETIC FIELD DEPENDENCE OF THE PHOTO- AND DARK CONDUCTIVITY IN DOPED a-Si:H FILMS p. C4-143

D. Weller, H. Mell, L. Schweitzer et J. Stuke

DOI: https://doi.org/10.1051/jphyscol:1981428

AC FIELD AND FREQUENCY DEPENDENCE OF a-Si:H CONDUCTIVITY AT 4,2 K p. C4-147

B. Pistoulet, F. Roche et A. Cagna

DOI: https://doi.org/10.1051/jphyscol:1981429

CONDUCTIVITY MEASUREMENTS ON UHV DEPOSITED AMORPHOUS SILICON p. C4-151

P. Thomas et J.C. Flachet

DOI: https://doi.org/10.1051/jphyscol:1981430

TEMPERATURE DEPENDENCE OF THE ELECTRON DRIFT MOBILITY IN HYDROGENATED a-Si PREPARED BY SPUTTERING p. C4-155

T. Tiedje, T.D. Moustakas et J.M. Cebulka

DOI: https://doi.org/10.1051/jphyscol:1981431

TRANSPORT PROPERTIES OF AMORPHOUS As₂Se₃ p. C4-159

A.C. Sharp, J.M. Marshall et H.S. Fortuna

DOI: https://doi.org/10.1051/jphyscol:1981432

ELECTRON DRIFT MOBILITY MEASUREMENT IN UNDOPED TRIODE DC SPUTTERED a-Si : H p. C4-163

J.F. Peyre, J. Baixeras, D. Mencaraglia, P. Andro et C. Longeaud

DOI: https://doi.org/10.1051/jphyscol:1981433

CONTRIBUTION OF SINGLE POLARON HOPPING TO AC CONDUCTION IN AMORPHOUS CHALCOGENIDES p. C4-167

K. Shimakawa

DOI: https://doi.org/10.1051/jphyscol:1981434

AC TRANSPORT AND STRUCTURAL RELAXATIONS IN DISORDERED SOLIDS p. C4-171

W.W. Schmidt et K.G. Breitschwerdt

DOI: https://doi.org/10.1051/jphyscol:1981435

NON-OHMIC HOPPING CONDUCTION - A TREATMENT BY DIRECTED PERCOLATION THEORY p. C4-175

M. Van der Meer, R. Keiper et R. Schuchardt

DOI: https://doi.org/10.1051/jphyscol:1981436

PRESSURE-INDUCED TRANSITIONS IN AMORPHOUS SILICON AND GERMANIUM p. C4-181

S. Minomura

DOI: https://doi.org/10.1051/jphyscol:1981437

A NEW APPROACH OF AMORPHOUS SEMICONDUCTORS STRUCTURE USING CURVED SPACES p. C4-189

J.F. Sadoc et R. Mosseri

DOI: https://doi.org/10.1051/jphyscol:1981438

INTRINSICALLY BROKEN CHALCOGEN CHEMICAL ORDER IN STOICHIOMETRIC GLASSES p. C4-193

W.J. Bresser, P. Boolchand, P. Suranyi et J.P. de Neufville

DOI: https://doi.org/10.1051/jphyscol:1981439

DOMAIN MICROSCOPY IN CHALCOGENIDE ALLOY GLASS THIN FILMS p. C4-197

J.C. Phillips

DOI: https://doi.org/10.1051/jphyscol:1981440

BOND EQUILIBRIUM THEORY IN COVALENTLY BONDED ALLOYS p. C4-201

M. Cutler

DOI: https://doi.org/10.1051/jphyscol:1981441

THE THIRD LAW OF THERMODYNAMICS AND THE LOW TEMPERATURE PROPERTIES OF DISORDERED SOLIDS p. C4-205

R. Dandoloff et R. Zeyher

DOI: https://doi.org/10.1051/jphyscol:1981442

STRUCTURAL MODEL OF FLUORINATED AMORPHOUS-SILICON (a-Si : F) p. C4-209

H. Matsumura, K. Sakai, Y. Kawakyu et S. Furukawa

DOI: https://doi.org/10.1051/jphyscol:1981443

REFLECTION SAXS INVESTIGATION OF AMORPHOUS THIN FILMS p. C4-213

R. Manaila

DOI: https://doi.org/10.1051/jphyscol:1981444

STRUCTURAL ORDERING RELATED TO CHEMICAL BONDS IN RANDOM NETWORKS p. C4-217

A.G. Revesz, S.H. Wemple et G.V. Gibbs

DOI: https://doi.org/10.1051/jphyscol:1981445

EXAFS STUDIES ON THE LOCAL STRUCTURE IN AMORPHOUS GeS AND GeSe p. C4-221

H. Oyanagi, K. Tanaka, S. Hosoya et S. Minomura

DOI: https://doi.org/10.1051/jphyscol:1981446

SODIUM ENVIRONMENTS IN GLASS p. C4-225

G.N. Greaves

DOI: https://doi.org/10.1051/jphyscol:1981447

ON EFFICIENCY OF SCATTERING METHODS TO DETERMINE THE STRUCTURE OF DISORDERED MATERIALS p. C4-229

J. Slechta

DOI: https://doi.org/10.1051/jphyscol:1981448

X-RAY DIFFRACTION STUDY OF ATOMIC STRUCTURE OF PLASMA DEPOSITED a-Si:H ALLOYS p. C4-233

K. Tsuji et S. Minomura

DOI: https://doi.org/10.1051/jphyscol:1981449

DIFFRACTION STUDY OF THE a-Si:H STRUCTURE EVOLUTION DURING ANNEALING TREATMENTS PERFORMED DIRECTLY ON THE X RAY GONIOMETER p. C4-237

J. Dixmier, R. Mosseri et J.F. Sadoc

DOI: https://doi.org/10.1051/jphyscol:1981450

NETWORK DIMENSIONALITY OF AMORPHOUS GeS₂ : OPTICAL HIGH-PRESSURE EXPERIMENTS ON a-GeS₂, 2d-GeS₂, AND 3d-GeS₂ p. C4-241

R. Zallen, B.A. Weinstein et M.L. Slade

DOI: https://doi.org/10.1051/jphyscol:1981451

GROWTH SEQUENCE OF Si-CLUSTERS : FROM A FEW ATOMS TO THE AMORPHOUS PHASE p. C4-245

R. Mosseri et J.P. Gaspard

DOI: https://doi.org/10.1051/jphyscol:1981452

PARAMETERS CONTROLLING THE DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE SILICON IN Si/H DISCHARGE PLASMAS p. C4-251

S. vepŸek, Z. Iqbal, H.R. Oswald, F.A. Sarott et J.J. Wagner

DOI: https://doi.org/10.1051/jphyscol:1981453

ELECTRONIC PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW DISCHARGE PLASMA p. C4-257

W.E. Spear, G. Willeke, P.G. Le Comber et A.G. Fitzgerald

DOI: https://doi.org/10.1051/jphyscol:1981454

PHOTOEMISSION STUDIES OF THE TRANSITION FROM AMORPHOUS TO MICROCRYSTALLINE SILICON p. C4-261

H. Richter et L. Ley

DOI: https://doi.org/10.1051/jphyscol:1981455

PROPERTIES OF MICROCRYSTALLINE P-DOPED GLOW DISCHARGE Si:H FILMS p. C4-265

Y. Uchida, T. Ichimura, M. Ueno et M. Ohsawa

DOI: https://doi.org/10.1051/jphyscol:1981456

THE NATURE OF INTERMEDIATE RANGE ORDER IN Si:F:H:(P) ALLOY SYSTEMS p. C4-269

R. Tsu, S. S. Chao, M. Izu, S.R. Ovshinsky, G.J. Jan et F.H. Pollak

DOI: https://doi.org/10.1051/jphyscol:1981457

COMPUTER CALCULATION OF SCATTERING INTENSITY FOR DISORDERED MOLYBDENUM DISULFIDE p. C4-273

F.Z. Chien, S.C. Moss, K.S. Liang et R.R. Chianelli

DOI: https://doi.org/10.1051/jphyscol:1981458

Si-H VIBRATIONAL PROPERTIES IN CRYSTALLIZED HYDROGENATED SILICON FABRICATED BY REACTIVE SPUTTERING IN H₂ ATMOSPHERE p. C4-277

A. Hiraki, T. Imura, K. Mogi et M. Tashiro

DOI: https://doi.org/10.1051/jphyscol:1981459

LUMINESCENCE IN a-Si:H p. C4-283

R.A. Street

DOI: https://doi.org/10.1051/jphyscol:1981460

SUB-GAP AND BAND EDGE OPTICAL ABSORPTION IN a-Si:H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY p. C4-293

W.B. Jackson et N.M. Amer

DOI: https://doi.org/10.1051/jphyscol:1981461

ANNEALING STUDIES ON LOW OPTICAL ABSORPTION OF GD a-Si:H USING PHOTOACOUSTIC SPECTROSCOPY p. C4-297

S. Yamasaki, N. Hata, T. Yoshida, H. Oheda, A. Matsuda, H. Okushi et K. Tanaka

DOI: https://doi.org/10.1051/jphyscol:1981462

DISORDER AND THE OPTICAL ABSORPTION EDGE OF HYDROGENATED AMORPHOUS SILICON p. C4-301

G.D. Cody, T. Tiedje, B. Abeles, T.D. Moustakas, B. Brooks et Y. Goldstein

DOI: https://doi.org/10.1051/jphyscol:1981463

ENHANCEMENT OF THE PHOTOCURRENT SIGNAL IN a-Si:H BY MEAN OF A WAVEGUIDING TECHNIQUE, APPLICATION TO THE OPTICAL ABSORPTION SPECTROSCOPY BELOW THE BAND GAP p. C4-305

M. Olivier et P. Bouchut

DOI: https://doi.org/10.1051/jphyscol:1981464

FIRST OBSERVATIONS OF PHOTOCONDUCTIVITY IN BULK DOPED Ge_Y Se_1-Y GLASSES p. C4-309

J.M. Chamberlain et A.J. Moseley

DOI: https://doi.org/10.1051/jphyscol:1981465

LASER INDUCED OSCILLATORY PHENOMENA IN a-GeSe₂ FILMS p. C4-313

J. Hajtó et Füstöss-Wégner

DOI: https://doi.org/10.1051/jphyscol:1981466

ACTIVE AND PASSIVE STUDIES OF AMORPHOUS CHALCOGENIDE IR EMITTERS p. C4-317

P.J. Walsh, A. Jaafar, M.J. Thompson et D. Adler

DOI: https://doi.org/10.1051/jphyscol:1981467

OPTICALLY DETECTED MAGNETIC RESONANCE (ODMR) IN a-Si p. C4-323

S.P. Depinna, B.C. Cavenett, T.M. Searle et I.G. Austin

DOI: https://doi.org/10.1051/jphyscol:1981468

ELECTRON-BEAM INDUCED CENTERS IN HYDROGENATED AMORPHOUS SILICON p. C4-327

H. Schade et J.I. Pankove

DOI: https://doi.org/10.1051/jphyscol:1981469

A NO-STOKES SHIFT MODEL FOR THE PHOTOLUMINESCENCE OF a-Si:H p. C4-331

D. J. Dunstan et F. Boulitrop

DOI: https://doi.org/10.1051/jphyscol:1981470

DEFECT CREATION BY OPTICAL EXCITATION IN HYDROGENATED AMORPHOUS SILICON : TIME-RESOLVED LUMINESCENCE AND ODMR MEASUREMENTS p. C4-335

K. Morigaki, I. Hirabayashi, Y. Sano et S. Nitta

DOI: https://doi.org/10.1051/jphyscol:1981471

PHOTOLUMINESCENCE VERSUS BORON DOPING AND PREPARATION CONDITIONS p. C4-339

J.C. Bruyère et A. Deneuville

DOI: https://doi.org/10.1051/jphyscol:1981472

RADIATIVE RECOMBINATION OF LOCALIZED EXCITONS IN AMORPHOUS AND CRYSTALLINE As₂S₃ p. C4-343

K. Murayama et M.A. Bösch

DOI: https://doi.org/10.1051/jphyscol:1981473

INFRARED AND FAR INFRARED ABSORPTION OF B- AND P-DOPED AMORPHOUS Si p. C4-349

S.C. Shen et M. Cardona

DOI: https://doi.org/10.1051/jphyscol:1981474

PHONON DENSITIES OF STATES AND EIGENVECTORS IN HYDROGENATED AND FLUORINATED AMORPHOUS SILICON p. C4-353

W.B. Pollard et G. Lucovsky

DOI: https://doi.org/10.1051/jphyscol:1981475

ORDER PARAMETER IN THE GLASS TRANSITION OF VITREOUS S-Ge p. C4-357

H. Kawamura, K. Hattori, K. Matsunaga, Y. Akagi et A. Kawamori

DOI: https://doi.org/10.1051/jphyscol:1981476

INFRARED VIBRATIONAL SPECTRA OF CHLORINATED AND HYDROGENATED AMORPHOUS SILICON p. C4-361

S. Kalem, J. Chevallier, S. Al Dallal et J. Bourneix

DOI: https://doi.org/10.1051/jphyscol:1981477

STUDY OF DEFECTS IN a-Ge AND a-GeH_x USING SURFACE ACOUSTIC WAVE TECHNIQUE p. C4-365

K.L. Bhatia, M.v. Haumeder et S. Hunklinger

DOI: https://doi.org/10.1051/jphyscol:1981478

STUDY OF LIGHT INDUCED CHANGES IN a-Si:H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTS p. C4-371

J.D. Cohen, D.V. Lang, J.P. Harbison et A.M. Sergent

DOI: https://doi.org/10.1051/jphyscol:1981479

PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED a-Si:H p. C4-375

M.H. Tanielian, N.B. Goodman et H. Fritzsche

DOI: https://doi.org/10.1051/jphyscol:1981480

THE EFFECT OF ANNEALING AND ILLUMINATION ON THE FIELD EFFECT CONDUCTANCE OF AMORPHOUS SILICON p. C4-379

M.J. Powell, B.C. Easton et D.H. Nicholls

DOI: https://doi.org/10.1051/jphyscol:1981481

COMPARISON OF OPTICALLY INDUCED LOCALIZED STATES IN CHALCOGENIDE GLASSES AND THEIR CRYSTALLINE COUNTERPARTS p. C4-383

S.G. Bishop, B.V. Shanabrook, U. Strom et P.C. Taylor

DOI: https://doi.org/10.1051/jphyscol:1981482

PHOTO-INDUCED E.S.R. IN GLASSY SULPHUR p. C4-387

S.R. Elliott

DOI: https://doi.org/10.1051/jphyscol:1981483

STRUCTURAL MODELLING OF REVERSIBLE PHOTODARKENING IN a^-As_xSe p. C4-391

R. Grigorovici et A. Vancu

DOI: https://doi.org/10.1051/jphyscol:1981484

LASER-INDUCED METASTABLE STATES IN AMORPHOUS SEMICONDUCTORS p. C4-395

M. Wautelet, R. Andrew, M. Failly-Lovato et L.D. Laude

DOI: https://doi.org/10.1051/jphyscol:1981485

DETAILED TEMPERATURE-CYCLING STUDIES OF PHOTOSTRUCTURAL CHANGE IN a^-As₂S₃ p. C4-399

H. Hamanaka, K. Tanaka, K. Tsuji et S. Minomura

DOI: https://doi.org/10.1051/jphyscol:1981486

EXISTENCE OF IRREVERSIBILITY IN STAEBLER-WRONSKI EFFECT AND FATIGUE EFFECT OF PHOTOLUMINESCENCE OF GDa-Si : H p. C4-403

S. Nitta, Y. Takahashi et M. Noda

DOI: https://doi.org/10.1051/jphyscol:1981487

LIGHT-INDUCED CHANGES IN a-Si : H ANALYSED BY FIELD EFFECT MEASUREMENTS p. C4-407

T . Stoica

DOI: https://doi.org/10.1051/jphyscol:1981488

ELECTRONIC PROPERTIES OF a-Si : H FROM MEASUREMENTS ON DEVICES p. C4-413

R.S. Crandall

DOI: https://doi.org/10.1051/jphyscol:1981489

APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS p. C4-423

P.G. Le Comber, A.J. Snell, K.D. Mackenzie et W.E. Spear

DOI: https://doi.org/10.1051/jphyscol:1981490

GEMINATE AND NON-GEMINATE RECOMBINATION IN AMORPHOUS SEMICONDUCTORS p. C4-433

J. Mort

DOI: https://doi.org/10.1051/jphyscol:1981491

XEROGRAPHIC SPECTROSCOPY OF LOCALIZED ELECTRONIC STATES IN AMORPHOUS SEMICONDUCTORS p. C4-443

M. Abkowitz et R.C. Enck

DOI: https://doi.org/10.1051/jphyscol:1981492

OBSERVATION OF ACOUSTIC EMISSION FROM a-Si : H PIN JUNCTIONS p. C4-447

Y. Mishima, M. Hirose, I. Suemune, M. Yamanishi et Y. Osaka

DOI: https://doi.org/10.1051/jphyscol:1981493

DETERMINATION OF MIDGAP DENSITY OF STATES IN a-Si : H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS p. C4-451

W. den Boer

DOI: https://doi.org/10.1051/jphyscol:1981494

DENSITY OF STATES STUDY IN SPUTTERED a-Si : H : EFFECT OF IMPURITIES AND H RELATED DEFECTS p. C4-455

P. Viktorovitch, G. Moddel, J. Blake, S. Oguz, R.L. Weisfield et W. Paul

DOI: https://doi.org/10.1051/jphyscol:1981495

FUNDAMENTAL TUNNELING PROCESSES IN MOS_a SOLAR CELLS p. C4-459

I. Balberg, J.J. Hanak, H.A. Weakliem et E. Gal

DOI: https://doi.org/10.1051/jphyscol:1981496

HIGH EFFICIENCY, LARGE-AREA PHOTOVOLTAIC DEVICES USING AMORPHOUS Si : F : H ALLOY p. C4-463

A. Madan, W. Czubatyj, J. Yang, J. McGill et S.R. Ovshinsky

DOI: https://doi.org/10.1051/jphyscol:1981497

INJECTION LUMINESCENCE IN AMORPHOUS SILICON p⁺-i-n⁺ JUNCTIONS p. C4-467

T.S. Nashashibi, I.G. Austin, T.M. Searle, R.A. Gibson, P.G. LeComber et W.E. Spear

DOI: https://doi.org/10.1051/jphyscol:1981498

VALENCY ELECTRON CONTROL IN A GLOW DISCHARGE PRODUCED a-SiC : H AND ITS APPLICATION TO a-Si SOLAR CELL p. C4-471

Y. Tawada, M. Kondo, H. Okamoto et Y. Hamakawa

DOI: https://doi.org/10.1051/jphyscol:1981499

CORRELATION OF ELECTRICAL PROPERTIES OF a-SiH_x MIS SOLAR CELL STRUCTURES WITH THE STATE OF OXIDATION OF THE INTERFACE p. C4-475

C.R. Wronski, Y. Goldstein, S. Kelemen, B. Abeles et H. Witzke

DOI: https://doi.org/10.1051/jphyscol:19814100

INTERACTION OF ULTRASONIC PHONONS WITH DONOR IMPURITIES IN HYDROGENATED AMORPHOUS GERMANIUM p. C4-479

K.L. Bhatia et S. Hunklinger

DOI: https://doi.org/10.1051/jphyscol:19814101

TANDEM TYPE SOLAR CELLS USING a-Si : H AND a-SiGe : H FILMS p. C4-483

G. Nakamura, K. Sato, H. Kondo, Y. Yukimoto et K. Shirahata

DOI: https://doi.org/10.1051/jphyscol:19814102

ELECTRON TRANSPORT IN HYDROGENATED AMORPHOUS SILICON SCHOTTKY BARRIERS AND DEEP LOCALIZED STATES KINETICS p. C4-487

S. Deleonibus et D. Jousse

DOI: https://doi.org/10.1051/jphyscol:19814103

MINORITY CARRIER TRANSPORT IN DEPLETION LAYERS OF n-i-p a-Si : H SOLAR CELLS p. C4-491

V. Dalal et F. Alvarez

DOI: https://doi.org/10.1051/jphyscol:19814104

PHOTOELECTRIC PROPERTIES OF GD a-Si : H MONOLAYER FILMS FOR ELECTROPHOTOGRAPHIC APPLICATIONS p. C4-495

N. Yamamoto, K. Wakita, Y. Nakayama et T. Kawamura

DOI: https://doi.org/10.1051/jphyscol:19814105

THEORETICAL ANALYSES OF a-Si : H DIODE CHARACTERISTICS p. C4-499

I. Chen et S. Lee

DOI: https://doi.org/10.1051/jphyscol:19814106

CHARGE CENTROID DETERMINATION IN FIELD-EFFECT EXPERIMENTS p. C4-503

S.D. Senturia, J. Rubinstein, S.J. Azoury et D. Adler

DOI: https://doi.org/10.1051/jphyscol:19814107

DRIFT TYPE PHOTOVOLTAIC EFFECT IN a-Si p-i-n JUNCTION p. C4-507

H. Okamoto, T. Yamaguchi, S. Nonomura et Y. Hamakawa

DOI: https://doi.org/10.1051/jphyscol:19814108

A STUDY OF A NEW HETEROJUNCTION MADE OF n-TYPE SILICON AND p-TYPE AMORPHOUS SEMICONDUCTOR p. C4-511

Y. Sawan, M. El-Gabaly, F. Wakim et S. Atari

DOI: https://doi.org/10.1051/jphyscol:19814109

DOPING EFFECTS IN TRANSPORT PROPERTIES IN a-Si p-n JUNCTIONS p. C4-515

Wu Zhong Yan, Y. Marfaing et J. Dixmier

DOI: https://doi.org/10.1051/jphyscol:19814110

CURRENT PATH IN AMORPHOUS-SILICON FIELD EFFECT TRANSISTORS p. C4-519

M. Matsumura, S.I. Kuno et Y. Uchida

DOI: https://doi.org/10.1051/jphyscol:19814111

FIELD EFFECT STUDIES ON a-Si:H FILMS p. C4-523

M. Grünewald, K. Weber, W. Fuhs et P. Thomas

DOI: https://doi.org/10.1051/jphyscol:19814112

PHOTOVOLTAIC EFFECT IN INTERSTITIALLY DOPED a-Si:H p. C4-527

S. Kumar et S.C. Agarwal

DOI: https://doi.org/10.1051/jphyscol:19814113

TIME RESOLVED OPTICAL SPECTROSCOPY IN AMORPHOUS SILICON AND CHALCOGENIDES p. C4-533

J. Shah

DOI: https://doi.org/10.1051/jphyscol:19814114

TEMPORAL DECAY OF THE OPTICALLY INDUCED PROPERTIES OF A SMALL-POLARONIC SOLID p. C4-535

D. Emin

DOI: https://doi.org/10.1051/jphyscol:19814115

PICOSECOND DYNAMICS OF CARRIERS IN AMORPHOUS SEMICONDUCTORS p. C4-539

Z. Vardeny, J. Tauc et C.J. Fang

DOI: https://doi.org/10.1051/jphyscol:19814116

PHOTOLUMINESCENCE DECAY IN a-Si : INFLUENCE OF EXCITATION DENSITY AND n-TYPE DOPING p. C4-543

W. Czaja et S. Kinmond

DOI: https://doi.org/10.1051/jphyscol:19814117

RECOMBINATION IN DISORDERED SOLIDS p. C4-547

H. Scher

DOI: https://doi.org/10.1051/jphyscol:19814118

RECOMBINATION OF PHOTOGENERATED CARRIERS IN DOPED HYDROGENATED AMORPHOUS SILICON p. C4-551

J.M. Hvam et M.H. Brodsky

DOI: https://doi.org/10.1051/jphyscol:19814119

TIME RESOLVED SPECTROSCOPY OF THE PHOTOINDUCED ABSORPTION IN GLOW-DISCHARGE a-Si:H p. C4-555

S. Ray, Z. Vardeny et J. Tauc

DOI: https://doi.org/10.1051/jphyscol:19814120

DENSITY OF STATES IN THE GAP OF a-As₂Se₃ BY PHOTOCURRENT TRANSIENT SPECTROSCOPY p. C4-559

D. Monroe, J. Orenstein et M. Kastner

DOI: https://doi.org/10.1051/jphyscol:19814121

TRANSIENT PHOTOCONDUCTIVITY AND SCHOTTKY BARRIER PROFILE DETERMINATION IN a-Si:H p. C4-563

T. Datta et M. Silver

DOI: https://doi.org/10.1051/jphyscol:19814122

PRIMARY AND SECONDARY PHOTOCURRENTS IN n-TYPE AND p-TYPE a-Si:H FILMS p. C4-567

H.M. Welsch, W. Fuhs, K.H. Greeb et H. Mell

DOI: https://doi.org/10.1051/jphyscol:19814123

TIME-RESOLVED LUMINESCENCE MEASUREMENTS ON AMORPHOUS PHOSPHORUS p. C4-571

G. Fasol et E.A. Davis

DOI: https://doi.org/10.1051/jphyscol:19814124

PHOTOCONDUCTIVITY AND RELATED MEASUREMENTS OF THE CONDUCTION BAND TAIL IN a-Si:H p. C4-575

R.A. Street

DOI: https://doi.org/10.1051/jphyscol:19814125

HIGH-SPEED TRANSIENT EFFECTS IN CHALCOGENIDE GLASSES p. C4-579

T. Shiraishi et D. Adler

DOI: https://doi.org/10.1051/jphyscol:19814126

NON-DISPERSIVE AND DISPERSIVE TRANSPORT IN AMORPHOUS GERMANIUM SELENIDE AND HYDROGENATED SILICON p. C4-583

J. Shirafuji, G.I. Kim, H. Matsui, M. Inoue, K. Yoshino et Y. Inuishi

DOI: https://doi.org/10.1051/jphyscol:19814127

RECOMBINATION PROCESSES AND GAP STATES IN HYDROGENATED AMORPHOUS SILICON AS ELUCIDATED BY TIME-RESOLVED LUMINESCENCE MEASUREMENTS p. C4-587

I. Hirabayashi, K. Morigaki et S. Nitta

DOI: https://doi.org/10.1051/jphyscol:19814128

TIME RESOLVED PHOTOLUMINESCENCE SPECTRA OF SPUTTERED a-Si:H p. C4-591

R.W. Collins et W. Paul

DOI: https://doi.org/10.1051/jphyscol:19814129

DUAL LIGHT BEAM MODULATION OF PHOTOCARRIER LIFETIME IN INTRINSIC a-Si:H p. C4-597

P.D. Persans et H. Fritzsche

DOI: https://doi.org/10.1051/jphyscol:19814130

OPTICAL DLTS MEASUREMENTS OF LOCALIZED STATES IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORS p. C4-601

M. Okuda, H. Naito, H. Nakayama et T. Nakau

DOI: https://doi.org/10.1051/jphyscol:19814131

THERMAL AND OPTICAL SPACE CHARGE SPECTROSCOPY OF GAP STATES IN a-Si:H p. C4-605

A. Chenevas-Paule et J. Dijon

DOI: https://doi.org/10.1051/jphyscol:19814132

PHOTORESPONSE TIME AND DENSITY OF LOCALIZED STATES IN THE MOBILITY GAP OF a-Si:H ALLOYS PREPARED BY R.F. GLOW DISCHARGE p. C4-609

L. Guimarães, R. Martins et A.G. Dias

DOI: https://doi.org/10.1051/jphyscol:19814133

ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY : ITS APPLICATION TO THE STUDY OF GAP STATES OF a-Si:H p. C4-613

H. Okushi, Y. Tokumaru, S. Yamasaki, H. Oheda et K. Tanaka

DOI: https://doi.org/10.1051/jphyscol:19814134

MEASUREMENT AND ANALYSIS OF CURRENT TRANSIENTS IN WELL-CHARACTERIZED a-Si:H p. C4-617

M.J. Thompson, N.M. Johnson et R.A. Street

DOI: https://doi.org/10.1051/jphyscol:19814135

PROPERTIES OF PURE SILICON AMORPHOUS FILMS PREPARED BY rf-BIAS SPUTTERING p. C4-623

M. Suzuki, T. Maekawa, Y. Kakimoto et T. Bandow

DOI: https://doi.org/10.1051/jphyscol:19814136

PREPARATION AND PROPERTIES OF ION BEAM DEPOSITED a-SiH_x p. C4-627

G.P. Ceasar, K. Okumura et S.F. Grimshaw

DOI: https://doi.org/10.1051/jphyscol:19814137

EFFECTS OF THE SUBSTRATE POTENTIAL ON THE INCORPORATION MANNER OF HYDROGEN AND IMPURITY IN a-Si : H FILMS p. C4-631

S. Hotta, Y. Tawada, H. Okamoto et Y. Hamakawa

DOI: https://doi.org/10.1051/jphyscol:19814138

DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD p. C4-635

B.A. Scott, R.M. Plecenik et E.E. Simonyi

DOI: https://doi.org/10.1051/jphyscol:19814139

THETA-PINCH PLASMA HYDROGENATION OF EVAPORATED AMORPHOUS SILICON FILMS p. C4-639

P.K. John, S.K. Wong, P.K. Gogna, B.Y. Tong et K.P. Chik

DOI: https://doi.org/10.1051/jphyscol:19814140

GLOW-DISCHARGE a-Si : F PREPARED FROM SiF₂ GAS p. C4-643

R. Weil, M. Janai, B. Pratt, K. Levin et F. Moser

DOI: https://doi.org/10.1051/jphyscol:19814141

A NEW TYPE OF a-Si PREPARED BY dc SPUTTERING : P, B AND H DOPING EFFECT p. C4-647

Nguyen Van dong, Y. Fournier et J.Y. Le Ny

DOI: https://doi.org/10.1051/jphyscol:19814142

PREPARATION AND PROPERTIES OF POLYSILANES : MODEL COMPOUNDS FOR HYDROGENATED a-Si p. C4-651

P. John, I.M. Odeh, M.J.K. Thomas et J.I.B. Wilson

DOI: https://doi.org/10.1051/jphyscol:19814143

EFFECT OF TEMPERATURE ON OPTICAL PROPERTIES OF GLOW DISCHARGE HYDROGENATED AMORPHOUS SILICON FILMS p. C4-655

A. Donnadieu, B. Yous, J.M. Berger, J.P. Ferraton et J. Robin

DOI: https://doi.org/10.1051/jphyscol:19814144

R.F. MAGNETRON SPUTTERING OF a-Si : H p. C4-659

A.R. Mirza, A.J. Rhodes, J. Allison et M.J. Thompson

DOI: https://doi.org/10.1051/jphyscol:19814145

ELECTRICAL PROPERTIES AND PHOTOLUMINESCENCE OF AMORPHOUS SILICON p. C4-663

X.B. Liao, G.L. Kong, X.R. Yang, P.D. Wang, Y.Q. Chao, Z.M. Chen et C.L. Liu

DOI: https://doi.org/10.1051/jphyscol:19814146

NEW AMORPHOUS ALLOY SEMICONDUCTORS : a-Si_1-xSn_x p. C4-667

C. Vérié, J.F. Rochette et J.P. Rebouillat

DOI: https://doi.org/10.1051/jphyscol:19814147

LARGE-AREA DEPOSITION OF AMORPHOUS-SILICON p. C4-671

M. Matsumura et Y. Uchida

DOI: https://doi.org/10.1051/jphyscol:19814148

RF POWER AND TEMPERATURE DEPENDENCES IN GD a-Si PRODUCED FROM HEATED SiH₄ p. C4-675

S. Hasegawa, Y. Kurata, Y. Imai et S. Narikawa

DOI: https://doi.org/10.1051/jphyscol:19814149

INFERIOR ELECTRONIC PROPERTIES OF RF-SPUTTERED a-Si : H FILMS WITH ONLY THE 2000-cm^-1 IR ABSORPTION BAND p. C4-679

S. Oguz, D.K. Paul, J. Blake, R.W. Collins, A. Lachter, B.G. Yacobi et W. Paul

DOI: https://doi.org/10.1051/jphyscol:19814150

INFLUENCE OF HYDROGEN PARTIAL PRESSURE ON DEPOSITION AND PROPERTIES OF SPUTTERED AMORPHOUS GALLIUM ARSENIDE p. C4-683

L. Alimoussa, H. Carchano et J.P. Thomas

DOI: https://doi.org/10.1051/jphyscol:19814151

A SIMPLIFIED MODEL FOR THE DEPOSITION KINETICS OF GD a-Si : H FILMS p. C4-687

A. Matsuda, M. Matsumura, K. Nakagawa, S. Yamasaki et K. Tanaka

DOI: https://doi.org/10.1051/jphyscol:19814152

STABLE AMORPHOUS GERMANIUM FILMS PREPARED IN ULTRA HIGH VACUUM AND MEASURED IN-SITU : STRUCTURE AND ELECTRONIC PROPERTIES p. C4-691

P. Viščor et A.D. Yoffe

DOI: https://doi.org/10.1051/jphyscol:19814153

THE ENHANCEMENT OF THE DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY OF GD a-Si INTRODUCING O₂, N₂ p. C4-695

Wen Yuan Xu, Zhong Lin Sun, Zhong Pang Wang et De Lin Lee

DOI: https://doi.org/10.1051/jphyscol:19814154

PLASMA-DEPOSITED HYDROGENATED CHALCOGENIDE GLASSES p. C4-699

H. Fritzsche, V. Šmíd, H. Ugur et P.J. Gaczi

DOI: https://doi.org/10.1051/jphyscol:19814155

PHYSICAL PROPERTIES OF AMORPHOUS CVD SILICON p. C4-705

M. Hirose

DOI: https://doi.org/10.1051/jphyscol:19814156

NMR INVESTIGATIONS OF HYDROGENATED AMORPHOUS SILICON p. C4-715

J.A. Reimer

DOI: https://doi.org/10.1051/jphyscol:19814157

HIGH TEMPERATURE ¹H NMR IN a-Si : H p. C4-725

W.E. Carlos et P.C. Taylor

DOI: https://doi.org/10.1051/jphyscol:19814158

NMR AND ESR STUDIES ON ANNEALING EFFECTS IN a-Si : F : H AND a-Si : H p. C4-729

S. Ueda, M. Kumeda et T. Shimizu

DOI: https://doi.org/10.1051/jphyscol:19814159

MULTIPHASES DESCRIPTION OF a-Si : H p. C4-733

A. Deneuville, J.C. Bruyère et H. Hamdi

DOI: https://doi.org/10.1051/jphyscol:19814160

EFFECT OF HYDROGENATION ON DOPED a-Si PREPARED BY CVD p. C4-737

J. Magarino, A. Friederich, D. Kaplan et A. Deneuville

DOI: https://doi.org/10.1051/jphyscol:19814161

CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS SILICON p. C4-741

G. Lucovsky

DOI: https://doi.org/10.1051/jphyscol:19814162

THEORY OF DOPANT LEVEL DEPTHS IN a-Si p. C4-745

J. Robertson

DOI: https://doi.org/10.1051/jphyscol:19814163

IMPERFECT AMORPHOUS SOLID AND BIPOLARONIC GROUND-STATE p. C4-749

B.K. Chakraverty

DOI: https://doi.org/10.1051/jphyscol:19814164

SURFACE PROPERTIES OF a-Si : H AND a-Si : F INVESTIGATED BY PHOTOELECTRON SPECTROSCOPY p. C4-753

L. Ley, H. Richter, R. Kärcher, R.L. Johnson et J. Reichardt

DOI: https://doi.org/10.1051/jphyscol:19814165

ELECTROREFLECTANCE STUDY OF ELECTRONIC STRUCTURE IN a-Si : H p. C4-761

S. Nonomura, H. Okamoto, T. Nishino et Y. Hamakawa

DOI: https://doi.org/10.1051/jphyscol:19814166

DENSITY OF STATES OF AMORPHOUS HYDROGENATED Si p. C4-765

P. Lemaire et J.P. Gaspard

DOI: https://doi.org/10.1051/jphyscol:19814167

CALCULATIONS OF TRANSPORT PROPERTIES IN a-Si : H p. C4-769

W.E. Pickett, D.A. Papaconstantopoulos et E.N. Economou

DOI: https://doi.org/10.1051/jphyscol:19814168

BONDING IN HYDROGENATED AMORPHOUS SILICON p. C4-773

H.R. Shanks, F.R. Jeffrey et M.E. Lowry

DOI: https://doi.org/10.1051/jphyscol:19814169

HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS p. C4-779

F.J. Demond, G. Müller, H. Damjantschitsch, H. Mannsperger, S. Kalbitzer, P.G. Le Comber et W.E. Spear

DOI: https://doi.org/10.1051/jphyscol:19814170

HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS SILICON FILMS p. C4-783

W. Beyer et H. Wagner

DOI: https://doi.org/10.1051/jphyscol:19814171

CHEMICAL SITES OF RARE GAS ATOMS IN AMORPHOUS SILICON p. C4-787

Y. Katayama, T. Shimada, K. Usami et E. Maruyama

DOI: https://doi.org/10.1051/jphyscol:19814172

EFFECTS OF ARGON ON THE PROPERTIES OF RF SPUTTERED AMORPHOUS SILICON p. C4-791

Peng Shao-qi, Yu Bing Qai, Zhang Pei Xian et Ye Xian Jing

DOI: https://doi.org/10.1051/jphyscol:19814173

NUCLEAR SCATTERING MEASUREMENTS OF COMPOSITION PROFILES IN a-Si : H MULTILAYER STRUCTURES p. C4-795

C. Brassard, R. Groleau, J. L'Ecuyer, J.P. Martin, J.F. Currie, P. Depelsenaire, M. Wertheimer et A. Yelon

DOI: https://doi.org/10.1051/jphyscol:19814174

INTERACTION BETWEEN ARGON AND DOPANTS IN SPUTTERED a-Si : H p. C4-799

M. Toulemonde, J.J. Grob, J.C. Bruyère, A. Deneuville, H. Hamdi et P. Siffert

DOI: https://doi.org/10.1051/jphyscol:19814175

ELECTRON IRRADIATION IN AMORPHOUS HYDROGENATED SILICON p. C4-803

R.V. Navkhandewala, K.L. Narasimhan et S. Guha

DOI: https://doi.org/10.1051/jphyscol:19814176

PLASMA DIAGNOSTIC DURING THE GROWTH OF a-Si : H p. C4-807

T. Hamasaki, M. Hirose et Y. Osaka

DOI: https://doi.org/10.1051/jphyscol:19814177

ANNEALING AND HYDROGENATION BEHAVIOUR OF EVAPORATED AND SPUTTERED HIGH-PURITY AMORPHOUS SILICON FILMS p. C4-811

N. Kniffler, W.W. Müller, J.M. Pirrung, N. Hänisch, B. Schröder et J. Geiger

DOI: https://doi.org/10.1051/jphyscol:19814178

A THEORETICAL STUDY OF HYDROGEN EXODIFFUSION IN a-Si : H, COMPARISON WITH CONDUCTIVITY MEASUREMENTS p. C4-815

K. Zellama, P. Germain, C. Picard et B. Bourdon

DOI: https://doi.org/10.1051/jphyscol:19814179

DARK- AND PHOTOCONDUCTIVITY OF COMPENSATED a-Si : H p. C4-819

B. Hoheisel, R. Fischer et J. Stuke

DOI: https://doi.org/10.1051/jphyscol:19814180

APPLICATION OF THE MOLECULAR ORBITAL SELF-CONSISTENT-FIELD METHOD TO THE STUDY OF a-Si p. C4-823

L.E. Sansores, E.A. Cetina et J. Tagueña-Martínez

DOI: https://doi.org/10.1051/jphyscol:19814181

INFLUENCE OF CORRELATION EFFECTS ON THE ELECTRONIC PROPERTIES OF AMORPHOUS SILICON p. C4-827

L. Schweitzer, M. Grünewald et H. Dersch

DOI: https://doi.org/10.1051/jphyscol:19814182

INVESTIGATION INTO THE CONDUCTION MECHANISM OF CVD AMORPHOUS AND POLYCRYSTALLINE SILICON FILMS p. C4-831

Yu-liang He et Hsiang-na Liu

DOI: https://doi.org/10.1051/jphyscol:19814183

TEMPERATURE AND FREQUENCY DEPENDENCES OF NMR SPIN-LATTICE RELAXATION TIME T₁ IN a-Si : H p. C4-835

K.L. Ngai

DOI: https://doi.org/10.1051/jphyscol:19814184

HIGH RESOLUTION NMR OF ²⁹Si IN AMORPHOUS HYDROGENATED SILICON p. C4-839

B. Lamotte, A. Rousseau et A. Chenevas-Paule

DOI: https://doi.org/10.1051/jphyscol:19814185

THE DIFFUSION OF HEAVY ALKALI ATOMS IN AMORPHOUS SILICON p. C4-843

M. Reinelt et S. Kalbitzer

DOI: https://doi.org/10.1051/jphyscol:19814186

PHOTOLUMINESCENCE STUDIES ON a-Si : H : Cl FILMS p. C4-849

F. Evangelisti, P. Fiorini, G. Fortunato, A. Frova, G. Bruno, P. Capezzuto et F. Cramarossa

DOI: https://doi.org/10.1051/jphyscol:19814187

REVIEW OF GROUP-V AMORPHOUS SEMICONDUCTORS p. C4-855

E.A. Davis

DOI: https://doi.org/10.1051/jphyscol:19814188

PHOTOLUMINESCENCE AND ESR STUDIES OF LOCALIZED STATES IN AMORPHOUS PHOSPHORUS p. C4-865

B.V. Shanabrook, S.G. Bishop et P.C. Taylor

DOI: https://doi.org/10.1051/jphyscol:19814189

ELECTRICAL AND OPTICAL PROPERTIES OF UHV SUBLIMED a-As p. C4-869

R.T. Phillips, A.J. Mackintosh et A.D. Yoffe

DOI: https://doi.org/10.1051/jphyscol:19814190

OPTICAL ABSORPTION AND STRUCTURAL ORDER IN SPUTTERED AMORPHOUS PHOSPHORUS p. C4-873

R.J. Pomian, L.J. Pilione et J.S. Lannin

DOI: https://doi.org/10.1051/jphyscol:19814191

DISORDER EFFECTS ON GaP CORE LEVELS STUDIED BY ELECTRON SPECTROSCOPIES p. C4-877

G. Dufour, E. Belin, C. Senemaud, A. Gheorghiu et M.L. Theye

DOI: https://doi.org/10.1051/jphyscol:19814192

ELECTRONIC PROPERTIES OF FLASH-EVAPORATED AMORPHOUS GaSb FILMS p. C4-881

A. Gheorghiu, T. Rappeneau,, J.P. Dupin et M.L. Theye

DOI: https://doi.org/10.1051/jphyscol:19814193

STUDIES OF CHALCOGENIDE VITREOUS SEMICONDUCTORS IN THE IOFFE PHYSICOTECHNICAL INSTITUTE p. C4-887

B.T. Kolomiets

DOI: https://doi.org/10.1051/jphyscol:19814194

SILVER-DOPED AMORPHOUS As₂Se₃ FILMS STUDIED BY XPS p. C4-899

T. Ueno et A. Odajima

DOI: https://doi.org/10.1051/jphyscol:19814195

LASER-RAMAN STUDY OF THE STRUCTURE OF SILVER DOPED As₄₀S₆₀ GLASS p. C4-903

A.P. Firth, A.E. Owen et P.J. Ewen

DOI: https://doi.org/10.1051/jphyscol:19814196

DOPING OF CHALCOGENIDE GLASSES IN THE Ge-Se AND Ge-Te SYSTEMS p. C4-907

P. Nagels, M. Rotti et S. Vikhrov

DOI: https://doi.org/10.1051/jphyscol:19814197

PHOTO AND ELECTROCHEMICAL DOPING IN Ge-BASED CHALCOGENIDES p. C4-911

S. Rajagopalan, K. Solomon Harshavardhan, Bhanwar Singh et K.L. Chopra

DOI: https://doi.org/10.1051/jphyscol:19814198

RADIATION-INDUCED DEFECTS FORMATION IN CHALCOGENIDE GLASSES p. C4-915

Sh.Sh. Sarsembinov, E.E. Abdulgafarov et K. Tolkanchinov

DOI: https://doi.org/10.1051/jphyscol:19814199

POLARIZED LIGHT ELECTROABSORPTION ANISOTROPY OF VITREOUS CHALCOGENIDE SEMICONDUCTORS p. C4-919

B.L. Gelmont, B.T. Kolomiets, T.F. Mazets et S.K. Pavlov

DOI: https://doi.org/10.1051/jphyscol:19814200

FARADAY ROTATION IN a-As₂Se₃ p. C4-923

B. Vanhuyse, P. Van den Keybus et W. Grevendonk

DOI: https://doi.org/10.1051/jphyscol:19814201

AC CONDUCTIVITY OF AMORPHOUS As-Se-Ag SYSTEM p. C4-927

M. Kitao, K. Hirata et S. Yamada

DOI: https://doi.org/10.1051/jphyscol:19814202

HARDNESS AND THERMAL CONDUCTIVITY OF As-Se-Te CHALCOGENIDE GLASSES p. C4-931

M.F. Kotkata et M.B. El-den

DOI: https://doi.org/10.1051/jphyscol:19814203

EVIDENCE FOR CHARGED DEFECTS IN CHALCOGENIDES FROM HIGH FIELD CONDUCTIVITY p. C4-935

A. Feltz, H. Kahnt et F. Schirrmeister

DOI: https://doi.org/10.1051/jphyscol:19814204

ISOTHERMAL RELAXATION CURRENTS IN ARSENIC CHALCOGENIDES p. C4-939

G.J. Adriaenssens, H. Michiel et H. Hammam

DOI: https://doi.org/10.1051/jphyscol:19814205

AMORPHOUS SEMICONDUCTING Ag-Te FILMS p. C4-943

J.J. Hauser

DOI: https://doi.org/10.1051/jphyscol:19814206

CRYSTALLIZATION OF AMORPHOUS Se FILMS p. C4-947

G. Fleury, C. Viger, C. Vautier et C. Lhermitte

DOI: https://doi.org/10.1051/jphyscol:19814207

RADIAL DISTRIBUTION FUNCTION STUDIES OF GLASSY GERMANIUM-SILVER-CHALCOGEN ALLOYS p. C4-951

L.C. Bourne, S.C. Rowland et A. Bienenstock

DOI: https://doi.org/10.1051/jphyscol:19814208

ULTRASONIC STUDIES OF THE POLYMER STRUCTURE OF THE CHALCOGENIDE GLASSES p. C4-955

V.A. Ratobylskaja et L.A. Simonova

DOI: https://doi.org/10.1051/jphyscol:19814209

CONTACT EFFECTS OF METALS ON CHALCOGENIDE AMORPHOUS FILMS p. C4-959

S. Okano, M. Suzuki et H. Suzuki

DOI: https://doi.org/10.1051/jphyscol:19814210

EFFECT OF COMPOSITION AND STRUCTURE ON TRANSPORT PROPERTIES OF CHALCOGENIDE GLASSES p. C4-963

A.M. Andriesh, V.S. Gerasimenko, Yu.N. Ivaschenko, M.A. Iovu, M.S. Iovu, A.V. Mironos, V.L. Smirnov, M.R. Chernii et S.D. Shutov

DOI: https://doi.org/10.1051/jphyscol:19814211

ARSENIC SULPHIDE AS EVAPORATED DRY PHOTORESIST p. C4-967

A. Buroff

DOI: https://doi.org/10.1051/jphyscol:19814212

A NEW CHALCOGENIDE PHOTOCONDUCTOR FOR A DIODE LASER BEAM PRINTER p. C4-971

Y. Taniguchi, H. Yamamoto, S. Horigome, S. Saito et E. Maruyam

DOI: https://doi.org/10.1051/jphyscol:19814213

DIFFUSION KINETICS IN GOLD-AMORPHOUS GeTe₄ THIN FILMS p. C4-975

J.M. Mackowski, M. Bendali, P. Normandon et P. Kumurdjian

DOI: https://doi.org/10.1051/jphyscol:19814214

AMORPHOUS TRANSITION METAL OXIDES p. C4-981

J. Livage

DOI: https://doi.org/10.1051/jphyscol:19814215

VANADATE SEMICONDUCTING GLASSES DOPED WITH OXIDES OF OTHER TRANSITION METALS p. C4-993

L.D. Bogomolova, V.A. Jachkin, M.P. Glassova et S.N. Spasibkina

DOI: https://doi.org/10.1051/jphyscol:19814216

AMORPHOUS VANADIUM OXIDES BY CVD : PREPARATION, ELECTRICAL AND MAGNETIC PROPERTIES p. C4-997

T. Szörényi, K. Bali et I. Hevesi

DOI: https://doi.org/10.1051/jphyscol:19814217

ELECTRON SPIN-LATTICE RELAXATION : A TOOL FOR THE INVESTIGATION OF PARAMAGNETIC CENTERS IN AMORPHOUS SEMI-CONDUCTORS p. C4-1001

A. Deville, B. Gaillard, C. Blanchard et J. Livage

DOI: https://doi.org/10.1051/jphyscol:19814218

THE ELECTRONIC AND OPTICAL PROPERTIES OF VANADIUM TELLURITE GLASSES p. C4-1005

B.W. Flynn et A.E. Owen

DOI: https://doi.org/10.1051/jphyscol:19814219

ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS TIN OXIDE p. C4-1009

I. Chambouleyron, C. Constantino, D. Jousse, R. Assumpção et R. Brenzikofer.

DOI: https://doi.org/10.1051/jphyscol:19814220

CORRELATION BETWEEN CONDUCTIVITY, ELECTRON SPIN RESONANCE AND OPTICAL ABSORPTION IN RF SPUTTERED SiO₂ FILMS p. C4-1013

M. Meaudre, R. Meaudre, J. Tardy et B. Tribollet

DOI: https://doi.org/10.1051/jphyscol:19814221

THERMOELASTIC EFFECTS IN VITREOUS SILICA p. C4-1017

O.B. Wright et W.A. Phillips

DOI: https://doi.org/10.1051/jphyscol:19814222

ELECTRONIC STRUCTURE OF AMORPHOUS SiO_x p. C4-1021

E. Martínez et F. Ynduráin

DOI: https://doi.org/10.1051/jphyscol:19814223

THE BAND GAP OF GLOW-DISCHARGE-PRODUCED AMORPHOUS SiO_x p. C4-1025

R. Carius, R. Fischer et E. Holzenkämpfer

DOI: https://doi.org/10.1051/jphyscol:19814224

LUMINESCENCE IN PLASMA DEPOSITED AMORPHOUS Si_xC_1-x ALLOYS p. C4-1029

R.S. Sussmann et E.H. Lauder

DOI: https://doi.org/10.1051/jphyscol:19814225

THE OPTICAL AND STRUCTURAL PROPERTIES OF CVD GERMANIUM CARBIDE p. C4-1033

D.C. Booth et K.J. Voss

DOI: https://doi.org/10.1051/jphyscol:19814226

PHOTOCONDUCTIVITY IN a-Si : H AND a-Si_xC_1-x : H, CORRELATION WITH PHOTOLUMINESCENCE RESULTS p. C4-1037

D. Caffier, M. Le Contellec et J. Richard

DOI: https://doi.org/10.1051/jphyscol:19814227

STRUCTURAL MODELLING OF THE LIQUID STATE OF TETRAHEDRALLY BONDED SEMICONDUCTORS p. C4-1043

M. Popescu

DOI: https://doi.org/10.1051/jphyscol:19814228

PHOTOCONDUCTIVITY IN LIQUID SELENIUM p. C4-1047

J. Rabit et J.C. Perron

DOI: https://doi.org/10.1051/jphyscol:19814229

ELECTRONIC BEHAVIOR OF LIQUID SEMICONDUCTING ALLOYS M_y (Se_.5Te_.5)_1-y WITH MONOVALENT DOPING ELEMENTS p. C4-1051

H. Radscheit, R. Fischer et M. Cutler

DOI: https://doi.org/10.1051/jphyscol:19814230

NUCLEAR QUADRUPOLAR RELAXATION IN LIQUID Ga-Te ALLOYS p. C4-1055

R. Brinkmann, M. Elwenspoek, M. von Hartrott, A. Novak et D. Quitmann

DOI: https://doi.org/10.1051/jphyscol:19814231

CONDUCTIVITY RELAXATION IN STRUCTURE Pt-LIQUID V₂O₅-Pt p. C4-1059

A. Aleksiejünas, R. Bareikiené, V. Bondarenko et S. Gečiauskas

DOI: https://doi.org/10.1051/jphyscol:19814232

NONMETAL TO METAL TRANSITION IN LIQUID CHALCOGENIDES p. C4-1063

H. Radscheit

DOI: https://doi.org/10.1051/jphyscol:19814233

TRANSPORT PROPERTIES OF AMORPHOUS FILMS OF CADMIUM ARSENIDE p. C4-1069

L. Żdanowicz, W. Żdanowicz, Cz. Weclewicz et J.C. Portal

DOI: https://doi.org/10.1051/jphyscol:19814234

ON THE RELAXATION TIME OF CERTAIN TWO-LEVEL SYSTEMS I N AMORPHOUS STRUCTURES p. C4-1073

L. Ferrari et G. Russo

DOI: https://doi.org/10.1051/jphyscol:19814235

STRUCTURAL AND ELECTRICAL PROPERTIES OF NOBLE METAL-HYDROGENATED AMORPHOUS SILICON INTERFACES p. C4-1077

C.C. Tsai, M.J. Thompson et R.J. Nemanich

DOI: https://doi.org/10.1051/jphyscol:19814236

AES AND EELS MEASUREMENTS ON THE Si-Au-Ag INTERFACE p. C4-1081

A. Cros, F. Salvan et J. Derrien

DOI: https://doi.org/10.1051/jphyscol:19814237

ELECTRICAL AND OPTICAL PROPERTIES OF HYDROGENATED AMORPHOUS CARBON p. C4-1085

D.I. Jones et A.D. Stewart

DOI: https://doi.org/10.1051/jphyscol:19814238

Mo - MODIFIED AMORPHOUS Ge : ELECTRICAL TRANSPORT AND STRUCTURE p. C4-1089

A. Devenyi, C. Rusu, A. Belu et R. Manaila

DOI: https://doi.org/10.1051/jphyscol:19814239

PRINCIPLES AND APPLICATIONS OF AMORPHICITY, STRUCTURAL CHANGE, AND OPTICAL INFORMATION ENCODING p. C4-1095

S.R. Ovshinsky

DOI: https://doi.org/10.1051/jphyscol:19814240

PHOTOLITHOGRAPHIC PROCESSES IN AMORPHOUS SEMICONDUCTORS p. C4-1105

M. Janai

DOI: https://doi.org/10.1051/jphyscol:19814241

INSULATOR PHYSICS AND ENGINEERING : ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY APPLICATIONS p. C4-1115

D.J. DiMaria

DOI: https://doi.org/10.1051/jphyscol:19814242

a-Si : H IN ELECTROPHOTOGRAPHY AND VIDICON DEVICES p. C4-1123

I. Shimizu, S. Oda, K. Saito, H. Tomita et E. Inoue

DOI: https://doi.org/10.1051/jphyscol:19814243

RECENT PROGRESS OF THE AMORPHOUS SILICON SOLAR CELLS AND THEIR TECHNOLOGY p. C4-1131

Y. Hamakawa

DOI: https://doi.org/10.1051/jphyscol:19814244

SOME NEW DEVELOPMENTS IN THE FIELD OF AMORPHOUS SILICON SOLAR CELLS p. C4-1143

W.E. Spear, R.A. Gibson, D. Yang, P.G. Lecomber, G. Müller et S. Kalbitzer

DOI: https://doi.org/10.1051/jphyscol:19814245

INDUSTRIALIZATION OF a-Si SOLAR CELLS p. C4-1155

Y. Kuwano et M. Ohnishi

DOI: https://doi.org/10.1051/jphyscol:19814246

CLOSING ADDRESS p. C4-1165

W. Paul

DOI: https://doi.org/10.1051/jphyscol:19814247

NOVEL PROPERTIES OF AMORPHOUS TRANSITION METAL SULFIDES p. C4-1172

R. Chianelli

DOI: https://doi.org/10.1051/jphyscol:19814248

Le Journal de Physique Colloques

Volume 42 / Numéro C4 (Octobre 1981)

Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors