DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON p. C4-3 D. Adler DOI: https://doi.org/10.1051/jphyscol:1981401 PDF (725.5 KB)
TWO DIMENSIONAL ELECTRON LOCALIZATION p. C4-17 M. Pepper DOI: https://doi.org/10.1051/jphyscol:1981402 PDF (310.2 KB)
CONDUCTION NEAR A MOBILITY EDGE p. C4-27 N.F. Mott DOI: https://doi.org/10.1051/jphyscol:1981403 PDF (162.5 KB)
SOME PROBLEMS OF THE THEORY OF ELECTRON ENERGY SPECTRUM OF A DISORDERED SEMICONDUCTOR p. C4-33 V.L. Bonch-Bruevich et A.G. Mironov DOI: https://doi.org/10.1051/jphyscol:1981404 PDF (198.6 KB)
FINITE SIZE SCALING APPROACH TO ANDERSON LOCALIZATION p. C4-37 J.L. Pichard et G. Sarma DOI: https://doi.org/10.1051/jphyscol:1981405 PDF (409.7 KB)
THE DECIMATION METHOD AND ANDERSON LOCALIZATION p. C4-47 D. Weaire et C.J. Lambert DOI: https://doi.org/10.1051/jphyscol:1981406 PDF (125.3 KB)
ANDERSON LOCALISATION IN TWO-BAND SYSTEMS p. C4-51 H. Aoki DOI: https://doi.org/10.1051/jphyscol:1981407 PDF (954.1 KB)
LOCALIZATION OF ELECTRONS IN TWO-DIMENSIONAL RANDON NETWORKS p. C4-55 K. Tsujino, M. Yamamoto, A. Tokunaga et F. Yonezawa DOI: https://doi.org/10.1051/jphyscol:1981408 PDF (1.255 MB)
DISORDER INDUCED DENSITY OF STATES WITHIN THE BAND GAP p. C4-59 H. Leschke et B. Kramer DOI: https://doi.org/10.1051/jphyscol:1981409 PDF (127.8 KB)
NEW NUMERICAL METHOD FOR THE ELECTRONIC PROPERTIES OF DISORDERED SYSTEMS p. C4-63 A. MacKinnon, B. Kramer et W. Graudenz DOI: https://doi.org/10.1051/jphyscol:1981410 PDF (141.2 KB)
A SIMPLE INTERPRETATION OF ELECTRON LOCALISATION BEHAVIOUR IN WEAKLY DISORDERED SYSTEMS p. C4-67 C.H. Hodges DOI: https://doi.org/10.1051/jphyscol:1981411 PDF (178.4 KB)
THE THEORY OF TRANSPORT IN AMORPHOUS SEMICONDUCTORS p. C4-73 B. Movaghar DOI: https://doi.org/10.1051/jphyscol:1981412 PDF (421.4 KB)
DISPERSIVE TRANSPORT IN R-HOPPING SYSTEMS p. C4-83 H. Imgrund et H. Overhof DOI: https://doi.org/10.1051/jphyscol:1981413 PDF (163.6 KB)
THE HALL EFFECT DUE TO HOPPING CONDUCTION IN THE LOCALIZED STATES OF AMORPHOUS SEMICONDUCTORS p. C4-87 L. Friedman et M. Pollak DOI: https://doi.org/10.1051/jphyscol:1981414 PDF (133.7 KB)
THE HALL MOBILITY OF HOPPING CARRIERS p. C4-91 P.N. Butcher et J.A. McInnes DOI: https://doi.org/10.1051/jphyscol:1981415 PDF (130.1 KB)
MODELLING OF THE BEHAVIOUR OF HOPPING CONDUCTIVITY IN A SOLID EXHIBITING A SEMICONDUCTOR-INSULATOR TRANSITION, AS A FUNCTION OF FREQUENCY p. C4-95 J.C. Giuntini, J.L. Jacquemin, J.V. Zanchetta et G. Bordure DOI: https://doi.org/10.1051/jphyscol:1981416 PDF (212.0 KB)
TEMPERATURE DEPENDENCE OF THE HOPPING HALL MOBILITY IN SPATIALLY AND ENERGETICALLY DISORDERED SYSTEMS p. C4-99 M. Grünewald, H. Müller, P. Thomas et D. Würtz DOI: https://doi.org/10.1051/jphyscol:1981417 PDF (142.2 KB)
TRANSPORT PROPERTIES OF COMPENSATED a-Si FILMS p. C4-103 W. Beyer, H. Mell et H. Overhof DOI: https://doi.org/10.1051/jphyscol:1981418 PDF (204.8 KB)
AC LOSS IN AMORPHOUS GERMANIUM AT LOW TEMPERATURES p. C4-107 A.R. Long, W.R. Hogg, N. Balkan et R.P. Ferrier DOI: https://doi.org/10.1051/jphyscol:1981419 PDF (179.1 KB)
MONTE CARLO SIMULATION OF VARIABLE RANGE HOPPING AT THE FERMI LEVEL p. C4-111 G. Schönherr, H. Bässler et M. Silver DOI: https://doi.org/10.1051/jphyscol:1981420 PDF (154.3 KB)
THEORY OF TEMPERATURE AND INTENSITY DEPENDENCE OF PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS p. C4-115 G.H. Döhler DOI: https://doi.org/10.1051/jphyscol:1981421 PDF (194.8 KB)
A COMPARISON OF COHERENT POTENTIAL AND RANDOM WALK METHODS FOR CALCULATING THE TRANSPORT PROPERTIES OF AMORPHOUS SEMICONDUCTORS p. C4-119 V. Halpern DOI: https://doi.org/10.1051/jphyscol:1981422 PDF (148.4 KB)
AC CONDUCTIVITY OF DISORDERED SOLIDS BELOW 1011 Hz p. C4-123 U. Strom et K.L. Ngai DOI: https://doi.org/10.1051/jphyscol:1981423 PDF (168.2 KB)
THEORY OF DISPERSIVE TRANSPORT IN AMORPHOUS SEMICONDUCTORS p. C4-127 K. Godzik et W. Schirmacher DOI: https://doi.org/10.1051/jphyscol:1981424 PDF (202.2 KB)
ELECTRONIC STATES IN AMORPHOUS GERMANIUM CHALCOGENIDES p. C4-133 J. Ma¡ek et B. Velický DOI: https://doi.org/10.1051/jphyscol:1981425 PDF (144.7 KB)
THE ELECTRONIC STRUCTURE OF A MODEL DEFECT IN HYDROGENATED AMORPHOUS SILICON p. C4-137 D.P. DiVincenzo, J. Bernholc et M.H. Brodsky DOI: https://doi.org/10.1051/jphyscol:1981426 PDF (199.2 KB)
A SCALING THEORY FOR HOPPING CONDUCTION p. C4-141 M. Pollak DOI: https://doi.org/10.1051/jphyscol:1981427 PDF (87.37 KB)
MAGNETIC FIELD DEPENDENCE OF THE PHOTO- AND DARK CONDUCTIVITY IN DOPED a-Si:H FILMS p. C4-143 D. Weller, H. Mell, L. Schweitzer et J. Stuke DOI: https://doi.org/10.1051/jphyscol:1981428 PDF (193.0 KB)
AC FIELD AND FREQUENCY DEPENDENCE OF a-Si:H CONDUCTIVITY AT 4,2 K p. C4-147 B. Pistoulet, F. Roche et A. Cagna DOI: https://doi.org/10.1051/jphyscol:1981429 PDF (150.7 KB)
CONDUCTIVITY MEASUREMENTS ON UHV DEPOSITED AMORPHOUS SILICON p. C4-151 P. Thomas et J.C. Flachet DOI: https://doi.org/10.1051/jphyscol:1981430 PDF (179.7 KB)
TEMPERATURE DEPENDENCE OF THE ELECTRON DRIFT MOBILITY IN HYDROGENATED a-Si PREPARED BY SPUTTERING p. C4-155 T. Tiedje, T.D. Moustakas et J.M. Cebulka DOI: https://doi.org/10.1051/jphyscol:1981431 PDF (153.2 KB)
TRANSPORT PROPERTIES OF AMORPHOUS As2Se3 p. C4-159 A.C. Sharp, J.M. Marshall et H.S. Fortuna DOI: https://doi.org/10.1051/jphyscol:1981432 PDF (178.1 KB)
ELECTRON DRIFT MOBILITY MEASUREMENT IN UNDOPED TRIODE DC SPUTTERED a-Si : H p. C4-163 J.F. Peyre, J. Baixeras, D. Mencaraglia, P. Andro et C. Longeaud DOI: https://doi.org/10.1051/jphyscol:1981433 PDF (1.166 MB)
CONTRIBUTION OF SINGLE POLARON HOPPING TO AC CONDUCTION IN AMORPHOUS CHALCOGENIDES p. C4-167 K. Shimakawa DOI: https://doi.org/10.1051/jphyscol:1981434 PDF (1.487 MB)
AC TRANSPORT AND STRUCTURAL RELAXATIONS IN DISORDERED SOLIDS p. C4-171 W.W. Schmidt et K.G. Breitschwerdt DOI: https://doi.org/10.1051/jphyscol:1981435 PDF (153.6 KB)
NON-OHMIC HOPPING CONDUCTION - A TREATMENT BY DIRECTED PERCOLATION THEORY p. C4-175 M. Van der Meer, R. Keiper et R. Schuchardt DOI: https://doi.org/10.1051/jphyscol:1981436 PDF (595.8 KB)
PRESSURE-INDUCED TRANSITIONS IN AMORPHOUS SILICON AND GERMANIUM p. C4-181 S. Minomura DOI: https://doi.org/10.1051/jphyscol:1981437 PDF (305.3 KB)
A NEW APPROACH OF AMORPHOUS SEMICONDUCTORS STRUCTURE USING CURVED SPACES p. C4-189 J.F. Sadoc et R. Mosseri DOI: https://doi.org/10.1051/jphyscol:1981438 PDF (1.513 MB)
INTRINSICALLY BROKEN CHALCOGEN CHEMICAL ORDER IN STOICHIOMETRIC GLASSES p. C4-193 W.J. Bresser, P. Boolchand, P. Suranyi et J.P. de Neufville DOI: https://doi.org/10.1051/jphyscol:1981439 PDF (602.1 KB)
DOMAIN MICROSCOPY IN CHALCOGENIDE ALLOY GLASS THIN FILMS p. C4-197 J.C. Phillips DOI: https://doi.org/10.1051/jphyscol:1981440 PDF (401.4 KB)
BOND EQUILIBRIUM THEORY IN COVALENTLY BONDED ALLOYS p. C4-201 M. Cutler DOI: https://doi.org/10.1051/jphyscol:1981441 PDF (171.5 KB)
THE THIRD LAW OF THERMODYNAMICS AND THE LOW TEMPERATURE PROPERTIES OF DISORDERED SOLIDS p. C4-205 R. Dandoloff et R. Zeyher DOI: https://doi.org/10.1051/jphyscol:1981442 PDF (173.0 KB)
STRUCTURAL MODEL OF FLUORINATED AMORPHOUS-SILICON (a-Si : F) p. C4-209 H. Matsumura, K. Sakai, Y. Kawakyu et S. Furukawa DOI: https://doi.org/10.1051/jphyscol:1981443 PDF (853.8 KB)
REFLECTION SAXS INVESTIGATION OF AMORPHOUS THIN FILMS p. C4-213 R. Manaila DOI: https://doi.org/10.1051/jphyscol:1981444 PDF (174.9 KB)
STRUCTURAL ORDERING RELATED TO CHEMICAL BONDS IN RANDOM NETWORKS p. C4-217 A.G. Revesz, S.H. Wemple et G.V. Gibbs DOI: https://doi.org/10.1051/jphyscol:1981445 PDF (109.5 KB)
EXAFS STUDIES ON THE LOCAL STRUCTURE IN AMORPHOUS GeS AND GeSe p. C4-221 H. Oyanagi, K. Tanaka, S. Hosoya et S. Minomura DOI: https://doi.org/10.1051/jphyscol:1981446 PDF (171.8 KB)
SODIUM ENVIRONMENTS IN GLASS p. C4-225 G.N. Greaves DOI: https://doi.org/10.1051/jphyscol:1981447 PDF (118.6 KB)
ON EFFICIENCY OF SCATTERING METHODS TO DETERMINE THE STRUCTURE OF DISORDERED MATERIALS p. C4-229 J. Slechta DOI: https://doi.org/10.1051/jphyscol:1981448 PDF (1.886 MB)
X-RAY DIFFRACTION STUDY OF ATOMIC STRUCTURE OF PLASMA DEPOSITED a-Si:H ALLOYS p. C4-233 K. Tsuji et S. Minomura DOI: https://doi.org/10.1051/jphyscol:1981449 PDF (168.0 KB)
DIFFRACTION STUDY OF THE a-Si:H STRUCTURE EVOLUTION DURING ANNEALING TREATMENTS PERFORMED DIRECTLY ON THE X RAY GONIOMETER p. C4-237 J. Dixmier, R. Mosseri et J.F. Sadoc DOI: https://doi.org/10.1051/jphyscol:1981450 PDF (150.7 KB)
NETWORK DIMENSIONALITY OF AMORPHOUS GeS2 : OPTICAL HIGH-PRESSURE EXPERIMENTS ON a-GeS2, 2d-GeS2, AND 3d-GeS2 p. C4-241 R. Zallen, B.A. Weinstein et M.L. Slade DOI: https://doi.org/10.1051/jphyscol:1981451 PDF (1.238 MB)
GROWTH SEQUENCE OF Si-CLUSTERS : FROM A FEW ATOMS TO THE AMORPHOUS PHASE p. C4-245 R. Mosseri et J.P. Gaspard DOI: https://doi.org/10.1051/jphyscol:1981452 PDF (163.0 KB)
PARAMETERS CONTROLLING THE DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE SILICON IN Si/H DISCHARGE PLASMAS p. C4-251 S. vepŸek, Z. Iqbal, H.R. Oswald, F.A. Sarott et J.J. Wagner DOI: https://doi.org/10.1051/jphyscol:1981453 PDF (255.8 KB)
ELECTRONIC PROPERTIES OF MICROCRYSTALLINE SILICON FILMS PREPARED IN A GLOW DISCHARGE PLASMA p. C4-257 W.E. Spear, G. Willeke, P.G. Le Comber et A.G. Fitzgerald DOI: https://doi.org/10.1051/jphyscol:1981454 PDF (675.0 KB)
PHOTOEMISSION STUDIES OF THE TRANSITION FROM AMORPHOUS TO MICROCRYSTALLINE SILICON p. C4-261 H. Richter et L. Ley DOI: https://doi.org/10.1051/jphyscol:1981455 PDF (175.9 KB)
PROPERTIES OF MICROCRYSTALLINE P-DOPED GLOW DISCHARGE Si:H FILMS p. C4-265 Y. Uchida, T. Ichimura, M. Ueno et M. Ohsawa DOI: https://doi.org/10.1051/jphyscol:1981456 PDF (757.2 KB)
THE NATURE OF INTERMEDIATE RANGE ORDER IN Si:F:H:(P) ALLOY SYSTEMS p. C4-269 R. Tsu, S. S. Chao, M. Izu, S.R. Ovshinsky, G.J. Jan et F.H. Pollak DOI: https://doi.org/10.1051/jphyscol:1981457 PDF (659.1 KB)
COMPUTER CALCULATION OF SCATTERING INTENSITY FOR DISORDERED MOLYBDENUM DISULFIDE p. C4-273 F.Z. Chien, S.C. Moss, K.S. Liang et R.R. Chianelli DOI: https://doi.org/10.1051/jphyscol:1981458 PDF (194.2 KB)
Si-H VIBRATIONAL PROPERTIES IN CRYSTALLIZED HYDROGENATED SILICON FABRICATED BY REACTIVE SPUTTERING IN H2 ATMOSPHERE p. C4-277 A. Hiraki, T. Imura, K. Mogi et M. Tashiro DOI: https://doi.org/10.1051/jphyscol:1981459 PDF (142.5 KB)
LUMINESCENCE IN a-Si:H p. C4-283 R.A. Street DOI: https://doi.org/10.1051/jphyscol:1981460 PDF (354.6 KB)
SUB-GAP AND BAND EDGE OPTICAL ABSORPTION IN a-Si:H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY p. C4-293 W.B. Jackson et N.M. Amer DOI: https://doi.org/10.1051/jphyscol:1981461 PDF (138.8 KB)
ANNEALING STUDIES ON LOW OPTICAL ABSORPTION OF GD a-Si:H USING PHOTOACOUSTIC SPECTROSCOPY p. C4-297 S. Yamasaki, N. Hata, T. Yoshida, H. Oheda, A. Matsuda, H. Okushi et K. Tanaka DOI: https://doi.org/10.1051/jphyscol:1981462 PDF (177.9 KB)
DISORDER AND THE OPTICAL ABSORPTION EDGE OF HYDROGENATED AMORPHOUS SILICON p. C4-301 G.D. Cody, T. Tiedje, B. Abeles, T.D. Moustakas, B. Brooks et Y. Goldstein DOI: https://doi.org/10.1051/jphyscol:1981463 PDF (632.1 KB)
ENHANCEMENT OF THE PHOTOCURRENT SIGNAL IN a-Si:H BY MEAN OF A WAVEGUIDING TECHNIQUE, APPLICATION TO THE OPTICAL ABSORPTION SPECTROSCOPY BELOW THE BAND GAP p. C4-305 M. Olivier et P. Bouchut DOI: https://doi.org/10.1051/jphyscol:1981464 PDF (190.5 KB)
FIRST OBSERVATIONS OF PHOTOCONDUCTIVITY IN BULK DOPED GeY Se1-Y GLASSES p. C4-309 J.M. Chamberlain et A.J. Moseley DOI: https://doi.org/10.1051/jphyscol:1981465 PDF (171.3 KB)
LASER INDUCED OSCILLATORY PHENOMENA IN a-GeSe2 FILMS p. C4-313 J. Hajtó et Füstöss-Wégner DOI: https://doi.org/10.1051/jphyscol:1981466 PDF (196.3 KB)
ACTIVE AND PASSIVE STUDIES OF AMORPHOUS CHALCOGENIDE IR EMITTERS p. C4-317 P.J. Walsh, A. Jaafar, M.J. Thompson et D. Adler DOI: https://doi.org/10.1051/jphyscol:1981467 PDF (546.0 KB)
OPTICALLY DETECTED MAGNETIC RESONANCE (ODMR) IN a-Si p. C4-323 S.P. Depinna, B.C. Cavenett, T.M. Searle et I.G. Austin DOI: https://doi.org/10.1051/jphyscol:1981468 PDF (191.4 KB)
ELECTRON-BEAM INDUCED CENTERS IN HYDROGENATED AMORPHOUS SILICON p. C4-327 H. Schade et J.I. Pankove DOI: https://doi.org/10.1051/jphyscol:1981469 PDF (178.0 KB)
A NO-STOKES SHIFT MODEL FOR THE PHOTOLUMINESCENCE OF a-Si:H p. C4-331 D. J. Dunstan et F. Boulitrop DOI: https://doi.org/10.1051/jphyscol:1981470 PDF (206.6 KB)
DEFECT CREATION BY OPTICAL EXCITATION IN HYDROGENATED AMORPHOUS SILICON : TIME-RESOLVED LUMINESCENCE AND ODMR MEASUREMENTS p. C4-335 K. Morigaki, I. Hirabayashi, Y. Sano et S. Nitta DOI: https://doi.org/10.1051/jphyscol:1981471 PDF (151.8 KB)
PHOTOLUMINESCENCE VERSUS BORON DOPING AND PREPARATION CONDITIONS p. C4-339 J.C. Bruyère et A. Deneuville DOI: https://doi.org/10.1051/jphyscol:1981472 PDF (170.7 KB)
RADIATIVE RECOMBINATION OF LOCALIZED EXCITONS IN AMORPHOUS AND CRYSTALLINE As2S3 p. C4-343 K. Murayama et M.A. Bösch DOI: https://doi.org/10.1051/jphyscol:1981473 PDF (428.0 KB)
INFRARED AND FAR INFRARED ABSORPTION OF B- AND P-DOPED AMORPHOUS Si p. C4-349 S.C. Shen et M. Cardona DOI: https://doi.org/10.1051/jphyscol:1981474 PDF (139.3 KB)
PHONON DENSITIES OF STATES AND EIGENVECTORS IN HYDROGENATED AND FLUORINATED AMORPHOUS SILICON p. C4-353 W.B. Pollard et G. Lucovsky DOI: https://doi.org/10.1051/jphyscol:1981475 PDF (1.515 MB)
ORDER PARAMETER IN THE GLASS TRANSITION OF VITREOUS S-Ge p. C4-357 H. Kawamura, K. Hattori, K. Matsunaga, Y. Akagi et A. Kawamori DOI: https://doi.org/10.1051/jphyscol:1981476 PDF (156.1 KB)
INFRARED VIBRATIONAL SPECTRA OF CHLORINATED AND HYDROGENATED AMORPHOUS SILICON p. C4-361 S. Kalem, J. Chevallier, S. Al Dallal et J. Bourneix DOI: https://doi.org/10.1051/jphyscol:1981477 PDF (136.0 KB)
STUDY OF DEFECTS IN a-Ge AND a-GeHx USING SURFACE ACOUSTIC WAVE TECHNIQUE p. C4-365 K.L. Bhatia, M.v. Haumeder et S. Hunklinger DOI: https://doi.org/10.1051/jphyscol:1981478 PDF (178.6 KB)
STUDY OF LIGHT INDUCED CHANGES IN a-Si:H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTS p. C4-371 J.D. Cohen, D.V. Lang, J.P. Harbison et A.M. Sergent DOI: https://doi.org/10.1051/jphyscol:1981479 PDF (160.1 KB)
PHOTO-CREATION OF DEFECTS IN PLASMA-DEPOSITED a-Si:H p. C4-375 M.H. Tanielian, N.B. Goodman et H. Fritzsche DOI: https://doi.org/10.1051/jphyscol:1981480 PDF (461.9 KB)
THE EFFECT OF ANNEALING AND ILLUMINATION ON THE FIELD EFFECT CONDUCTANCE OF AMORPHOUS SILICON p. C4-379 M.J. Powell, B.C. Easton et D.H. Nicholls DOI: https://doi.org/10.1051/jphyscol:1981481 PDF (202.3 KB)
COMPARISON OF OPTICALLY INDUCED LOCALIZED STATES IN CHALCOGENIDE GLASSES AND THEIR CRYSTALLINE COUNTERPARTS p. C4-383 S.G. Bishop, B.V. Shanabrook, U. Strom et P.C. Taylor DOI: https://doi.org/10.1051/jphyscol:1981482 PDF (212.1 KB)
PHOTO-INDUCED E.S.R. IN GLASSY SULPHUR p. C4-387 S.R. Elliott DOI: https://doi.org/10.1051/jphyscol:1981483 PDF (235.3 KB)
STRUCTURAL MODELLING OF REVERSIBLE PHOTODARKENING IN a-AsxSe p. C4-391 R. Grigorovici et A. Vancu DOI: https://doi.org/10.1051/jphyscol:1981484 PDF (168.2 KB)
LASER-INDUCED METASTABLE STATES IN AMORPHOUS SEMICONDUCTORS p. C4-395 M. Wautelet, R. Andrew, M. Failly-Lovato et L.D. Laude DOI: https://doi.org/10.1051/jphyscol:1981485 PDF (156.5 KB)
DETAILED TEMPERATURE-CYCLING STUDIES OF PHOTOSTRUCTURAL CHANGE IN a-As2S3 p. C4-399 H. Hamanaka, K. Tanaka, K. Tsuji et S. Minomura DOI: https://doi.org/10.1051/jphyscol:1981486 PDF (178.8 KB)
EXISTENCE OF IRREVERSIBILITY IN STAEBLER-WRONSKI EFFECT AND FATIGUE EFFECT OF PHOTOLUMINESCENCE OF GDa-Si : H p. C4-403 S. Nitta, Y. Takahashi et M. Noda DOI: https://doi.org/10.1051/jphyscol:1981487 PDF (134.7 KB)
LIGHT-INDUCED CHANGES IN a-Si : H ANALYSED BY FIELD EFFECT MEASUREMENTS p. C4-407 T . Stoica DOI: https://doi.org/10.1051/jphyscol:1981488 PDF (171.2 KB)
ELECTRONIC PROPERTIES OF a-Si : H FROM MEASUREMENTS ON DEVICES p. C4-413 R.S. Crandall DOI: https://doi.org/10.1051/jphyscol:1981489 PDF (365.7 KB)
APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS p. C4-423 P.G. Le Comber, A.J. Snell, K.D. Mackenzie et W.E. Spear DOI: https://doi.org/10.1051/jphyscol:1981490 PDF (1.447 MB)
GEMINATE AND NON-GEMINATE RECOMBINATION IN AMORPHOUS SEMICONDUCTORS p. C4-433 J. Mort DOI: https://doi.org/10.1051/jphyscol:1981491 PDF (952.2 KB)
XEROGRAPHIC SPECTROSCOPY OF LOCALIZED ELECTRONIC STATES IN AMORPHOUS SEMICONDUCTORS p. C4-443 M. Abkowitz et R.C. Enck DOI: https://doi.org/10.1051/jphyscol:1981492 PDF (780.1 KB)
OBSERVATION OF ACOUSTIC EMISSION FROM a-Si : H PIN JUNCTIONS p. C4-447 Y. Mishima, M. Hirose, I. Suemune, M. Yamanishi et Y. Osaka DOI: https://doi.org/10.1051/jphyscol:1981493 PDF (187.8 KB)
DETERMINATION OF MIDGAP DENSITY OF STATES IN a-Si : H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS p. C4-451 W. den Boer DOI: https://doi.org/10.1051/jphyscol:1981494 PDF (143.9 KB)
DENSITY OF STATES STUDY IN SPUTTERED a-Si : H : EFFECT OF IMPURITIES AND H RELATED DEFECTS p. C4-455 P. Viktorovitch, G. Moddel, J. Blake, S. Oguz, R.L. Weisfield et W. Paul DOI: https://doi.org/10.1051/jphyscol:1981495 PDF (153.6 KB)
FUNDAMENTAL TUNNELING PROCESSES IN MOSa SOLAR CELLS p. C4-459 I. Balberg, J.J. Hanak, H.A. Weakliem et E. Gal DOI: https://doi.org/10.1051/jphyscol:1981496 PDF (185.6 KB)
HIGH EFFICIENCY, LARGE-AREA PHOTOVOLTAIC DEVICES USING AMORPHOUS Si : F : H ALLOY p. C4-463 A. Madan, W. Czubatyj, J. Yang, J. McGill et S.R. Ovshinsky DOI: https://doi.org/10.1051/jphyscol:1981497 PDF (124.5 KB)
INJECTION LUMINESCENCE IN AMORPHOUS SILICON p+-i-n+ JUNCTIONS p. C4-467 T.S. Nashashibi, I.G. Austin, T.M. Searle, R.A. Gibson, P.G. LeComber et W.E. Spear DOI: https://doi.org/10.1051/jphyscol:1981498 PDF (171.7 KB)
VALENCY ELECTRON CONTROL IN A GLOW DISCHARGE PRODUCED a-SiC : H AND ITS APPLICATION TO a-Si SOLAR CELL p. C4-471 Y. Tawada, M. Kondo, H. Okamoto et Y. Hamakawa DOI: https://doi.org/10.1051/jphyscol:1981499 PDF (1.245 MB)
CORRELATION OF ELECTRICAL PROPERTIES OF a-SiHx MIS SOLAR CELL STRUCTURES WITH THE STATE OF OXIDATION OF THE INTERFACE p. C4-475 C.R. Wronski, Y. Goldstein, S. Kelemen, B. Abeles et H. Witzke DOI: https://doi.org/10.1051/jphyscol:19814100 PDF (211.4 KB)
INTERACTION OF ULTRASONIC PHONONS WITH DONOR IMPURITIES IN HYDROGENATED AMORPHOUS GERMANIUM p. C4-479 K.L. Bhatia et S. Hunklinger DOI: https://doi.org/10.1051/jphyscol:19814101 PDF (177.0 KB)
TANDEM TYPE SOLAR CELLS USING a-Si : H AND a-SiGe : H FILMS p. C4-483 G. Nakamura, K. Sato, H. Kondo, Y. Yukimoto et K. Shirahata DOI: https://doi.org/10.1051/jphyscol:19814102 PDF (207.6 KB)
ELECTRON TRANSPORT IN HYDROGENATED AMORPHOUS SILICON SCHOTTKY BARRIERS AND DEEP LOCALIZED STATES KINETICS p. C4-487 S. Deleonibus et D. Jousse DOI: https://doi.org/10.1051/jphyscol:19814103 PDF (175.6 KB)
MINORITY CARRIER TRANSPORT IN DEPLETION LAYERS OF n-i-p a-Si : H SOLAR CELLS p. C4-491 V. Dalal et F. Alvarez DOI: https://doi.org/10.1051/jphyscol:19814104 PDF (152.8 KB)
PHOTOELECTRIC PROPERTIES OF GD a-Si : H MONOLAYER FILMS FOR ELECTROPHOTOGRAPHIC APPLICATIONS p. C4-495 N. Yamamoto, K. Wakita, Y. Nakayama et T. Kawamura DOI: https://doi.org/10.1051/jphyscol:19814105 PDF (175.7 KB)
THEORETICAL ANALYSES OF a-Si : H DIODE CHARACTERISTICS p. C4-499 I. Chen et S. Lee DOI: https://doi.org/10.1051/jphyscol:19814106 PDF (212.4 KB)
CHARGE CENTROID DETERMINATION IN FIELD-EFFECT EXPERIMENTS p. C4-503 S.D. Senturia, J. Rubinstein, S.J. Azoury et D. Adler DOI: https://doi.org/10.1051/jphyscol:19814107 PDF (173.6 KB)
DRIFT TYPE PHOTOVOLTAIC EFFECT IN a-Si p-i-n JUNCTION p. C4-507 H. Okamoto, T. Yamaguchi, S. Nonomura et Y. Hamakawa DOI: https://doi.org/10.1051/jphyscol:19814108 PDF (193.7 KB)
A STUDY OF A NEW HETEROJUNCTION MADE OF n-TYPE SILICON AND p-TYPE AMORPHOUS SEMICONDUCTOR p. C4-511 Y. Sawan, M. El-Gabaly, F. Wakim et S. Atari DOI: https://doi.org/10.1051/jphyscol:19814109 PDF (135.0 KB)
DOPING EFFECTS IN TRANSPORT PROPERTIES IN a-Si p-n JUNCTIONS p. C4-515 Wu Zhong Yan, Y. Marfaing et J. Dixmier DOI: https://doi.org/10.1051/jphyscol:19814110 PDF (124.6 KB)
CURRENT PATH IN AMORPHOUS-SILICON FIELD EFFECT TRANSISTORS p. C4-519 M. Matsumura, S.I. Kuno et Y. Uchida DOI: https://doi.org/10.1051/jphyscol:19814111 PDF (138.7 KB)
FIELD EFFECT STUDIES ON a-Si:H FILMS p. C4-523 M. Grünewald, K. Weber, W. Fuhs et P. Thomas DOI: https://doi.org/10.1051/jphyscol:19814112 PDF (146.1 KB)
PHOTOVOLTAIC EFFECT IN INTERSTITIALLY DOPED a-Si:H p. C4-527 S. Kumar et S.C. Agarwal DOI: https://doi.org/10.1051/jphyscol:19814113 PDF (246.9 KB)
TIME RESOLVED OPTICAL SPECTROSCOPY IN AMORPHOUS SILICON AND CHALCOGENIDES p. C4-533 J. Shah DOI: https://doi.org/10.1051/jphyscol:19814114 PDF (21.99 KB)
TEMPORAL DECAY OF THE OPTICALLY INDUCED PROPERTIES OF A SMALL-POLARONIC SOLID p. C4-535 D. Emin DOI: https://doi.org/10.1051/jphyscol:19814115 PDF (219.9 KB)
PICOSECOND DYNAMICS OF CARRIERS IN AMORPHOUS SEMICONDUCTORS p. C4-539 Z. Vardeny, J. Tauc et C.J. Fang DOI: https://doi.org/10.1051/jphyscol:19814116 PDF (184.4 KB)
PHOTOLUMINESCENCE DECAY IN a-Si : INFLUENCE OF EXCITATION DENSITY AND n-TYPE DOPING p. C4-543 W. Czaja et S. Kinmond DOI: https://doi.org/10.1051/jphyscol:19814117 PDF (149.3 KB)
RECOMBINATION IN DISORDERED SOLIDS p. C4-547 H. Scher DOI: https://doi.org/10.1051/jphyscol:19814118 PDF (219.5 KB)
RECOMBINATION OF PHOTOGENERATED CARRIERS IN DOPED HYDROGENATED AMORPHOUS SILICON p. C4-551 J.M. Hvam et M.H. Brodsky DOI: https://doi.org/10.1051/jphyscol:19814119 PDF (175.3 KB)
TIME RESOLVED SPECTROSCOPY OF THE PHOTOINDUCED ABSORPTION IN GLOW-DISCHARGE a-Si:H p. C4-555 S. Ray, Z. Vardeny et J. Tauc DOI: https://doi.org/10.1051/jphyscol:19814120 PDF (138.7 KB)
DENSITY OF STATES IN THE GAP OF a-As2Se3 BY PHOTOCURRENT TRANSIENT SPECTROSCOPY p. C4-559 D. Monroe, J. Orenstein et M. Kastner DOI: https://doi.org/10.1051/jphyscol:19814121 PDF (146.0 KB)
TRANSIENT PHOTOCONDUCTIVITY AND SCHOTTKY BARRIER PROFILE DETERMINATION IN a-Si:H p. C4-563 T. Datta et M. Silver DOI: https://doi.org/10.1051/jphyscol:19814122 PDF (138.7 KB)
PRIMARY AND SECONDARY PHOTOCURRENTS IN n-TYPE AND p-TYPE a-Si:H FILMS p. C4-567 H.M. Welsch, W. Fuhs, K.H. Greeb et H. Mell DOI: https://doi.org/10.1051/jphyscol:19814123 PDF (171.8 KB)
TIME-RESOLVED LUMINESCENCE MEASUREMENTS ON AMORPHOUS PHOSPHORUS p. C4-571 G. Fasol et E.A. Davis DOI: https://doi.org/10.1051/jphyscol:19814124 PDF (189.7 KB)
PHOTOCONDUCTIVITY AND RELATED MEASUREMENTS OF THE CONDUCTION BAND TAIL IN a-Si:H p. C4-575 R.A. Street DOI: https://doi.org/10.1051/jphyscol:19814125 PDF (170.2 KB)
HIGH-SPEED TRANSIENT EFFECTS IN CHALCOGENIDE GLASSES p. C4-579 T. Shiraishi et D. Adler DOI: https://doi.org/10.1051/jphyscol:19814126 PDF (153.2 KB)
NON-DISPERSIVE AND DISPERSIVE TRANSPORT IN AMORPHOUS GERMANIUM SELENIDE AND HYDROGENATED SILICON p. C4-583 J. Shirafuji, G.I. Kim, H. Matsui, M. Inoue, K. Yoshino et Y. Inuishi DOI: https://doi.org/10.1051/jphyscol:19814127 PDF (237.2 KB)
RECOMBINATION PROCESSES AND GAP STATES IN HYDROGENATED AMORPHOUS SILICON AS ELUCIDATED BY TIME-RESOLVED LUMINESCENCE MEASUREMENTS p. C4-587 I. Hirabayashi, K. Morigaki et S. Nitta DOI: https://doi.org/10.1051/jphyscol:19814128 PDF (135.7 KB)
TIME RESOLVED PHOTOLUMINESCENCE SPECTRA OF SPUTTERED a-Si:H p. C4-591 R.W. Collins et W. Paul DOI: https://doi.org/10.1051/jphyscol:19814129 PDF (154.7 KB)
DUAL LIGHT BEAM MODULATION OF PHOTOCARRIER LIFETIME IN INTRINSIC a-Si:H p. C4-597 P.D. Persans et H. Fritzsche DOI: https://doi.org/10.1051/jphyscol:19814130 PDF (159.3 KB)
OPTICAL DLTS MEASUREMENTS OF LOCALIZED STATES IN AMORPHOUS CHALCOGENIDE SEMICONDUCTORS p. C4-601 M. Okuda, H. Naito, H. Nakayama et T. Nakau DOI: https://doi.org/10.1051/jphyscol:19814131 PDF (155.3 KB)
THERMAL AND OPTICAL SPACE CHARGE SPECTROSCOPY OF GAP STATES IN a-Si:H p. C4-605 A. Chenevas-Paule et J. Dijon DOI: https://doi.org/10.1051/jphyscol:19814132 PDF (164.3 KB)
PHOTORESPONSE TIME AND DENSITY OF LOCALIZED STATES IN THE MOBILITY GAP OF a-Si:H ALLOYS PREPARED BY R.F. GLOW DISCHARGE p. C4-609 L. Guimarães, R. Martins et A.G. Dias DOI: https://doi.org/10.1051/jphyscol:19814133 PDF (171.3 KB)
ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY : ITS APPLICATION TO THE STUDY OF GAP STATES OF a-Si:H p. C4-613 H. Okushi, Y. Tokumaru, S. Yamasaki, H. Oheda et K. Tanaka DOI: https://doi.org/10.1051/jphyscol:19814134 PDF (182.2 KB)
MEASUREMENT AND ANALYSIS OF CURRENT TRANSIENTS IN WELL-CHARACTERIZED a-Si:H p. C4-617 M.J. Thompson, N.M. Johnson et R.A. Street DOI: https://doi.org/10.1051/jphyscol:19814135 PDF (184.8 KB)
PROPERTIES OF PURE SILICON AMORPHOUS FILMS PREPARED BY rf-BIAS SPUTTERING p. C4-623 M. Suzuki, T. Maekawa, Y. Kakimoto et T. Bandow DOI: https://doi.org/10.1051/jphyscol:19814136 PDF (482.5 KB)
PREPARATION AND PROPERTIES OF ION BEAM DEPOSITED a-SiHx p. C4-627 G.P. Ceasar, K. Okumura et S.F. Grimshaw DOI: https://doi.org/10.1051/jphyscol:19814137 PDF (1.137 MB)
EFFECTS OF THE SUBSTRATE POTENTIAL ON THE INCORPORATION MANNER OF HYDROGEN AND IMPURITY IN a-Si : H FILMS p. C4-631 S. Hotta, Y. Tawada, H. Okamoto et Y. Hamakawa DOI: https://doi.org/10.1051/jphyscol:19814138 PDF (204.8 KB)
DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD p. C4-635 B.A. Scott, R.M. Plecenik et E.E. Simonyi DOI: https://doi.org/10.1051/jphyscol:19814139 PDF (149.4 KB)
THETA-PINCH PLASMA HYDROGENATION OF EVAPORATED AMORPHOUS SILICON FILMS p. C4-639 P.K. John, S.K. Wong, P.K. Gogna, B.Y. Tong et K.P. Chik DOI: https://doi.org/10.1051/jphyscol:19814140 PDF (583.0 KB)
GLOW-DISCHARGE a-Si : F PREPARED FROM SiF2 GAS p. C4-643 R. Weil, M. Janai, B. Pratt, K. Levin et F. Moser DOI: https://doi.org/10.1051/jphyscol:19814141 PDF (181.3 KB)
A NEW TYPE OF a-Si PREPARED BY dc SPUTTERING : P, B AND H DOPING EFFECT p. C4-647 Nguyen Van dong, Y. Fournier et J.Y. Le Ny DOI: https://doi.org/10.1051/jphyscol:19814142 PDF (136.9 KB)
PREPARATION AND PROPERTIES OF POLYSILANES : MODEL COMPOUNDS FOR HYDROGENATED a-Si p. C4-651 P. John, I.M. Odeh, M.J.K. Thomas et J.I.B. Wilson DOI: https://doi.org/10.1051/jphyscol:19814143 PDF (134.8 KB)
EFFECT OF TEMPERATURE ON OPTICAL PROPERTIES OF GLOW DISCHARGE HYDROGENATED AMORPHOUS SILICON FILMS p. C4-655 A. Donnadieu, B. Yous, J.M. Berger, J.P. Ferraton et J. Robin DOI: https://doi.org/10.1051/jphyscol:19814144 PDF (150.4 KB)
R.F. MAGNETRON SPUTTERING OF a-Si : H p. C4-659 A.R. Mirza, A.J. Rhodes, J. Allison et M.J. Thompson DOI: https://doi.org/10.1051/jphyscol:19814145 PDF (143.0 KB)
ELECTRICAL PROPERTIES AND PHOTOLUMINESCENCE OF AMORPHOUS SILICON p. C4-663 X.B. Liao, G.L. Kong, X.R. Yang, P.D. Wang, Y.Q. Chao, Z.M. Chen et C.L. Liu DOI: https://doi.org/10.1051/jphyscol:19814146 PDF (152.7 KB)
NEW AMORPHOUS ALLOY SEMICONDUCTORS : a-Si1-xSnx p. C4-667 C. Vérié, J.F. Rochette et J.P. Rebouillat DOI: https://doi.org/10.1051/jphyscol:19814147 PDF (99.29 KB)
LARGE-AREA DEPOSITION OF AMORPHOUS-SILICON p. C4-671 M. Matsumura et Y. Uchida DOI: https://doi.org/10.1051/jphyscol:19814148 PDF (1.091 MB)
RF POWER AND TEMPERATURE DEPENDENCES IN GD a-Si PRODUCED FROM HEATED SiH4 p. C4-675 S. Hasegawa, Y. Kurata, Y. Imai et S. Narikawa DOI: https://doi.org/10.1051/jphyscol:19814149 PDF (152.0 KB)
INFERIOR ELECTRONIC PROPERTIES OF RF-SPUTTERED a-Si : H FILMS WITH ONLY THE 2000-cm-1 IR ABSORPTION BAND p. C4-679 S. Oguz, D.K. Paul, J. Blake, R.W. Collins, A. Lachter, B.G. Yacobi et W. Paul DOI: https://doi.org/10.1051/jphyscol:19814150 PDF (131.0 KB)
INFLUENCE OF HYDROGEN PARTIAL PRESSURE ON DEPOSITION AND PROPERTIES OF SPUTTERED AMORPHOUS GALLIUM ARSENIDE p. C4-683 L. Alimoussa, H. Carchano et J.P. Thomas DOI: https://doi.org/10.1051/jphyscol:19814151 PDF (169.0 KB)
A SIMPLIFIED MODEL FOR THE DEPOSITION KINETICS OF GD a-Si : H FILMS p. C4-687 A. Matsuda, M. Matsumura, K. Nakagawa, S. Yamasaki et K. Tanaka DOI: https://doi.org/10.1051/jphyscol:19814152 PDF (145.8 KB)
STABLE AMORPHOUS GERMANIUM FILMS PREPARED IN ULTRA HIGH VACUUM AND MEASURED IN-SITU : STRUCTURE AND ELECTRONIC PROPERTIES p. C4-691 P. Viščor et A.D. Yoffe DOI: https://doi.org/10.1051/jphyscol:19814153 PDF (545.3 KB)
THE ENHANCEMENT OF THE DARK CONDUCTIVITY AND PHOTOCONDUCTIVITY OF GD a-Si INTRODUCING O2, N2 p. C4-695 Wen Yuan Xu, Zhong Lin Sun, Zhong Pang Wang et De Lin Lee DOI: https://doi.org/10.1051/jphyscol:19814154 PDF (142.6 KB)
PLASMA-DEPOSITED HYDROGENATED CHALCOGENIDE GLASSES p. C4-699 H. Fritzsche, V. Šmíd, H. Ugur et P.J. Gaczi DOI: https://doi.org/10.1051/jphyscol:19814155 PDF (133.3 KB)
PHYSICAL PROPERTIES OF AMORPHOUS CVD SILICON p. C4-705 M. Hirose DOI: https://doi.org/10.1051/jphyscol:19814156 PDF (377.8 KB)
NMR INVESTIGATIONS OF HYDROGENATED AMORPHOUS SILICON p. C4-715 J.A. Reimer DOI: https://doi.org/10.1051/jphyscol:19814157 PDF (396.8 KB)
HIGH TEMPERATURE 1H NMR IN a-Si : H p. C4-725 W.E. Carlos et P.C. Taylor DOI: https://doi.org/10.1051/jphyscol:19814158 PDF (127.0 KB)
NMR AND ESR STUDIES ON ANNEALING EFFECTS IN a-Si : F : H AND a-Si : H p. C4-729 S. Ueda, M. Kumeda et T. Shimizu DOI: https://doi.org/10.1051/jphyscol:19814159 PDF (158.0 KB)
MULTIPHASES DESCRIPTION OF a-Si : H p. C4-733 A. Deneuville, J.C. Bruyère et H. Hamdi DOI: https://doi.org/10.1051/jphyscol:19814160 PDF (144.6 KB)
EFFECT OF HYDROGENATION ON DOPED a-Si PREPARED BY CVD p. C4-737 J. Magarino, A. Friederich, D. Kaplan et A. Deneuville DOI: https://doi.org/10.1051/jphyscol:19814161 PDF (144.2 KB)
CHEMICAL BONDING OF ALLOY AND DOPANT ATOMS IN AMORPHOUS SILICON p. C4-741 G. Lucovsky DOI: https://doi.org/10.1051/jphyscol:19814162 PDF (164.4 KB)
THEORY OF DOPANT LEVEL DEPTHS IN a-Si p. C4-745 J. Robertson DOI: https://doi.org/10.1051/jphyscol:19814163 PDF (528.3 KB)
IMPERFECT AMORPHOUS SOLID AND BIPOLARONIC GROUND-STATE p. C4-749 B.K. Chakraverty DOI: https://doi.org/10.1051/jphyscol:19814164 PDF (470.3 KB)
SURFACE PROPERTIES OF a-Si : H AND a-Si : F INVESTIGATED BY PHOTOELECTRON SPECTROSCOPY p. C4-753 L. Ley, H. Richter, R. Kärcher, R.L. Johnson et J. Reichardt DOI: https://doi.org/10.1051/jphyscol:19814165 PDF (291.6 KB)
ELECTROREFLECTANCE STUDY OF ELECTRONIC STRUCTURE IN a-Si : H p. C4-761 S. Nonomura, H. Okamoto, T. Nishino et Y. Hamakawa DOI: https://doi.org/10.1051/jphyscol:19814166 PDF (194.1 KB)
DENSITY OF STATES OF AMORPHOUS HYDROGENATED Si p. C4-765 P. Lemaire et J.P. Gaspard DOI: https://doi.org/10.1051/jphyscol:19814167 PDF (549.5 KB)
CALCULATIONS OF TRANSPORT PROPERTIES IN a-Si : H p. C4-769 W.E. Pickett, D.A. Papaconstantopoulos et E.N. Economou DOI: https://doi.org/10.1051/jphyscol:19814168 PDF (127.9 KB)
BONDING IN HYDROGENATED AMORPHOUS SILICON p. C4-773 H.R. Shanks, F.R. Jeffrey et M.E. Lowry DOI: https://doi.org/10.1051/jphyscol:19814169 PDF (155.1 KB)
HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMS p. C4-779 F.J. Demond, G. Müller, H. Damjantschitsch, H. Mannsperger, S. Kalbitzer, P.G. Le Comber et W.E. Spear DOI: https://doi.org/10.1051/jphyscol:19814170 PDF (143.7 KB)
HYDROGEN EVOLUTION FROM PLASMA-DEPOSITED AMORPHOUS SILICON FILMS p. C4-783 W. Beyer et H. Wagner DOI: https://doi.org/10.1051/jphyscol:19814171 PDF (202.2 KB)
CHEMICAL SITES OF RARE GAS ATOMS IN AMORPHOUS SILICON p. C4-787 Y. Katayama, T. Shimada, K. Usami et E. Maruyama DOI: https://doi.org/10.1051/jphyscol:19814172 PDF (156.0 KB)
EFFECTS OF ARGON ON THE PROPERTIES OF RF SPUTTERED AMORPHOUS SILICON p. C4-791 Peng Shao-qi, Yu Bing Qai, Zhang Pei Xian et Ye Xian Jing DOI: https://doi.org/10.1051/jphyscol:19814173 PDF (116.3 KB)
NUCLEAR SCATTERING MEASUREMENTS OF COMPOSITION PROFILES IN a-Si : H MULTILAYER STRUCTURES p. C4-795 C. Brassard, R. Groleau, J. L'Ecuyer, J.P. Martin, J.F. Currie, P. Depelsenaire, M. Wertheimer et A. Yelon DOI: https://doi.org/10.1051/jphyscol:19814174 PDF (143.1 KB)
INTERACTION BETWEEN ARGON AND DOPANTS IN SPUTTERED a-Si : H p. C4-799 M. Toulemonde, J.J. Grob, J.C. Bruyère, A. Deneuville, H. Hamdi et P. Siffert DOI: https://doi.org/10.1051/jphyscol:19814175 PDF (92.61 KB)
ELECTRON IRRADIATION IN AMORPHOUS HYDROGENATED SILICON p. C4-803 R.V. Navkhandewala, K.L. Narasimhan et S. Guha DOI: https://doi.org/10.1051/jphyscol:19814176 PDF (153.6 KB)
PLASMA DIAGNOSTIC DURING THE GROWTH OF a-Si : H p. C4-807 T. Hamasaki, M. Hirose et Y. Osaka DOI: https://doi.org/10.1051/jphyscol:19814177 PDF (152.8 KB)
ANNEALING AND HYDROGENATION BEHAVIOUR OF EVAPORATED AND SPUTTERED HIGH-PURITY AMORPHOUS SILICON FILMS p. C4-811 N. Kniffler, W.W. Müller, J.M. Pirrung, N. Hänisch, B. Schröder et J. Geiger DOI: https://doi.org/10.1051/jphyscol:19814178 PDF (156.2 KB)
A THEORETICAL STUDY OF HYDROGEN EXODIFFUSION IN a-Si : H, COMPARISON WITH CONDUCTIVITY MEASUREMENTS p. C4-815 K. Zellama, P. Germain, C. Picard et B. Bourdon DOI: https://doi.org/10.1051/jphyscol:19814179 PDF (182.4 KB)
DARK- AND PHOTOCONDUCTIVITY OF COMPENSATED a-Si : H p. C4-819 B. Hoheisel, R. Fischer et J. Stuke DOI: https://doi.org/10.1051/jphyscol:19814180 PDF (169.4 KB)
APPLICATION OF THE MOLECULAR ORBITAL SELF-CONSISTENT-FIELD METHOD TO THE STUDY OF a-Si p. C4-823 L.E. Sansores, E.A. Cetina et J. Tagueña-Martínez DOI: https://doi.org/10.1051/jphyscol:19814181 PDF (517.3 KB)
INFLUENCE OF CORRELATION EFFECTS ON THE ELECTRONIC PROPERTIES OF AMORPHOUS SILICON p. C4-827 L. Schweitzer, M. Grünewald et H. Dersch DOI: https://doi.org/10.1051/jphyscol:19814182 PDF (161.9 KB)
INVESTIGATION INTO THE CONDUCTION MECHANISM OF CVD AMORPHOUS AND POLYCRYSTALLINE SILICON FILMS p. C4-831 Yu-liang He et Hsiang-na Liu DOI: https://doi.org/10.1051/jphyscol:19814183 PDF (155.3 KB)
TEMPERATURE AND FREQUENCY DEPENDENCES OF NMR SPIN-LATTICE RELAXATION TIME T1 IN a-Si : H p. C4-835 K.L. Ngai DOI: https://doi.org/10.1051/jphyscol:19814184 PDF (155.1 KB)
HIGH RESOLUTION NMR OF 29Si IN AMORPHOUS HYDROGENATED SILICON p. C4-839 B. Lamotte, A. Rousseau et A. Chenevas-Paule DOI: https://doi.org/10.1051/jphyscol:19814185 PDF (92.71 KB)
THE DIFFUSION OF HEAVY ALKALI ATOMS IN AMORPHOUS SILICON p. C4-843 M. Reinelt et S. Kalbitzer DOI: https://doi.org/10.1051/jphyscol:19814186 PDF (206.2 KB)
PHOTOLUMINESCENCE STUDIES ON a-Si : H : Cl FILMS p. C4-849 F. Evangelisti, P. Fiorini, G. Fortunato, A. Frova, G. Bruno, P. Capezzuto et F. Cramarossa DOI: https://doi.org/10.1051/jphyscol:19814187 PDF (113.5 KB)
REVIEW OF GROUP-V AMORPHOUS SEMICONDUCTORS p. C4-855 E.A. Davis DOI: https://doi.org/10.1051/jphyscol:19814188 PDF (399.9 KB)
PHOTOLUMINESCENCE AND ESR STUDIES OF LOCALIZED STATES IN AMORPHOUS PHOSPHORUS p. C4-865 B.V. Shanabrook, S.G. Bishop et P.C. Taylor DOI: https://doi.org/10.1051/jphyscol:19814189 PDF (176.3 KB)
ELECTRICAL AND OPTICAL PROPERTIES OF UHV SUBLIMED a-As p. C4-869 R.T. Phillips, A.J. Mackintosh et A.D. Yoffe DOI: https://doi.org/10.1051/jphyscol:19814190 PDF (177.0 KB)
OPTICAL ABSORPTION AND STRUCTURAL ORDER IN SPUTTERED AMORPHOUS PHOSPHORUS p. C4-873 R.J. Pomian, L.J. Pilione et J.S. Lannin DOI: https://doi.org/10.1051/jphyscol:19814191 PDF (156.5 KB)
DISORDER EFFECTS ON GaP CORE LEVELS STUDIED BY ELECTRON SPECTROSCOPIES p. C4-877 G. Dufour, E. Belin, C. Senemaud, A. Gheorghiu et M.L. Theye DOI: https://doi.org/10.1051/jphyscol:19814192 PDF (143.7 KB)
ELECTRONIC PROPERTIES OF FLASH-EVAPORATED AMORPHOUS GaSb FILMS p. C4-881 A. Gheorghiu, T. Rappeneau,, J.P. Dupin et M.L. Theye DOI: https://doi.org/10.1051/jphyscol:19814193 PDF (155.4 KB)
STUDIES OF CHALCOGENIDE VITREOUS SEMICONDUCTORS IN THE IOFFE PHYSICOTECHNICAL INSTITUTE p. C4-887 B.T. Kolomiets DOI: https://doi.org/10.1051/jphyscol:19814194 PDF (582.1 KB)
SILVER-DOPED AMORPHOUS As2Se3 FILMS STUDIED BY XPS p. C4-899 T. Ueno et A. Odajima DOI: https://doi.org/10.1051/jphyscol:19814195 PDF (150.0 KB)
LASER-RAMAN STUDY OF THE STRUCTURE OF SILVER DOPED As40S60 GLASS p. C4-903 A.P. Firth, A.E. Owen et P.J. Ewen DOI: https://doi.org/10.1051/jphyscol:19814196 PDF (145.4 KB)
DOPING OF CHALCOGENIDE GLASSES IN THE Ge-Se AND Ge-Te SYSTEMS p. C4-907 P. Nagels, M. Rotti et S. Vikhrov DOI: https://doi.org/10.1051/jphyscol:19814197 PDF (180.0 KB)
PHOTO AND ELECTROCHEMICAL DOPING IN Ge-BASED CHALCOGENIDES p. C4-911 S. Rajagopalan, K. Solomon Harshavardhan, Bhanwar Singh et K.L. Chopra DOI: https://doi.org/10.1051/jphyscol:19814198 PDF (165.8 KB)
RADIATION-INDUCED DEFECTS FORMATION IN CHALCOGENIDE GLASSES p. C4-915 Sh.Sh. Sarsembinov, E.E. Abdulgafarov et K. Tolkanchinov DOI: https://doi.org/10.1051/jphyscol:19814199 PDF (143.0 KB)
POLARIZED LIGHT ELECTROABSORPTION ANISOTROPY OF VITREOUS CHALCOGENIDE SEMICONDUCTORS p. C4-919 B.L. Gelmont, B.T. Kolomiets, T.F. Mazets et S.K. Pavlov DOI: https://doi.org/10.1051/jphyscol:19814200 PDF (114.7 KB)
FARADAY ROTATION IN a-As2Se3 p. C4-923 B. Vanhuyse, P. Van den Keybus et W. Grevendonk DOI: https://doi.org/10.1051/jphyscol:19814201 PDF (127.7 KB)
AC CONDUCTIVITY OF AMORPHOUS As-Se-Ag SYSTEM p. C4-927 M. Kitao, K. Hirata et S. Yamada DOI: https://doi.org/10.1051/jphyscol:19814202 PDF (119.8 KB)
HARDNESS AND THERMAL CONDUCTIVITY OF As-Se-Te CHALCOGENIDE GLASSES p. C4-931 M.F. Kotkata et M.B. El-den DOI: https://doi.org/10.1051/jphyscol:19814203 PDF (167.7 KB)
EVIDENCE FOR CHARGED DEFECTS IN CHALCOGENIDES FROM HIGH FIELD CONDUCTIVITY p. C4-935 A. Feltz, H. Kahnt et F. Schirrmeister DOI: https://doi.org/10.1051/jphyscol:19814204 PDF (137.3 KB)
ISOTHERMAL RELAXATION CURRENTS IN ARSENIC CHALCOGENIDES p. C4-939 G.J. Adriaenssens, H. Michiel et H. Hammam DOI: https://doi.org/10.1051/jphyscol:19814205 PDF (580.3 KB)
AMORPHOUS SEMICONDUCTING Ag-Te FILMS p. C4-943 J.J. Hauser DOI: https://doi.org/10.1051/jphyscol:19814206 PDF (152.2 KB)
CRYSTALLIZATION OF AMORPHOUS Se FILMS p. C4-947 G. Fleury, C. Viger, C. Vautier et C. Lhermitte DOI: https://doi.org/10.1051/jphyscol:19814207 PDF (120.1 KB)
RADIAL DISTRIBUTION FUNCTION STUDIES OF GLASSY GERMANIUM-SILVER-CHALCOGEN ALLOYS p. C4-951 L.C. Bourne, S.C. Rowland et A. Bienenstock DOI: https://doi.org/10.1051/jphyscol:19814208 PDF (156.8 KB)
ULTRASONIC STUDIES OF THE POLYMER STRUCTURE OF THE CHALCOGENIDE GLASSES p. C4-955 V.A. Ratobylskaja et L.A. Simonova DOI: https://doi.org/10.1051/jphyscol:19814209 PDF (130.3 KB)
CONTACT EFFECTS OF METALS ON CHALCOGENIDE AMORPHOUS FILMS p. C4-959 S. Okano, M. Suzuki et H. Suzuki DOI: https://doi.org/10.1051/jphyscol:19814210 PDF (152.7 KB)
EFFECT OF COMPOSITION AND STRUCTURE ON TRANSPORT PROPERTIES OF CHALCOGENIDE GLASSES p. C4-963 A.M. Andriesh, V.S. Gerasimenko, Yu.N. Ivaschenko, M.A. Iovu, M.S. Iovu, A.V. Mironos, V.L. Smirnov, M.R. Chernii et S.D. Shutov DOI: https://doi.org/10.1051/jphyscol:19814211 PDF (164.7 KB)
ARSENIC SULPHIDE AS EVAPORATED DRY PHOTORESIST p. C4-967 A. Buroff DOI: https://doi.org/10.1051/jphyscol:19814212 PDF (93.44 KB)
A NEW CHALCOGENIDE PHOTOCONDUCTOR FOR A DIODE LASER BEAM PRINTER p. C4-971 Y. Taniguchi, H. Yamamoto, S. Horigome, S. Saito et E. Maruyam DOI: https://doi.org/10.1051/jphyscol:19814213 PDF (150.2 KB)
DIFFUSION KINETICS IN GOLD-AMORPHOUS GeTe4 THIN FILMS p. C4-975 J.M. Mackowski, M. Bendali, P. Normandon et P. Kumurdjian DOI: https://doi.org/10.1051/jphyscol:19814214 PDF (860.9 KB)
AMORPHOUS TRANSITION METAL OXIDES p. C4-981 J. Livage DOI: https://doi.org/10.1051/jphyscol:19814215 PDF (1.301 MB)
VANADATE SEMICONDUCTING GLASSES DOPED WITH OXIDES OF OTHER TRANSITION METALS p. C4-993 L.D. Bogomolova, V.A. Jachkin, M.P. Glassova et S.N. Spasibkina DOI: https://doi.org/10.1051/jphyscol:19814216 PDF (162.7 KB)
AMORPHOUS VANADIUM OXIDES BY CVD : PREPARATION, ELECTRICAL AND MAGNETIC PROPERTIES p. C4-997 T. Szörényi, K. Bali et I. Hevesi DOI: https://doi.org/10.1051/jphyscol:19814217 PDF (147.1 KB)
ELECTRON SPIN-LATTICE RELAXATION : A TOOL FOR THE INVESTIGATION OF PARAMAGNETIC CENTERS IN AMORPHOUS SEMI-CONDUCTORS p. C4-1001 A. Deville, B. Gaillard, C. Blanchard et J. Livage DOI: https://doi.org/10.1051/jphyscol:19814218 PDF (125.9 KB)
THE ELECTRONIC AND OPTICAL PROPERTIES OF VANADIUM TELLURITE GLASSES p. C4-1005 B.W. Flynn et A.E. Owen DOI: https://doi.org/10.1051/jphyscol:19814219 PDF (161.6 KB)
ELECTRICAL AND OPTICAL PROPERTIES OF AMORPHOUS TIN OXIDE p. C4-1009 I. Chambouleyron, C. Constantino, D. Jousse, R. Assumpção et R. Brenzikofer. DOI: https://doi.org/10.1051/jphyscol:19814220 PDF (151.4 KB)
CORRELATION BETWEEN CONDUCTIVITY, ELECTRON SPIN RESONANCE AND OPTICAL ABSORPTION IN RF SPUTTERED SiO2 FILMS p. C4-1013 M. Meaudre, R. Meaudre, J. Tardy et B. Tribollet DOI: https://doi.org/10.1051/jphyscol:19814221 PDF (175.6 KB)
THERMOELASTIC EFFECTS IN VITREOUS SILICA p. C4-1017 O.B. Wright et W.A. Phillips DOI: https://doi.org/10.1051/jphyscol:19814222 PDF (166.8 KB)
ELECTRONIC STRUCTURE OF AMORPHOUS SiOx p. C4-1021 E. Martínez et F. Ynduráin DOI: https://doi.org/10.1051/jphyscol:19814223 PDF (792.2 KB)
THE BAND GAP OF GLOW-DISCHARGE-PRODUCED AMORPHOUS SiOx p. C4-1025 R. Carius, R. Fischer et E. Holzenkämpfer DOI: https://doi.org/10.1051/jphyscol:19814224 PDF (157.3 KB)
LUMINESCENCE IN PLASMA DEPOSITED AMORPHOUS SixC1-x ALLOYS p. C4-1029 R.S. Sussmann et E.H. Lauder DOI: https://doi.org/10.1051/jphyscol:19814225 PDF (186.3 KB)
THE OPTICAL AND STRUCTURAL PROPERTIES OF CVD GERMANIUM CARBIDE p. C4-1033 D.C. Booth et K.J. Voss DOI: https://doi.org/10.1051/jphyscol:19814226 PDF (175.7 KB)
PHOTOCONDUCTIVITY IN a-Si : H AND a-SixC1-x : H, CORRELATION WITH PHOTOLUMINESCENCE RESULTS p. C4-1037 D. Caffier, M. Le Contellec et J. Richard DOI: https://doi.org/10.1051/jphyscol:19814227 PDF (144.9 KB)
STRUCTURAL MODELLING OF THE LIQUID STATE OF TETRAHEDRALLY BONDED SEMICONDUCTORS p. C4-1043 M. Popescu DOI: https://doi.org/10.1051/jphyscol:19814228 PDF (1.373 MB)
PHOTOCONDUCTIVITY IN LIQUID SELENIUM p. C4-1047 J. Rabit et J.C. Perron DOI: https://doi.org/10.1051/jphyscol:19814229 PDF (148.5 KB)
ELECTRONIC BEHAVIOR OF LIQUID SEMICONDUCTING ALLOYS My (Se.5Te.5)1-y WITH MONOVALENT DOPING ELEMENTS p. C4-1051 H. Radscheit, R. Fischer et M. Cutler DOI: https://doi.org/10.1051/jphyscol:19814230 PDF (150.3 KB)
NUCLEAR QUADRUPOLAR RELAXATION IN LIQUID Ga-Te ALLOYS p. C4-1055 R. Brinkmann, M. Elwenspoek, M. von Hartrott, A. Novak et D. Quitmann DOI: https://doi.org/10.1051/jphyscol:19814231 PDF (122.8 KB)
CONDUCTIVITY RELAXATION IN STRUCTURE Pt-LIQUID V2O5-Pt p. C4-1059 A. Aleksiejünas, R. Bareikiené, V. Bondarenko et S. Gečiauskas DOI: https://doi.org/10.1051/jphyscol:19814232 PDF (129.3 KB)
NONMETAL TO METAL TRANSITION IN LIQUID CHALCOGENIDES p. C4-1063 H. Radscheit DOI: https://doi.org/10.1051/jphyscol:19814233 PDF (152.4 KB)
TRANSPORT PROPERTIES OF AMORPHOUS FILMS OF CADMIUM ARSENIDE p. C4-1069 L. Żdanowicz, W. Żdanowicz, Cz. Weclewicz et J.C. Portal DOI: https://doi.org/10.1051/jphyscol:19814234 PDF (167.2 KB)
ON THE RELAXATION TIME OF CERTAIN TWO-LEVEL SYSTEMS I N AMORPHOUS STRUCTURES p. C4-1073 L. Ferrari et G. Russo DOI: https://doi.org/10.1051/jphyscol:19814235 PDF (111.5 KB)
STRUCTURAL AND ELECTRICAL PROPERTIES OF NOBLE METAL-HYDROGENATED AMORPHOUS SILICON INTERFACES p. C4-1077 C.C. Tsai, M.J. Thompson et R.J. Nemanich DOI: https://doi.org/10.1051/jphyscol:19814236 PDF (222.0 KB)
AES AND EELS MEASUREMENTS ON THE Si-Au-Ag INTERFACE p. C4-1081 A. Cros, F. Salvan et J. Derrien DOI: https://doi.org/10.1051/jphyscol:19814237 PDF (94.35 KB)
ELECTRICAL AND OPTICAL PROPERTIES OF HYDROGENATED AMORPHOUS CARBON p. C4-1085 D.I. Jones et A.D. Stewart DOI: https://doi.org/10.1051/jphyscol:19814238 PDF (148.9 KB)
Mo - MODIFIED AMORPHOUS Ge : ELECTRICAL TRANSPORT AND STRUCTURE p. C4-1089 A. Devenyi, C. Rusu, A. Belu et R. Manaila DOI: https://doi.org/10.1051/jphyscol:19814239 PDF (201.3 KB)
PRINCIPLES AND APPLICATIONS OF AMORPHICITY, STRUCTURAL CHANGE, AND OPTICAL INFORMATION ENCODING p. C4-1095 S.R. Ovshinsky DOI: https://doi.org/10.1051/jphyscol:19814240 PDF (2.508 MB)
PHOTOLITHOGRAPHIC PROCESSES IN AMORPHOUS SEMICONDUCTORS p. C4-1105 M. Janai DOI: https://doi.org/10.1051/jphyscol:19814241 PDF (2.933 MB)
INSULATOR PHYSICS AND ENGINEERING : ELECTRICALLY-ALTERABLE READ-ONLY-MEMORY APPLICATIONS p. C4-1115 D.J. DiMaria DOI: https://doi.org/10.1051/jphyscol:19814242 PDF (573.4 KB)
a-Si : H IN ELECTROPHOTOGRAPHY AND VIDICON DEVICES p. C4-1123 I. Shimizu, S. Oda, K. Saito, H. Tomita et E. Inoue DOI: https://doi.org/10.1051/jphyscol:19814243 PDF (910.2 KB)
RECENT PROGRESS OF THE AMORPHOUS SILICON SOLAR CELLS AND THEIR TECHNOLOGY p. C4-1131 Y. Hamakawa DOI: https://doi.org/10.1051/jphyscol:19814244 PDF (647.5 KB)
SOME NEW DEVELOPMENTS IN THE FIELD OF AMORPHOUS SILICON SOLAR CELLS p. C4-1143 W.E. Spear, R.A. Gibson, D. Yang, P.G. Lecomber, G. Müller et S. Kalbitzer DOI: https://doi.org/10.1051/jphyscol:19814245 PDF (961.0 KB)
INDUSTRIALIZATION OF a-Si SOLAR CELLS p. C4-1155 Y. Kuwano et M. Ohnishi DOI: https://doi.org/10.1051/jphyscol:19814246 PDF (2.645 MB)
NOVEL PROPERTIES OF AMORPHOUS TRANSITION METAL SULFIDES p. C4-1172 R. Chianelli DOI: https://doi.org/10.1051/jphyscol:19814248 PDF (25.23 KB)
