| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-551 - C4-554 | |
| DOI | https://doi.org/10.1051/jphyscol:19814119 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-551-C4-554
DOI: 10.1051/jphyscol:19814119
1 Department of Physics, Odense University, DK-5230 Odense M, Denmark
2 IBM, T.J. Watson Research Center, Yorktown Heights, N.Y. 10598, U.S.A.
J. Phys. Colloques 42 (1981) C4-551-C4-554
DOI: 10.1051/jphyscol:19814119
RECOMBINATION OF PHOTOGENERATED CARRIERS IN DOPED HYDROGENATED AMORPHOUS SILICON
J.M. Hvam1 and M.H. Brodsky21 Department of Physics, Odense University, DK-5230 Odense M, Denmark
2 IBM, T.J. Watson Research Center, Yorktown Heights, N.Y. 10598, U.S.A.
Abstract
Bulk recombination of photogenerated carriers is studied by transient photocurrent measurements in phosphorus doped a-Si:H. With light doping, the monomolecular recombination lifetime exceeds 10 ms and only a slow bimolecular recombination from extended states is observed. For very high initial carrier densities, a fast decay is suggested to be direct recombination from shallow band tail states.