| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-737 - C4-740 | |
| DOI | https://doi.org/10.1051/jphyscol:19814161 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-737-C4-740
DOI: 10.1051/jphyscol:19814161
1 Laboratoire Central de Recherches, Thomson-C.S.F., B.P. N° 10, 91401 Orsay, France
2 Groupe de Transitions de Phases, C.N.R.S., B. P. N° 166, 38042 Grenoble, France
J. Phys. Colloques 42 (1981) C4-737-C4-740
DOI: 10.1051/jphyscol:19814161
EFFECT OF HYDROGENATION ON DOPED a-Si PREPARED BY CVD
J. Magarino1, A. Friederich1, D. Kaplan1 and A. Deneuville21 Laboratoire Central de Recherches, Thomson-C.S.F., B.P. N° 10, 91401 Orsay, France
2 Groupe de Transitions de Phases, C.N.R.S., B. P. N° 166, 38042 Grenoble, France
Abstract
The effect of post-hydrogenation of phosphorus and boron doped a-Si films deposited by CVD has been studied by electrical conductivity and ESR. It is found that, contrary to the phosphorus case, hydrogenation decreases the conductivity of strongly boron doped specimens and reduces the intensity of the doping induced ESR g = 2.013. The results are interpreted in terms of a reduction of the number of electrically active boron atoms.