| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-301 - C4-304 | |
| DOI | https://doi.org/10.1051/jphyscol:1981463 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-301-C4-304
DOI: 10.1051/jphyscol:1981463
Corporate Research, Exxon Research and Engineering Co., P.0. Box 45, Linden, NJ 07036, U.S.A.
J. Phys. Colloques 42 (1981) C4-301-C4-304
DOI: 10.1051/jphyscol:1981463
DISORDER AND THE OPTICAL ABSORPTION EDGE OF HYDROGENATED AMORPHOUS SILICON
G.D. Cody, T. Tiedje, B. Abeles, T.D. Moustakas, B. Brooks and Y. GoldsteinCorporate Research, Exxon Research and Engineering Co., P.0. Box 45, Linden, NJ 07036, U.S.A.
Abstract
We investigate the effect of thermal and structural disorder on the electronic structure of hydrogenated amorphous silicon, by measuring the shape of the optical absorption edge as a function of temperature and hydrogen content. The data is consistent with the idea that the thermal and structural disorder are additive, and suggests that disorder is the fundamental determining factor of the optical bandgap.