Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-1172 - C4-1172
DOI https://doi.org/10.1051/jphyscol:19814248
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-1172-C4-1172

DOI: 10.1051/jphyscol:19814248

NOVEL PROPERTIES OF AMORPHOUS TRANSITION METAL SULFIDES

R. Chianelli

Exxon Research & Engineering Co., Linden, NJ, U.S.A.


Abstract
Crystalline chalcogenides of transition metals of groups IV-VI B (Ti, Zr, Hf, V, Nb, Ta, Mo, W) occur with layer-like structures for the MX2stoichiometry and with chain-like structures for the MX3 stoichiometry. Recently, amorphous analogs of these compounds have been obtained by low temperature precipitation from non-aqueous solutions and/or by chemical reaction and thermal decomposition of chalcogen containing salts. The properties of these amorphous sulfides are often strikingly different from their crystalline counterparts where they exist. These novel properties make these materials potentially useful in energy related areas. In this paper we discuss the preparation, characterization, structure and properties of this class of materials /1/. We shall also discuss electrochemical studies which have indicated that amorphous MoS3 is an attractive electrode material for high energy density secondary battery systems. Experimental results of amorphous LixMoS3 (0 ≤ x ≤ 4) using X-ray RDF, EXAFS, XPS, and magnetic susceptibility measurements will be presented. Mechanism of Li intercalation into MoS3 will be discussed.