| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-671 - C4-674 | |
| DOI | https://doi.org/10.1051/jphyscol:19814148 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-671-C4-674
DOI: 10.1051/jphyscol:19814148
Department of Physical Electronics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, Japan
J. Phys. Colloques 42 (1981) C4-671-C4-674
DOI: 10.1051/jphyscol:19814148
LARGE-AREA DEPOSITION OF AMORPHOUS-SILICON
M. Matsumura and Y. UchidaDepartment of Physical Electronics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, Japan
Abstract
Experimental results on hydrogenated amorphous silicon films deposited by a new hot-cathode arc-discharge decomposition of silane are described. The film had high photo-conductivity (10-2(Ωcm)-1 at AM1 100mW/cm2) and high electron drift mobility (0.56 cm2/Vs). A proto-type system with a reaction tube of 7.5cm in diameter and 70cm long was able to deposit amorphous silicon on 6x6 substrates, each of which was 25cm2. Variation of film thickness between substrates was about ±20% and variation of the thickness in 60% of a substrate area was within ±10%.