| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-59 - C4-62 | |
| DOI | https://doi.org/10.1051/jphyscol:1981409 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-59-C4-62
DOI: 10.1051/jphyscol:1981409
1 Universität Düsseldorf, 4000 Düsseldorf, F.R.G.
2 Physikalisch Technische Bundesanstalt, 3300 Braunschewig, F.R.G.
J. Phys. Colloques 42 (1981) C4-59-C4-62
DOI: 10.1051/jphyscol:1981409
DISORDER INDUCED DENSITY OF STATES WITHIN THE BAND GAP
H. Leschke1 and B. Kramer21 Universität Düsseldorf, 4000 Düsseldorf, F.R.G.
2 Physikalisch Technische Bundesanstalt, 3300 Braunschewig, F.R.G.
Abstract
We derive exact upper and lower bounds for the configurationally averaged partition function (Laplace transform of the density of states) of a multi-band Hamiltonian containing a stochastic potential. Simple examples are discussed and some conclusions are drawn with respect to the interplay of energetical and statistical correlations between the bands in determining the density of states in the gap.