| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-811 - C4-814 | |
| DOI | https://doi.org/10.1051/jphyscol:19814178 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-811-C4-814
DOI: 10.1051/jphyscol:19814178
Fachbereich Physik, Universität Kaiserslautern, F.R.G.
J. Phys. Colloques 42 (1981) C4-811-C4-814
DOI: 10.1051/jphyscol:19814178
ANNEALING AND HYDROGENATION BEHAVIOUR OF EVAPORATED AND SPUTTERED HIGH-PURITY AMORPHOUS SILICON FILMS
N. Kniffler, W.W. Müller, J.M. Pirrung, N. Hänisch, B. Schröder and J. GeigerFachbereich Physik, Universität Kaiserslautern, F.R.G.
Abstract
Amorphous silicon films have been prepared by ultra-clean evaporation and sputter technique enclosing different amounts of hydrogen into the films. The dark conductivity of both types of films can be reduced from 10-2 (Ωcm)-1 as deposited to values smaller than 4.10-11 (Ωcm)-1 if the films contain enough hydrogen and are annealed to about 600 K. Close to the annealing minimum of the dark conductivity a maximum of photoconductivity is observed.