| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-1089 - C4-1092 | |
| DOI | https://doi.org/10.1051/jphyscol:19814239 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1089-C4-1092
DOI: 10.1051/jphyscol:19814239
Institute of Physics and Technology of Materials, Bucharest, P.O. Box MG-7, Romania
J. Phys. Colloques 42 (1981) C4-1089-C4-1092
DOI: 10.1051/jphyscol:19814239
Mo - MODIFIED AMORPHOUS Ge : ELECTRICAL TRANSPORT AND STRUCTURE
A. Devenyi, C. Rusu, A. Belu and R. ManailaInstitute of Physics and Technology of Materials, Bucharest, P.O. Box MG-7, Romania
Abstract
The electrical resistivity, elastoresistivity and structure measurements on Mo-modified amorphous Ge films MoxGe1-x (0.01≤x≤0.48) show that increasing the metal concentration gradually modifies the semiconducting character and covalent bonding, characteristic for a-Ge, towrds a more metallic bonding type.