| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-251 - C4-255 | |
| DOI | https://doi.org/10.1051/jphyscol:1981453 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-251-C4-255
DOI: 10.1051/jphyscol:1981453
Institute of Inorganic Chemistry, University of Zürich, Winterthurerstrasse 190, 8057 Zürich, Switzerland
J. Phys. Colloques 42 (1981) C4-251-C4-255
DOI: 10.1051/jphyscol:1981453
PARAMETERS CONTROLLING THE DEPOSITION OF AMORPHOUS AND MICROCRYSTALLINE SILICON IN Si/H DISCHARGE PLASMAS
S. vepYek, Z. Iqbal, H.R. Oswald, F.A. Sarott and J.J. WagnerInstitute of Inorganic Chemistry, University of Zürich, Winterthurerstrasse 190, 8057 Zürich, Switzerland
Abstract
During deposition of silicon from Si/H-low pressure discharge plasmas the decisive parameter controlling the formation of either an amorphous or crystalline phase is the departure of the system from chemical equilibrium, which in turn is related to discharge parameters. Kinetic data are presented illustrating semiquantitatively these relations. A lower limit of the crystallite lite size of ~30Å exists for stress free µc-Si films, below which the microcrystalline phase is unstable with respect to the amorphous one which has a different topology.