| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-451 - C4-454 | |
| DOI | https://doi.org/10.1051/jphyscol:1981494 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-451-C4-454
DOI: 10.1051/jphyscol:1981494
Delft University of Technology, the Netherlands
J. Phys. Colloques 42 (1981) C4-451-C4-454
DOI: 10.1051/jphyscol:1981494
DETERMINATION OF MIDGAP DENSITY OF STATES IN a-Si : H USING SPACE-CHARGE-LIMITED CURRENT MEASUREMENTS
W. den BoerDelft University of Technology, the Netherlands
Abstract
The density of states in glow discharge deposited amorphous silicon has been deduced from space-charge-limited (SCL) current measurements on samples with an n+-i-n+ sandwich configuration. The temperature and filmthickness dependence of the SCL current are found to be consistent with the theory of one-carrier steady-state SCL current flow. The resulting midgap density of states is 1016-4.1016 cm-3 eV-1 in the energy region 0.75 to 0.6 eV below the conduction band edge. This figure is lower than that usually found by the field-effect technique (~1017 cm-3 eV-1), probably due to the inclusion of interface states in field-effect measurements.