| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-733 - C4-736 | |
| DOI | https://doi.org/10.1051/jphyscol:19814160 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-733-C4-736
DOI: 10.1051/jphyscol:19814160
Groupe des Transitions de Phases, Centre National de la Recherche Scientifique, B.P. 166, 38042 Grenoble Cedex, France
J. Phys. Colloques 42 (1981) C4-733-C4-736
DOI: 10.1051/jphyscol:19814160
MULTIPHASES DESCRIPTION OF a-Si : H
A. Deneuville, J.C. Bruyère and H. HamdiGroupe des Transitions de Phases, Centre National de la Recherche Scientifique, B.P. 166, 38042 Grenoble Cedex, France
Abstract
Photoluminescence, thermally stimulated currents (TSC), optical absorption and electrical conductivity are reported versus deposition temperature and deposition rate of undoped a-Si : H. These results are coherent with a tentative model according to which the radiative recombination and thermal emission take place in a nearly constant and weakly disordered grain like zone, while optical absorption occurs mainly in a widely varying and largely disordered grain boundary like zone ; in this picture, the electrical conductivity involves both zones.