| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-1037 - C4-1040 | |
| DOI | https://doi.org/10.1051/jphyscol:19814227 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1037-C4-1040
DOI: 10.1051/jphyscol:19814227
CNET, Centre Lannion B, ROC/TIC, 22301 Lannion, France
J. Phys. Colloques 42 (1981) C4-1037-C4-1040
DOI: 10.1051/jphyscol:19814227
PHOTOCONDUCTIVITY IN a-Si : H AND a-SixC1-x : H, CORRELATION WITH PHOTOLUMINESCENCE RESULTS
D. Caffier, M. Le Contellec and J. RichardCNET, Centre Lannion B, ROC/TIC, 22301 Lannion, France
Abstract
Photoconductivity and photoluminescence of a-Si : H and
a-SixC1-x : H films prepared by glow discharge or R.F sputtering have been studied. For a-Si : H sputtered films, the photoconductivity is greatly increased with R.F power, substrate temperature and can be compared to values obtained for glow discharge films. The addition of a low carbon content (< 10 %) does not affect the photoconductivity but a higher content greatly decreases it. In conclusion, we deduced that the existence of a high 1.2 eV photoluminescence peak is a necessary condition to obtain a good photoconductivity.