CURRENT PATH IN AMORPHOUS-SILICON FIELD EFFECT TRANSISTORS

M. Matsumura; S.I. Kuno; Y. Uchida

doi:doi:10.1051/jphyscol:19814111

Numéro		J. Phys. Colloques Volume 42, Numéro C4, Octobre 1981 Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors


Page(s)		C4-519 - C4-522
DOI		https://doi.org/10.1051/jphyscol:19814111

Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-519-C4-522
DOI: 10.1051/jphyscol:19814111

CURRENT PATH IN AMORPHOUS-SILICON FIELD EFFECT TRANSISTORS

M. Matsumura, S.I. Kuno and Y. Uchida

Department of Physical Electronics, Tokyo Institute of Technology, Oh-okayama, Meguro-ku, Tokyo 152, Japan

Abstract
On-resistance of amorphous-silicon field effect transistors with staggered electrodes was investigated. It was found that dependences of the on-resistance on geometrical parameters were classified into two groups. The origin was attributed to the residual resistance between the n⁺ electrode and the channel which was formed at the silicon-silicon dioxide interface. The resistance was analyzed by taking space charge effect into account, and we found that it changes in accordance with sample preparation conditions. It is pointed out that caution should be taken not only in transistor design but also in mobility evaluation and gap-state-density evaluation.