| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-923 - C4-926 | |
| DOI | https://doi.org/10.1051/jphyscol:19814201 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-923-C4-926
DOI: 10.1051/jphyscol:19814201
Laboratorium voor Vaste Stof-en Hoge Drukfysika, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, B-3030 Leuven, Belgium
J. Phys. Colloques 42 (1981) C4-923-C4-926
DOI: 10.1051/jphyscol:19814201
FARADAY ROTATION IN a-As2Se3
B. Vanhuyse, P. Van den Keybus and W. GrevendonkLaboratorium voor Vaste Stof-en Hoge Drukfysika, Katholieke Universiteit Leuven, Celestijnenlaan 200 D, B-3030 Leuven, Belgium
Abstract
Measurements of Faraday Rotation (FR) in amorphous As2Se3, as a function of photon energy are reported. In the bulk material the temperature dependence of the FR and the derived energy gap EFRg is investigated in the range 3-300 K. For EFRg a temperature coefficient of 2.4 x 10-4 eV/K is found. In amorphous films the FR could be measured through the energy range where the sign of the FR-angle is reversed. The photon energy corresponding to zero FR is in agreement with the gap value calculated from the measurements in bulk material, taking into account the expected differences between bulk and film.