| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-651 - C4-654 | |
| DOI | https://doi.org/10.1051/jphyscol:19814143 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-651-C4-654
DOI: 10.1051/jphyscol:19814143
1 Department of Chemistry, Heriot-Watt University, Riccarton, Currie, Edinburgh EH14 4AS, U.K.
2 Department of Physics, Heriot-Watt University, Riccarton, Currie, Edinburgh EH14 4AS, U.K.
J. Phys. Colloques 42 (1981) C4-651-C4-654
DOI: 10.1051/jphyscol:19814143
PREPARATION AND PROPERTIES OF POLYSILANES : MODEL COMPOUNDS FOR HYDROGENATED a-Si
P. John1, I.M. Odeh1, M.J.K. Thomas1 and J.I.B. Wilson21 Department of Chemistry, Heriot-Watt University, Riccarton, Currie, Edinburgh EH14 4AS, U.K.
2 Department of Physics, Heriot-Watt University, Riccarton, Currie, Edinburgh EH14 4AS, U.K.
Abstract
The infrared and electronic spectra of hydrogenated polysilanes, of approximate composition -(SiH2)n- and -(SiH)n- have been compared to hydrogenated a-Si. An investigation of the oxidative stability of films of these materials by infrared spectroscopy has been used to interpret 'ageing' phenomena exhibited by certain glow-discharge a-Si films prepared at high r.f. powers (> 100W).