| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-339 - C4-342 | |
| DOI | https://doi.org/10.1051/jphyscol:1981472 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-339-C4-342
DOI: 10.1051/jphyscol:1981472
Groupe des Transitions de Phases, C.N.R.S., B.P. 166, 38042 Grenoble Cedex, France
J. Phys. Colloques 42 (1981) C4-339-C4-342
DOI: 10.1051/jphyscol:1981472
PHOTOLUMINESCENCE VERSUS BORON DOPING AND PREPARATION CONDITIONS
J.C. Bruyère and A. DeneuvilleGroupe des Transitions de Phases, C.N.R.S., B.P. 166, 38042 Grenoble Cedex, France
Abstract
The variations of the intensities of the various components of the photoluminescence spectrum of undoped and boron doped a-Si:H are reported versus preparation parameters. They are discussed in the framework of two phases (grain like and grain boundary like) of hydrogenated amorphous silicon. We conclude that the grain like zone is weakly modified by the deposition rate or substrate temperature in undoped a-Si:H while it is strongly changed by boron doping and that the grain boundary like zone is very sensitive to any preparation parameters.