| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-387 - C4-390 | |
| DOI | https://doi.org/10.1051/jphyscol:1981483 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-387-C4-390
DOI: 10.1051/jphyscol:1981483
Dept. of Physical Chemistry, University of Cambridge, Lensfield Road, Cambridge, U.K.
J. Phys. Colloques 42 (1981) C4-387-C4-390
DOI: 10.1051/jphyscol:1981483
PHOTO-INDUCED E.S.R. IN GLASSY SULPHUR
S.R. ElliottDept. of Physical Chemistry, University of Cambridge, Lensfield Road, Cambridge, U.K.
Abstract
Photo-induced E.S.R. has been observed for the first time in glassy sulphur. Illumination at 77K by light of energy 3.1 eV (corresponding to α≈103cm-1 for crystalline orthorhombic sulphur) produces an E.S.R. signal which contains resolved structure characteristic of a completely anisotropic g tensor ; this is the first observation of structure in the E.S.R. spectrum of a chalcogen centre in chalcogenide glasses. Molecular orbital calculations on models for possible centres indicate that a simple dangling bond (C01) is more likely to be responsible for the observed line-shape than a hole trapped in a valence band lone-pair orbital. However, power-dependence studies indicate that more than one centre may be present.