| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-631 - C4-634 | |
| DOI | https://doi.org/10.1051/jphyscol:19814138 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-631-C4-634
DOI: 10.1051/jphyscol:19814138
1 MATSUSHITA ELECTRIC INDUSTRIAL Co. Ltd., Moriguchi, Osaka.
2 KANEGAFUCHI CHEMICAL Co. Ltd., Kobe, Hyogo.
3 Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
J. Phys. Colloques 42 (1981) C4-631-C4-634
DOI: 10.1051/jphyscol:19814138
EFFECTS OF THE SUBSTRATE POTENTIAL ON THE INCORPORATION MANNER OF HYDROGEN AND IMPURITY IN a-Si : H FILMS
S. Hotta1, Y. Tawada2, H. Okamoto3 and Y. Hamakawa31 MATSUSHITA ELECTRIC INDUSTRIAL Co. Ltd., Moriguchi, Osaka.
2 KANEGAFUCHI CHEMICAL Co. Ltd., Kobe, Hyogo.
3 Faculty of Engineering Science, Osaka University, Toyonaka, Osaka 560, Japan
Abstract
Effects of the bias voltage applied to the substrate on the film properties of a-Si : H have been investigated by employing the cross field plasma deposition method. A clear and continuous interchange in the infrared absorption peaks from 2090 cm-1 to 2000 cm-1 has been observed by changing polarity and magnitude of the bias voltage. Moreover, drastical change in the impurity doping efficiency and optimum bias voltage related with rf power have been found. By means of the optical emission spectroscopy (OES), it was confirmed that the substrate potential is as much effective in determining the film properties as the kind of decomposed species in the positive column.