| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-583 - C4-586 | |
| DOI | https://doi.org/10.1051/jphyscol:19814127 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-583-C4-586
DOI: 10.1051/jphyscol:19814127
Department of Electrical Engineering, Faculty of Engineering, Osaka University, Yamada-Kami, Suita, Osaka, 565, Japan
J. Phys. Colloques 42 (1981) C4-583-C4-586
DOI: 10.1051/jphyscol:19814127
NON-DISPERSIVE AND DISPERSIVE TRANSPORT IN AMORPHOUS GERMANIUM SELENIDE AND HYDROGENATED SILICON
J. Shirafuji, G.I. Kim, H. Matsui, M. Inoue, K. Yoshino and Y. InuishiDepartment of Electrical Engineering, Faculty of Engineering, Osaka University, Yamada-Kami, Suita, Osaka, 565, Japan
Abstract
The coexistence of non-dispersive (fast) and dispersive (slow) electron transport is observed in Ge-Se evaporated films in time-of-flight measurement. The saturation of the induced charge with increasing electric field in the non-dispersive component allows us to estimate the recombination lifetime of the optically injected electrons. In hydrogenated a-Si, on the other hand, the coexistence of two transport processes is not found so far. Electron transport in GD a-Si is non-dispersive, but highly dispersive in SP a-Si. Holes show dispersive process in both GD and SP a-Si.