| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-335 - C4-338 | |
| DOI | https://doi.org/10.1051/jphyscol:1981471 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-335-C4-338
DOI: 10.1051/jphyscol:1981471
1 Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo 106, Japan
2 Faculty of Engineering, Gifu University, Kakamihara, Gifu 504, Japan
J. Phys. Colloques 42 (1981) C4-335-C4-338
DOI: 10.1051/jphyscol:1981471
DEFECT CREATION BY OPTICAL EXCITATION IN HYDROGENATED AMORPHOUS SILICON : TIME-RESOLVED LUMINESCENCE AND ODMR MEASUREMENTS
K. Morigaki1, I. Hirabayashi1, Y. Sano1 and S. Nitta21 Institute for Solid State Physics, University of Tokyo, Roppongi, Tokyo 106, Japan
2 Faculty of Engineering, Gifu University, Kakamihara, Gifu 504, Japan
Abstract
We present evidence for defect creation by prolonged laser light irradiation at low temperatures in a-Si:H from the time-resolved luminescence and optically detected magnetic resonance measurements.