| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-343 - C4-346 | |
| DOI | https://doi.org/10.1051/jphyscol:1981473 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-343-C4-346
DOI: 10.1051/jphyscol:1981473
1 Department of Physics, M.I.T., Cambridge, MA 02139 ;
2 Department of Physics, The University of Tokyo, Tokyo, Japan.
3 Bell Laboratories, Holmdel, NJ 07733, U.S.A.
J. Phys. Colloques 42 (1981) C4-343-C4-346
DOI: 10.1051/jphyscol:1981473
RADIATIVE RECOMBINATION OF LOCALIZED EXCITONS IN AMORPHOUS AND CRYSTALLINE As2S3
K. Murayama1, 2, 3 and M.A. Bösch31 Department of Physics, M.I.T., Cambridge, MA 02139 ;
2 Department of Physics, The University of Tokyo, Tokyo, Japan.
3 Bell Laboratories, Holmdel, NJ 07733, U.S.A.
Abstract
Two photo-luminescence bands characterized by their excitation in c-As2S3 shows a surprising similarity to those in a-As2S3. In addition, a band in c-As2S3 can be interpreted as due to the recombination of localized excitons as well as a luminescence band in a-As2S3. The luminescence bands in a-As2S3 are discussed on the basis of the luminescence processes in c-As2S3.