| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-447 - C4-450 | |
| DOI | https://doi.org/10.1051/jphyscol:1981493 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-447-C4-450
DOI: 10.1051/jphyscol:1981493
Department of Electrical Engineering, Hiroshima University, Hiroshima 730, Japan
J. Phys. Colloques 42 (1981) C4-447-C4-450
DOI: 10.1051/jphyscol:1981493
OBSERVATION OF ACOUSTIC EMISSION FROM a-Si : H PIN JUNCTIONS
Y. Mishima, M. Hirose, I. Suemune, M. Yamanishi and Y. OsakaDepartment of Electrical Engineering, Hiroshima University, Hiroshima 730, Japan
Abstract
We have observed, for the first time, acoustic signal originating from the nonradiative recombination of photocarriers generated by Ar+ ion laser in biased a-Si : H pin diodes. The photoacoustic signal increases with laser power as well as with forward bias. It is found that the ratio of the photoacoustic signal at a given forward bias to the signal at zero bias increases with a decrease of gap state density in the i layer of the diode and exhibits correlation with the n-factor.