| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-795 - C4-798 | |
| DOI | https://doi.org/10.1051/jphyscol:19814174 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-795-C4-798
DOI: 10.1051/jphyscol:19814174
1 Laboratoire de Physique Nucléaire, Université de Montréal, C.P. 6128, Succ. "A", Montréal H3C 3J7, Canada
2 Département de Génie Physique, Ecole Polytechnique, C.P. 6079, Succ "A", Montréal H3C 3A7, Canada
J. Phys. Colloques 42 (1981) C4-795-C4-798
DOI: 10.1051/jphyscol:19814174
NUCLEAR SCATTERING MEASUREMENTS OF COMPOSITION PROFILES IN a-Si : H MULTILAYER STRUCTURES
C. Brassard1, R. Groleau1, J. L'Ecuyer1, J.P. Martin1, J.F. Currie2, P. Depelsenaire2, M. Wertheimer2 and A. Yelon21 Laboratoire de Physique Nucléaire, Université de Montréal, C.P. 6128, Succ. "A", Montréal H3C 3J7, Canada
2 Département de Génie Physique, Ecole Polytechnique, C.P. 6079, Succ "A", Montréal H3C 3A7, Canada
Abstract
We report on some recent results obtained on the analysis of compositional profiles in amorphous hydrogenated silicon structures using a nondestructive nuclear elastic recoil technique (ERD) to profile light elements to a depth of about 1 µm and Rutherford backscattering. We have applied these techniques to the study of the parameters which influence film composition. These include light element contamination, an effect of total thickness on the composition profiles and posthydrogenation. Secondly we have observed the phenomena of interpenetration of elements in multilayer structures. These include dopants in p-i-n junctions and electrode metals. Finally we report modification of concentration profiles by laser annealing.