| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|
|---|---|---|
| Page(s) | C4-1143 - C4-1153 | |
| DOI | https://doi.org/10.1051/jphyscol:19814245 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1143-C4-1153
DOI: 10.1051/jphyscol:19814245
1 University of Dundee, U.K.
2 Dept. of Radio-Electronics, University of Peking, Peking, China
3 Max-Planck Institut für Kernphysik, Heidelberg, F.R.G.
J. Phys. Colloques 42 (1981) C4-1143-C4-1153
DOI: 10.1051/jphyscol:19814245
SOME NEW DEVELOPMENTS IN THE FIELD OF AMORPHOUS SILICON SOLAR CELLS
W.E. Spear1, R.A. Gibson1, D. Yang2, P.G. Lecomber1, G. Müller3 and S. Kalbitzer31 University of Dundee, U.K.
2 Dept. of Radio-Electronics, University of Peking, Peking, China
3 Max-Planck Institut für Kernphysik, Heidelberg, F.R.G.
Abstract
The paper deals with the results from two current projects. In the first, concerned with materials assessment, simple transient techniques have been applied to p-i-n photovoltaic cells. The measurements give information on the internal field and on the transport and the lifetime of generated holes. The second part of the paper deals with the results of implantation experiments in which the upper part of the junction is formed by P-or Alkali-ion implantation.