| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-725 - C4-727 | |
| DOI | https://doi.org/10.1051/jphyscol:19814158 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-725-C4-727
DOI: 10.1051/jphyscol:19814158
Naval Research Laboratory, Washington, D.C. 20375, U.S.A.
J. Phys. Colloques 42 (1981) C4-725-C4-727
DOI: 10.1051/jphyscol:19814158
HIGH TEMPERATURE 1H NMR IN a-Si : H
W.E. Carlos and P.C. TaylorNaval Research Laboratory, Washington, D.C. 20375, U.S.A.
Abstract
Pulsed NMR measurements of 1H have been employed to study the chemical bonding and diffusion of hydrogen atoms in hydrogenated amorphous silicon (a-Si : H) films at elevated temperatures (20-530°C). The spin-lattice relaxation time T1 is observed to go through a sharp drop above ~400°C. The previously observed low temperature T1 minimum near 30K is essentially unaffected by annealing at temperatures up to ~500°C where over 50% of the hydrogen has evolved.