| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-423 - C4-432 | |
| DOI | https://doi.org/10.1051/jphyscol:1981490 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-423-C4-432
DOI: 10.1051/jphyscol:1981490
Carnegie Laboratory of Physics, the University, Dundee, DDl 4HN, Scotland, U.K.
J. Phys. Colloques 42 (1981) C4-423-C4-432
DOI: 10.1051/jphyscol:1981490
APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS
P.G. Le Comber, A.J. Snell, K.D. Mackenzie and W.E. SpearCarnegie Laboratory of Physics, the University, Dundee, DDl 4HN, Scotland, U.K.
Abstract
This paper reviews the development and applications of a-Si insulated gate field effect transistors which have become a subject of much current interest. The physical principles underlying the operation of the devices, their fabrication and their static and dynamic characteristics are discussed in the first part of the paper. Recent work on the application of these devices in addressable liquid crystal display panels, in basic integrated logic circuits and in addressable image sensing arrays is then reviewed in some detail.